FET AMPLIFIER WITH UNIT GAIN Search Results
FET AMPLIFIER WITH UNIT GAIN Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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LBAA0QB1SJ-295 | Murata Manufacturing Co Ltd | SX1262 MODULE WITH OPEN MCU |
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GRJ43QR7LV154KW01L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose |
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GRJ43DR7LV224KW01L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose |
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GRJ55DR7LV334KW01L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose |
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GRJ43QR7LV154KW01K | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose |
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FET AMPLIFIER WITH UNIT GAIN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2SC4639Contextual Info: Ordering number : ENN7177 CPH5905 NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET CPH5905 High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications unit : mm 2196 [CPH5905] 2.9 5 4 0.15 3 0.05 0.6 1.6 • Composite type with J-FET and NPN transistors |
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ENN7177 CPH5905 CPH5905] CPH5905 2SK3557-equivalent 2SC4639-equivalent 2SC4639 | |
fet junction transistor
Abstract: marking rb CPH5902 ITR10364 ITR10365 ITR10367 2SC4639
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ENN6962 CPH5902 CPH5902] CPH5902 2SK2394-equivalent 2SC4639-equivalent fet junction transistor marking rb ITR10364 ITR10365 ITR10367 2SC4639 | |
Contextual Info: TA75060P BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC J-FET INPUT LOW-POWER OPERATIONAL AMPLIFIER Unit in mm The TA75060P is a J-FET input low-power operational amplifier with low input bias, offset current, and a fast slew rate. The u uuu TA75060P is pin compatible with the TA7506P. |
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TA75060P TA75060P TA7506P. 400pA 200pA | |
ta7504pContextual Info: BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC Ifl # Ü U U II J-FET INPUT LOW-POWER OPERATIONAL AMPLIFIER Unit in mm The TA75061P is a J-FET input low-power operational amplifier with low input bias, offset current and a fast slew rate. The U CJ UITT |
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TA75061P TA7504P 400pA 200pA 10kii ta7504p | |
aloka
Abstract: CL25 TA75064F TA75064P TA75902P ta7506 tc 5064p TA75902
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5064P TA75064F TA75064P TA75902P 400pA 200pF 10kii 10kil aloka CL25 ta7506 tc 5064p TA75902 | |
RF POWER amplifier 10 watt
Abstract: 8587 sm33 WiMax Configurations 6 pin DC power connector
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SM3338-43 SM3338-43 12VDC RF POWER amplifier 10 watt 8587 sm33 WiMax Configurations 6 pin DC power connector | |
Contextual Info: BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA75072P/F Unit in J-FET INPUT LOW-NOISE OPERATIONAL AMPLIFIER 8 5 n r-i r—i n TA75072P The TA75072P and TA75072F are J-FET input low-noise operational amplifiers with low input bias and offset current, |
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TA75072P/F TA75072P TA75072P TA75072F TA75458P -100pF | |
Contextual Info: Model SM3437-43 3400-3700 MHz 20 Watt Linear Power Amplifier FOR WLL APPLICATIONS The SM3437-43 is a 3.4 to 3.7 GHz solid state GaAs FET amplifier designed for the Wireless Local Loop markets. The amplifier provides 50 dB of linear gain with a P1dB of +43 dBm. The unit provides ultra-linear |
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SM3437-43 SM3437-43 12VDC | |
SM7985-43Contextual Info: Model SM7985-43 7900-8500 MHz 20 Watt Linear Power Amplifier FOR COFDM APPLICATIONS The SM7177-43 is a 7.9 to 8.5 GHz solid state GaAs FET amplifier. The amplifier provides 58 dB of linear gain with a P1dB of +43 dBm. It is available in modular form standard , as a lab unit or in a 19” rack |
