VC06AG18120YAT
Abstract: AVX 0603 CHIP RESISTOR VC06AG18120
Text: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the
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300pS
700pS
VC06AG18120YAT
AVX 0603 CHIP RESISTOR
VC06AG18120
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Untitled
Abstract: No abstract text available
Text: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the
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700pS
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Passive filters used in wireless lans
Abstract: AVX 0402 transistor LN 1B
Text: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the
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700pS
Passive filters used in wireless lans
AVX 0402
transistor LN 1B
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VC06AG18120YAT
Abstract: variable resistor varistor documentation ceramic capacitor footprint 0402 dimensions footprint ceramic capacitor footprint 0402
Text: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the
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VC06AG18120
Abstract: 0603 3pf capacitor VC06AG18120YAT ceramic capacitor footprint 0402 dimensions Capacitor ceramic 0402 0.2 pf variable resistor varistor documentation Passive filters used in wireless lans 1B SOT23 VC06AG183R0YAT transistor LN 1B
Text: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the
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700pS
VC06AG18120
0603 3pf capacitor
VC06AG18120YAT
ceramic capacitor footprint 0402 dimensions
Capacitor ceramic 0402 0.2 pf
variable resistor varistor documentation
Passive filters used in wireless lans
1B SOT23
VC06AG183R0YAT
transistor LN 1B
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Untitled
Abstract: No abstract text available
Text: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the
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700pS
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Untitled
Abstract: No abstract text available
Text: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the
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P1-35 equivalent
Abstract: ceramic capacitor footprint 0402 dimensions AVX VC06AG183R0YA1 variable resistor varistor documentation RS-296 VC04AG183R0YA1 VC06AG18120YA1 VC06AG183R0YA1 ceramic capacitor footprint 0402 dimension VC06AG183R0
Text: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the combination of increased signal “gain” demands, coupled
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BTS555
Abstract: 650P Q67060-S6953A3
Text: PROFET Preliminary Data Sheet BTS555 Smart Highside High Current Power Switch Features Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current ISO Short circuit current limitation Current sense ratio • Overload protection
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BTS555
systems25)
1998-Dec-21
BTS555
650P
Q67060-S6953A3
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M-0301
Abstract: TRANSISTOR PNPNPN APPLICATIONS cs5431 simple SL 100 NPN Transistor CS5231-3 MGSF1P02ELT1 NTP10 "network interface cards"
Text: 500mA, 3.3V Linear Regulator w ith Auxiliary Control D escription The CS5231-3 com bines a threeterm inal linear regu lato r w ith cir cuitry to control an external PFET transistor w ith the in ten t of m anag ing tw o in p u t supplies. A 5V sup p ly pow ers th e regu lato r w hile an
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500mA,
CS5231-3
500mA
CS5231-3DP5
CS5231-3DPR5
M-0301
TRANSISTOR PNPNPN APPLICATIONS
cs5431
simple SL 100 NPN Transistor
MGSF1P02ELT1
NTP10
"network interface cards"
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK563-100A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface
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BUK563-100A
SQT404
BUK563-100A
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TC9192
Abstract: pll motor control fg fv
Text: TC9192P/F DOUBLE PLL FOR MOTOR CONTROL This is a LSI designed for motor-controlling the copying machine of which motor-rotation speed is necessary to be varied freely. With built-in PLL and VCO for reference signal generation, reference frequency can voluntarily be varied externally.
