FET CURTICE Search Results

FET CURTICE Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJF0411JPD-00#J3		Renesas Electronics Corporation	Thermal FETs
RJF0411JPD-01#J3		Renesas Electronics Corporation	Thermal FETs
RJF0605JPV-00#Q7		Renesas Electronics Corporation	Thermal FETs
ISL95901IRZ-T		Renesas Electronics Corporation	Integrated FET Regulators
ISL6146DFRZ		Renesas Electronics Corporation	Low Voltage ORing FET Controller

FET CURTICE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Curtice Abstract: fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice Text: California Eastern Laboratories AN1023 APPLICATION NOTE Converting GaAs FET Models For Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice[2], the	Original	PDF	AN1023 sam13-106. Curtice fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice
agilent pHEMT transistor Abstract: Curtice transistor ajw agilent pHEMT transistor LNA LOW NOISE AMPLIFIER ATF-54143 AN-1222 ATF55143 ATF-55143 ATF-551M4 advanced design system Text: Agilent ATF-55143 E-pHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications Application Note 1376 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used	Original	PDF	ATF-55143 ATF-55143 5988-9555EN agilent pHEMT transistor Curtice transistor ajw agilent pHEMT transistor LNA LOW NOISE AMPLIFIER ATF-54143 AN-1222 ATF55143 ATF-551M4 advanced design system
agilent pHEMT transistor Abstract: transistor C715 ATF-531P8 AN-1222 ATF531P83 ATF-54143 BCV62C vhf fet lna GaAs pHEMT Low Noise 2x2 agilent pHEMT transistor LNA LOW NOISE AMPLIFIER Text: Agilent ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications Application Note 1371 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used	Original	PDF	ATF-531P8 ATF-531P8 5988-9545EN agilent pHEMT transistor transistor C715 AN-1222 ATF531P83 ATF-54143 BCV62C vhf fet lna GaAs pHEMT Low Noise 2x2 agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
Anaren Microwave Abstract: microwave office Curtice UGF21030 high power fet amplifier schematic fet curtice 063700 teflon s-parameter Text: Design of a High Power Doherty Amplifier Using a New Large Signal LDMOS FET Model Simon M. Wood Cree Microwave Inc. simon_wood@cree.com Abstract There have been a number of papers written recently on the use of the Doherty amplifier technique at microwave frequencies. These have been	Original	PDF
equivalent transistor C5001 Abstract: C5001 transistor c815 transistor transistor c815 ATF581433 ATF-58143 transistor C633 ATF58143 LL1005-FH2N2S TRANSISTORS BJT list Text: Agilent ATF-58143 E-pHEMT GaAs FET Low Noise Amplifier Design for 900 MHz Applications Application Note 1375 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures	Original	PDF	ATF-58143 ATF-58143 MTT-28, AN-1281: ATF-54143 AN-1222: equivalent transistor C5001 C5001 transistor c815 transistor transistor c815 ATF581433 transistor C633 ATF58143 LL1005-FH2N2S TRANSISTORS BJT list
transistor ajw Abstract: ATF55143 Curtice AN-1222 ATF-54143 ATF-55143 ATF-551M4 ATF-5X143 55143 Text: ATF-55143 E-pHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications Application Note 1376 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures and high	Original	PDF	ATF-55143 ATF-55143 AN-1281: ATF-54143 5988-9555EN transistor ajw ATF55143 Curtice AN-1222 ATF-551M4 ATF-5X143 55143
transistor C715 Abstract: ATF-531P8 ATF531 AN-1222 ATF531P83 ATF-54143 BCV62C fet curtice mesfet fet Text: ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications Application Note 1371 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures and high	Original	PDF	ATF-531P8 AN-1281: ATF-54143 5988-9545EN transistor C715 ATF531 AN-1222 ATF531P83 BCV62C fet curtice mesfet fet
TRANSISTOR C815 Abstract: equivalent transistor C5001 ATF-58143 AV02-0913EN ATF581433 surface mount transistor c633 C5001 transistor fet curtice AN-1222 LL1005-FH2N2S Text: ATF-58143 E-pHEMT GaAs FET Low Noise Amplifier Design for 900 MHz Applications Application Note 1375 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures and high linearity. Besides having a very low typical noise figure 0.6	Original	PDF	ATF-58143 900MHz ATF-58143 AN-1281: ATF54143 5989-9554EN AV02-0913EN TRANSISTOR C815 equivalent transistor C5001 ATF581433 surface mount transistor c633 C5001 transistor fet curtice AN-1222 LL1005-FH2N2S
b1415 Abstract: GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89 Text: RTC/5/01/PSINTRO EXCELICS SEMICONDUCTOR, INC. PRODUCT SELECTION GUIDE Products Excelics Semiconductor, Inc. was founded in 1995 to become a world wide leading merchant supplier of high performance R.F. and microwave semiconductor discrete devices and integrated circuits ICs	Original	PDF	RTC/5/01/PSINTRO 24-hour 200oC, 275oC b1415 GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89
ATF-531P8 Abstract: AN-1222 ATF531P83 BCV62B BCV62C RG200D fet curtice nonlinear model DEMO-ATF-5X1P8 High Dynamic Range FET sot-89 Text: Agilent ATF-531P8 900 MHz High Linearity Amplifier Application Note 1372 Introduction This application note describes the design and construction of a single stage 850 MHz to 900 MHz High Linearity Amplifier using Enhancement Mode pHEMT ATF-531P8. The amplifier has a	Original	PDF	ATF-531P8 ATF-531P8. ATF-531P8 5988-9546EN AN-1222 ATF531P83 BCV62B BCV62C RG200D fet curtice nonlinear model DEMO-ATF-5X1P8 High Dynamic Range FET sot-89
C882 TRANSISTOR Abstract: ATF-531P8 Curtice ATF531P8 ATF531P83 BCV62B BCV62C RG200D Avago Mounted Amplifiers Text: ATF-531P8 900 MHz High Linearity Amplifier Application Note 1372 Introduction This application note describes the design and construction of a single stage 850 MHz to 900 MHz High Linearity Amplifier using Enhancement Mode pHEMT ATF-531P8. The amplifier has a typical gain of 22 dB	Original	PDF	ATF-531P8 ATF-531P8. ATF-531P8 5988-9546EN C882 TRANSISTOR Curtice ATF531P8 ATF531P83 BCV62B BCV62C RG200D Avago Mounted Amplifiers
ATF-54143 application notes Abstract: ATF54143.s2p low cost hearing aid circuit diagram circuit diagram of low cost hearing aid with applications PIN attenuator ADS model lna 2.5 GHZ s parameter ads design agilent ads combiner circuit diagram of low cost hearing aid agilent pHEMT transistor LNA LOW NOISE AMPLIFIER Tower Mounted Amplifier Text: A High IIP3 Balanced Low Noise Amplifier for Cellular Base Station Applications Using the Agilent Enhancement Mode PHEMT ATF-54143 Transistor and Anaren Pico Xinger 3 dB Hybrid Couplers Application Note 1281 Introduction Most base stations BTS can transmit a signal to a mobile	Original	PDF	ATF-54143 5988-5688EN ATF-54143 application notes ATF54143.s2p low cost hearing aid circuit diagram circuit diagram of low cost hearing aid with applications PIN attenuator ADS model lna 2.5 GHZ s parameter ads design agilent ads combiner circuit diagram of low cost hearing aid agilent pHEMT transistor LNA LOW NOISE AMPLIFIER Tower Mounted Amplifier
circuit diagram of hearing aid using transistors Abstract: ATF54143.s2p low cost hearing aid circuit diagram ATF-54143 application notes stripline power combiner splitter ATF54143 circuit diagram of digital hearing aid AN1222 IMT-2000 JP503 Text: A High IIP3 Balanced Low Noise Amplifier for Cellular Base Station Applications Using Enhancement Mode PHEMT ATF-54143 Transistor and Anaren Pico Xinger 3 dB Hybrid Couplers Application Note 1281 Introduction Most base stations BTS can transmit a signal to a	Original	PDF	ATF-54143 MTT-28, ATF54143 5988-5688EN circuit diagram of hearing aid using transistors ATF54143.s2p low cost hearing aid circuit diagram ATF-54143 application notes stripline power combiner splitter circuit diagram of digital hearing aid AN1222 IMT-2000 JP503
HP RF TRANSISTOR GUIDE Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor Text: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS	Original	PDF	SG384/D HP RF TRANSISTOR GUIDE MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor