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SM7985-43 SM7177-43 -16dB 12VDC SM7985-43 | |
SM2325-47L
Abstract: SM2325 sm2324
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SM2324-47L SM2325-47L com/specs/2325-47l/2325 SM2325-47L SM2325 sm2324 | |
SM2527-50LContextual Info: Specification Sheet for SM2527-50L SSPA This solid state GaAs amplifier is designed for the Multichannel Multipoint Distribution System MMDS market. The unit uses the latest FET technology with a built in linearizer allowing ultra linear performance for rigorous system |
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SM2527-50L SM2527-50L com/specs/2527-50l/2527 | |
SM2325-50LContextual Info: Specification Sheet for SM2325-50L SSPA This solid state GaAs amplifier is designed for the ISM/WCS/WLL markets. The unit uses the latest FET technology with a built in linearizer allowing ultra linear performance for rigorous system requirements. Features include a Single DC Supply, Over/Reverse Voltage Protection, Thermal |
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SM2325-50L SM2325-50L com/specs/2325-50l/2325 | |
Contextual Info: TGA8349-SCC DC TO 14-GHz AMPLIFIER AP PR O VAL 5037 1.2:1 Input VSWR, 1.3:1 Output VSWR 11-dB Small Signal Gain 16-dBm Output Power at 1-dB Gain Compression at Midband 3.1-dB Noise Figure at Midband Size: 3,4290 x 2,2860 x 0,101 mm 0.135 x 0.090x 0.004 inch |
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TGA8349-SCC 14-GHz 11-dB 16-dBm | |
Contextual Info: WTELEDYNE COMPONENTS 1430 FAST SETTLING, FET INPUT OPERATIONAL AMPLIFIER FEATURES GENERAL DESCRIPTION • Settling Time to ±0.01% 10V step 200 ns Max ■ Operating Temperature. -55°C to +125°C ■ Gain Bandwidth Product. 100 MHz |
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50V/ns 200nsec 600ns. 200ns. 14304HR | |
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GaAsTEKContextual Info: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply |
OCR Scan |
ITT6401D ITT6401D loQ-360mA GaAsTEK | |
2w,GaAs FET
Abstract: ITT6401D
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ITT6401D ITT6401D 360mA 2w,GaAs FET | |
LEMO
Abstract: FEMTO Messtechnik DLPVA-100-F DLPVA-100-F-D DLPVA-100-F-S LEMO 3-Pin LEMO 7 pin
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DLPVA-100-F LEMO FEMTO Messtechnik DLPVA-100-F-D DLPVA-100-F-S LEMO 3-Pin LEMO 7 pin | |
Contextual Info: T R I Q U I N T S E M I C TGA8035-SCC O N D U C Gain Block Amplifier ● ● ● ● ● ● 6 to 18- GHz Frequency Range T O R , I N C . 8035 13- dB Typical Gain 2.2:1 Typical Input/Output SWR 12.5- dBm Typical Output Power at 1 -dB Gain Compression 5 - dB Typical Noise Figure |
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TGA8035-SCC TGA8035 | |
dss2
Abstract: TGA8035 TGA8035-SCC
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TGA8035-SCC TGA8035 dBm0710) dss2 TGA8035-SCC | |
LI 803-4
Abstract: TGA8035-SCC
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TGA8035-SCC 18-GHz 13-dB GMGS010A9 LI 803-4 | |
modules
Abstract: fet small signal
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MwT-0206S-A9G1/0206Z-A9G1 modules fet small signal | |
Contextual Info: TGA8041-XCC 6.5- TO 18-GHz POWER AMPLIFIER A PP R O V AL 5026 0.4-W Output Power at 1-dB Gain Compression 10.5-dB Typical Gain Operates From Single 8-V Supply 13% Typical Power-Added Efficiency at 1-dB Gain Compression Size: 3,6068 x 1,9304 x 0,1016 mm 0.142 x 0.076 x 0.004 inch |
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TGA8041-XCC 18-GHz 26-dBm TGA8041 | |
amplifier 2606
Abstract: fet 5c TGA8349 TGA8349-SCC
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TGA8349-SCC 11-dB 16-dBm TGA8349 11-dB amplifier 2606 fet 5c TGA8349-SCC | |
gmna002
Abstract: TGA8220-SCC TGA8300-SCC TGA8622-SCC
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TGA8220-SCC 18-GHz 26-dBm TGA8220-SCC 13-dB. gmna002 TGA8300-SCC TGA8622-SCC |