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TC9192P/F
TC9192P/T
TC9192
pll motor control fg fv
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96b1
Abstract: No abstract text available
Text: run JL PRELIMINARY » . 9 .1 2 Step-down DC/DC Converter with Voltage Detector R 1 2 2 1 N S e r ie s • OUTLINE The R1221N Series are PWM step-down DC/DC Converter controllers embedded with a voltage detector, with low supply current by CMOS process. Each step-down DC/DC converter in these ICs consists of an oscillator, a PWM control circuit, a reference
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R1221N
R1221N33AA
96b1
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Untitled
Abstract: No abstract text available
Text: y i/ iy j x iy i/ i D ual-O utput, S w itch -M o d e R eg u lato r + 5 V to ± 1 2 V o r± 1 5 V _General Description _ Features The MAX742 DC-DC converter is a controller for dual-out put power supplies In the 3W to 60W range. Relying on
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MAX742
AX/42
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lx7 zener
Abstract: 8 amps 250v littlefuse LX7 transistor 12A 250v LITTLEFUSE
Text: WCOR Off-Line Front Ends Single or Three Phase Strappable Front End Specifications: typical at T = 25°C, nominal line, 75% load, unless otherwise specified AC Line Input With Range Strap Without Range Strap Line Frequency Features • 250, 500, 750 w att, 1 1 5 /2 3 0 VAC
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I-26X,
0-200W:
00-400W:
5x124
50-600W:
5x185
115/230VAC
4x124
lx7 zener
8 amps 250v littlefuse
LX7 transistor
12A 250v LITTLEFUSE
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Untitled
Abstract: No abstract text available
Text: fl Stanford Microdevices Product Description SSW-524 Stanford M icrodevices’ SSW -524 is a high performance Gallium Arsenide Field Effect Transistor M MIC switch housed in a low-cost surface-m ountable 8-pin ceram ic package. DC-8 GHz GaAs MMIC SPST Switch
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SSW-524
25dBm
28dBm
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID Litton 5bE D WÊ SS442DD □□□□SED b2T « L I T T Low-Distortion/Medium Power M icrowave GaAs FET Electron Devices D-6828 Preliminary Specifications FEATURES • O utput Power 19 dBm @ 18 GHz ■ 1dB Power Gain 7 dB @ 18 g h z
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SS442DD
D-6828
D-6828
2285C
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nichicon capacitors gq
Abstract: No abstract text available
Text: Contents Applications. 1 Block Selection G
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ir 2248 mosfet n-channel
Abstract: No abstract text available
Text: jvw\yLwv\ 19-3105; Rev 2; 8/96 Switch-Mode Regulator with + 5 V to ± 1 2 V o r ± 1 5 V D u a l O u t p u t The MAX742 DC-DC converter is a controller for dual-output power supplies in the 3W to 60W range. Relying on simple two-terminal inductors rather than transformers, the
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MAX742
AX742
100kHz
200kHz,
ir 2248 mosfet n-channel
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MTD6N10E
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD6N10E TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Oevlc« TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS on = 0.400 OHM N-Channel Enhancement-Mode Silicon Gate
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0E-05
0E-04
0E-01
MTD6N10E
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Untitled
Abstract: No abstract text available
Text: FHX13X, FHX14X _ GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @ f=12G Hz (FHX13) High Associated Gain: 13.0dB (Typ.)@ f=12G Hz Lg s 0.15|iim, Wg = 200|iim Gold G ate M etallization for High Reliability
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FHX13X,
FHX14X
FHX13)
FHX14X
2-18G
FCSI0598M200
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Untitled
Abstract: No abstract text available
Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @ f=12G Hz High Associated Gain: 10.0dB (Typ.)@ f=12G Hz Lg s 0.25|iim, W g = 280|iim Gold G ate M etallization for High Reliability DESCRIPTION The FHX35X is a High Electron M obility Transistor(H EM T) intended
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FHX35X
FHX35X
2-18G
FCSI0598M200
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Untitled
Abstract: No abstract text available
Text: FHX45X - GaAs FET & HEMT Chips FEATURES • Low Noise Figure: 0.55dB Typ. @f=12GHz • High Associated Gain: 12.0dB (Typ.)@f=12GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability
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FHX45X
12GHz
FHX45X
2-18GHz
FCSI0598M200
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Untitled
Abstract: No abstract text available
Text: FHR20X - GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High Associated Gain: 10.0dB (Typ.)@f=18GHz Lg s 0.15|iim, Wg = 100|iim Gold Gate Metallization for High Reliability
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FHR20X
18GHz
FHR20X
2-30GHz
FCSI0598M200
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