TDMA simulation ADS Abstract: ATF-50189 BTS 3900 a C7-15PF ATF0189 ATF050189 ATF-501P8 ATF-54143 GSM900 msu 305 Text: ATF-50189 High Linearity 900 MHz Amplifier Avago Technologies Enhancement Mode Psuedomorphic HEMT in SOT 89 Package Application Note 5293 Introduction Application Guidlines Avago Technologies ATF-50189 is an enhancement mode PHEMT designed for high linearity and medium	Original	PDF	ATF-50189 800MHz 900MHz 2400MHz 900MHz AV01-0365EN TDMA simulation ADS BTS 3900 a C7-15PF ATF0189 ATF050189 ATF-501P8 ATF-54143 GSM900 msu 305
JD 1803 Abstract: philips diode PH 33D Schematics bosch AL 1450 DV bosch al 1450 dv JD 1803 52B jd 1803 IC jd 1803 data sheet quartz kds 9j shockley diode application Yokogawa yf 104 Text: High-Frequenty Analog Integrated Cirtuit Design Edited by R a v en d er G oyal W ILEY SERIES IN MICROWAVE AND OPTICAL ENGINEERING K a i Chang Series Editor , INSUME OF MICROELECTRONICSUBßARY High-Frequency Analog Integrated-Circuit Design W ILEY SERIES IN MICROWAVE AN D O PTICAL	OCR Scan	PDF