FET RF HIGH POWER Search Results

Contextual Info: < Silicon RF Power MOS FET Discrete > RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. 4.4+/-0.1 TYPE NAME High power gain

RD 15 hf mitsubishi

Abstract: TRANSISTOR 7533 A RD00HHS1-101
Contextual Info: < Silicon RF Power MOS FET Discrete > RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. 4.4+/-0.1 TYPE NAME High power gain

2SK2973

Abstract: 165082 mf 102 fet equivalent hd 9729 transistor t 2190 GR40-220 ic 7448 marking c7 sot-89 75458 88284
Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2973 SILICON MOS FET TYPE DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. FEATURES * High power gain:Gpe>13dB « VDD=9.6V,f=450MHz,Pin= 17dBm * High efficiency:55% typ.

Contextual Info: Part Number: Integra ILD1011M30 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability  Gold Metal The high power transistor part number ILD1011M30 is designed for Avionics systems operating at 1030-1090 MHz. This LDMOS FET device

Contextual Info: Part Number: Integra ILD1011M15 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability  Gold Metal The high power transistor part number ILD1011M15 is designed for Avionics systems operating at 1030-1090 MHz. This LDMOS FET device

High voltage GaAs FET

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET FA01220A GaAs FET HYBRID IC DESCRIPTION FA01220A is RF Hybrid IC designed for 1.5GHz band small size handheld radio. FEATURES • Low voltage 3.5V • High gain 20.5B • High efficiency 50% • High power 30.5dBm APPLICATION

093.216

Abstract: 2sk2974 093.941 transistor 2sk2974
Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2974 SILICON MOS FET TYPE DESCRIPTION OUTLINE DRAWING Dimensions in mm 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. INDEX MARK BOTTOM (TOP) FEATURES • High power gain:Gpe>8.4dB

Contextual Info: Part Number: Integra ILD1214M10 Preliminary TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability  Gold Metal The high power transistor part number ILD1214M10 is designed for LBand radar operating at 1200-1400 MHz. This LDMOS FET device under

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FA01317 GaAs FET HYBRID IC DESCRIPTION FA01317 is RF Hybrid IC designed for 1.5GHz band small size hand held radio. FEATURES • • • • • High efficiency High power High gain Small size Frequency range 35 % 31 (dBm)

acp 100k

Abstract: ACP-100k FA01220A
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET FA01220A GaAs FET HYBRID IC DESCRIPTION Unit:mm FA01220A is RF Hybrid IC designed for 1.5GHz band small size handheld radio. GND FEATURES • Low voltage 3.5V • High gain 20.5B • High efficiency 50% • High power 30.5dBm

fet 547

Abstract: MA644 FA01219A 90 HYBRID 70 mhz rf power acp 100k
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC DESCRIPTION Unit:mm FA01219A is RF Hybrid IC designed for 0.8GHz band small size handheld radio. GND FEATURES • Low voltage 3.5V • High gain 22.5B • High efficiency 50% • High power 30.5dBm

rd15hvf

Abstract: RF Transistor s-parameter 30W RD15HVF1 transistor d 1302
Contextual Info: < Silicon RF Power MOS FET Discrete > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically DRAWING 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power and High Gain:

rd15hvf

Contextual Info: < Silicon RF Power MOS FET Discrete > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically DRAWING 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power and High Gain:

Contextual Info: Part Number: Integra ILD0912M400HV TECHNOLOGIES, INC. Avionics TACAN RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD0912M400HV is designed for Avionics TACAN systems operating at 960-1215MHz.

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> OOlfiObT 2T2 FA01314 GaAs FET HYBRID IC DESCRIPTION FA01314 is RF Hybrid IC designed for 1 ,7GHz band small size hand held radio. FEATURES 40 % • High efficiency • High power • High gain • Small size • Frequency range

Contextual Info: MICROWAVE POWER GaAs FET TIM3742-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

tim8996-30

Abstract: 7-AA03A
Contextual Info: MICROWAVE POWER GaAs FET TIM8996-30 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0dBm at 8.9GHz to 9.6GHz „ HIGH GAIN G1dB=7.0dB at 8.9GHz to 9.6GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

Contextual Info: MICROWAVE POWER GaAs FET TIM5359-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 5.3GHz to 5.9GHz „ HIGH GAIN G1dB=10.5dB at 5.3GHz to 5.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

Contextual Info: MICROWAVE POWER GaAs FET TIM5964-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0 dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

Contextual Info: MICROWAVE POWER GaAs FET TIM5964-6UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=38.5dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

Contextual Info: MICROWAVE POWER GaAs FET TIM7785-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0 dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB=8.5dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

Contextual Info: MICROWAVE POWER GaAs FET TIM4450-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

TIM7785-4UL

Contextual Info: MICROWAVE POWER GaAs FET TIM7785-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS