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    FET GENERAL Search Results

    FET GENERAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CMG03A
    		Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 2 A , Rectifier Diode, M-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CRG09A
    		Toshiba Electronic Devices & Storage Corporation General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CRG11B
    		Toshiba Electronic Devices & Storage Corporation General-purpose diode, 400 V, 0.4 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CRG10A
    		Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 0.7 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CRG04A
    		Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 1 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation

    FET GENERAL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SLA5054

    Contextual Info: SLA5054 N-channel General purpose Absolute maximum ratings External dimensions A Unit 3 V V A A W W °C/W °C/W Vrms °C °C 6 8 10 12 14 FET-1 FET-1 FET-2 FET-2 FET-3 FET-3 2 5 7 9 11 13 1 15 Pin 4: NC Electrical characteristics Ta=25°C FET1 Symbol V(BR)DSS


    Original     		SLA5054 SLA5054 PDF

    LH0022

    Abstract: LH0042CD lh0052 LH0022CH LH0052H LH0042CH LH0022CD LH004 LH0042 H0052
    Contextual Info: LH0022/LH0022C/LH0042/LH0042C/LH0052/LH0052C National Semiconductor LH0022/LH0022C High Performance FET Op Amp LH0042/LH0042C Low Cost FET Op Amp LH0052/LH0052C Precision FET Op Amp General Description The LH0022/LH0042/LH0052 are a family of FET input op­


    OCR Scan     		022/LH0022C/LH0042/LH0042C/LH0052/LH0052C LH0022/LH0022C LH0042/LH0042C LH0052/LH0052C LH0022/LH0042/LH0052 LH0052 LH0022 LH0042 LH0042CD LH0022CH LH0052H LH0042CH LH0022CD LH004 H0052 PDF

    LH0042CD

    Abstract: LH0052CH h0042 LH0022CH LH0042CH LH0052CD electrometer LH0042 LH0052 AH0152
    Contextual Info: LH0022/LH0022C/LH0042/LH0042C/LH0052/LH0052C National Jl A Semiconductor LH0022/LH0022C High Performance FET Op Amp LH0042/LH0042C Low Cost FET Op Amp LH0052/LH0052C Precision FET Op Amp General Description The LH0022/LH0042/LH0052 are a family of FET input op­


    OCR Scan     		LH0022/LH0022C LH0042/LH0042C LH0052/LH0052C LH0022/LH0042/LH0052 LH0052 LH0022 LH0042 -15V-Â 100pF tl/k/5557-1! LH0042CD LH0052CH h0042 LH0022CH LH0042CH LH0052CD electrometer AH0152 PDF

    TC-2303

    Abstract: NEC 3377 NE76184A transistor NEC D 582 transistor NEC D 587 NE76184A-SL NE76184A-T1 NE76184A-T1A p1085
    Contextual Info: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its


    Original     		NE76184A NE76184A NE76184A-SL NE76184A-T1 NE76184A-T1A TC-2303 NEC 3377 transistor NEC D 582 transistor NEC D 587 NE76184A-SL NE76184A-T1 NE76184A-T1A p1085 PDF

    SG 2368

    Abstract: LS 2027 audio amp c 2688 nec LS 2027 amp
    Contextual Info: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION N E76184A is a N-channel GaAs MES FET housed in ce­ ramic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity. Its


    OCR Scan     		NE76184A NE76184A NE76184A-SL NE76184A-T1 NE76184A-T1A SG 2368 LS 2027 audio amp c 2688 nec LS 2027 amp PDF

    FET differential amplifier circuit

    Abstract: fet differential amplifier schematic DC bias of gaas FET
    Contextual Info: æ Agom Application Note Æ a n A M P com pany Suggested Circuit Controller for a Dual-Control FET VVA in AGC Temperature Compensationt M524 Experimental Series FET — O— Experimental (Shunt FET) - A - •Calc (Series FET) — □ — Calc (Shunt FET)


    OCR Scan     		PDF

    XP134A11A1SR

    Contextual Info: XP134A11A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A11A1SR is a P-Channel Power MOS FET with low on-state


    Original     		XP134A11A1SR XP134A11A1SR PDF

    XP133A0245SR

    Abstract: PCB405
    Contextual Info: XP133A0245SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.045Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A0245SR is a N-Channel Power MOS FET with low on-state


    Original     		XP133A0245SR XP133A0245SR PCB405 PDF

    XP134A01A9SR

    Contextual Info: XP134A01A9SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.19Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A01A9SR is a P-Channel Power MOS FET with low on-state


    Original     		XP134A01A9SR XP134A01A9SR PDF

    XP133A1145SR

    Contextual Info: XP133A1145SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.045Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A1145SR is a N-Channel Power MOS FET with low on-state


    Original     		XP133A1145SR XP133A1145SR PDF

    XP133A0175SR

    Contextual Info: XP133A0175SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.075Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A0175SR is a N-Channel Power MOS FET with low on-state


    Original     		XP133A0175SR XP133A0175SR PDF

    XP134A02A1SR

    Abstract: XP134A11A1SR XP134A1275SR XP135A1145SR
    Contextual Info: XP134A02A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A02A1SR is a P-Channel Power MOS FET with low on-state


    Original     		XP134A02A1SR XP134A02A1SR Vds10V XP134A11A1SR XP134A1275SR XP135A1145SR PDF

    pin diagram of ic tl082

    Abstract: l0828 tl0828 L082 TL082 OF IC TL082 tl082 equivalent ic TL082AC TL082BC TL082C
    Contextual Info: UTC TL082 LINEAR INTEGRATED CIRCUIT GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIER SOP-8 DESCRIPTION The UTC TL082 is a high speed J-FET input dual operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.


    Original     		TL082 TL082 Gain-of-10 100pF QW-R105-019 100KHZ pin diagram of ic tl082 l0828 tl0828 L082 OF IC TL082 tl082 equivalent ic TL082AC TL082BC TL082C PDF

    L082

    Abstract: pin diagram of ic tl082 IC TL082 l0828 TL082 tl082 equivalent ic OF IC TL082 QW-R105-019
    Contextual Info: UTC TL082 LINEAR INTEGRATED CIRCUIT GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIER SOP-8 DESCRIPTION The UTC TL082 is a high speed J-FET input dual operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.


    Original     		TL082 TL082 QW-R105-019 L082 pin diagram of ic tl082 IC TL082 l0828 tl082 equivalent ic OF IC TL082 PDF

    Low Capacitance MOS FET

    Abstract: XP133A1330SR XP133A
    Contextual Info: XP133A1330SR ◆ ◆ ◆ ◆ ◆ ◆ Power MOS FET N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.03Ω max Ultra High-Speed Switching SOP - 8 Package Two FET Devices built-in • General Description ■ ● ● ● ● Applications Notebook PCs


    Original     		XP133A1330SR XP133A1330SR Low Capacitance MOS FET XP133A PDF

    LH0062

    Abstract: LH0062CD LH0062C LH0062CH ultra Low noise FET LB-17
    Contextual Info: National Semiconductor LH0062C High Speed FET Op Amp GENERAL DESCRIPTION The LH0062jLH0062C is a precision, high-speed FET inpu t operational am plifier w ith more than an order of magnitude improvem ent in slew rate and bandw idth over conventional FET 1C op amps. In


    OCR Scan     		LH0062C LH0062/LH0062C LH0062CH LH0062CD 345MA 34505X LH0062 ultra Low noise FET LB-17 PDF

    tl082

    Abstract: TL082L TL082P tl082d TL082 PIN DIAGRAM tl082 equivalent absolute maximum ratings tl082 TL082G TL082 DATA SHEET TL-082
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TL082 LINEAR INTEGRATED CIRCUIT GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIER „ DESCRIPTION The UTC TL082 is a high speed J-FET input dual operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.


    Original     		TL082 TL082 TL082L QW-R105-019 TL082L TL082P tl082d TL082 PIN DIAGRAM tl082 equivalent absolute maximum ratings tl082 TL082G TL082 DATA SHEET TL-082 PDF

    XP134A1275SR

    Contextual Info: XP134A1275SR ◆ ◆ ◆ ◆ ◆ ◆ Power MOS FET P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.075Ω max Ultra High-Speed Switching SOP - 8 Package 2 FET Devices Built-in • General Description ■ ● ● ● ● Applications Notebook PCs


    Original     		XP134A1275SR XP134A1275SR PDF

    tl082d

    Abstract: TL082 tl082 CIRCUIT DIAGRAM
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TL082 LINEAR INTEGRATED CIRCUIT GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIER „ DESCRIPTION The UTC TL082 is a high speed J-FET input dual operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.


    Original     		TL082 TL082 TL082L QW-R105-019 tl082d tl082 CIRCUIT DIAGRAM PDF

    TL082

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TL082 LINEAR INTEGRATED CIRCUIT GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIER  DESCRIPTION The UTC TL082 is a high speed J-FET input dual operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.


    Original     		TL082 TL082 QW-R105-019 PDF

    teledyne philbrick 1020

    Abstract: 1421 op TELEDYNE PHILBRICK teledyne 1424 teledyne 1421
    Contextual Info: 1421 1424 1425 1426 •WTELECYNE PHILBRICK FET Input High Performance Monolithic Op Amps The 1421, 1424, 1425 and 1426 comprise a group of general purpose, 741 pin-compatible FET op amps with specifications approaching low drift FET modules such as the 1020. For all but the 1424, typical low


    OCR Scan     		74Jechanical teledyne philbrick 1020 1421 op TELEDYNE PHILBRICK teledyne 1424 teledyne 1421 PDF

    XP151A03A7MR

    Contextual Info: XP151A03A7MR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.17Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-23 Package • Applications ■ General Description ■ Features The XP151A03A7MR is a N-Channel Power MOS FET with low on-state


    Original     		XP151A03A7MR OT-23 XP151A03A7MR OT-23 PDF

    Low Capacitance MOS FET

    Abstract: Low Input Capacitance MOS FET fet n-channel pin configuration Pch MOS FET XP135A1145SR P Channel Ultra Low Gate Charge
    Contextual Info: XP135A1145SR Power MOS FET ◆ N-Channel/P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance : 0.045Ω max Nch 0.110Ω max (Pch) ◆ Ultra High-Speed Switching ◆ SOP - 8 Package ◆ Two FET Devices Built-in • ● ● ● ■ General Description


    Original     		XP135A1145SR XP135A1145SR Vds10V Low Capacitance MOS FET Low Input Capacitance MOS FET fet n-channel pin configuration Pch MOS FET P Channel Ultra Low Gate Charge PDF

    XP132A01A0SR

    Contextual Info: XP132A01A0SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.105Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package • Applications ■ General Description ■ Features The XP132A01A0SR is a P-Channel Power MOS FET with low on-state


    Original     		XP132A01A0SR XP132A01A0SR PDF