sd2t
Abstract: No abstract text available
Text: THERMAL FET HAF2002 Silicon N Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability HITACHI ADE-208-503 1st. Edition Features This FET has the over temperature shut-dow n capability sensing to the junction temperature. This FET has the built-in over temperature shut-dow n circuit in the gate area. And this circuit
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HAF2002
ADE-208-503
-220FM
HAF2001.
sd2t
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NEC Ga FET marking L
Abstract: NE76184B marking K gaas fet NEC Ga FET marking A nec gaas fet marking NEC Ga FET marking Rf nec 9000 NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET
Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity.
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NE76184B
NE76184B
NE76184B-T1
NE76184B-T1A
NEC Ga FET marking L
marking K gaas fet
NEC Ga FET marking A
nec gaas fet marking
NEC Ga FET marking Rf
nec 9000
NEC Ga FET marking V
NEC Ga FET "marking V"
NEC Ga FET
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AN1081S
Abstract: AN1081 1081S AN6583
Text: Panasonic Operational Amplifiers A N 1081, AN1081S, A N 6583 Single J-FET Input Operational Amplifiers • Overview The AN1081, the AN1081S and the AN6583 are single operational amplifiers with input stages consisiting of Pch J-FET adopting the ion implantation process, realizing
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1081S,
AN6583
AN1081,
AN1081S
AN6583
1012n
106dB
b13gfl5g
001E3bfl
AN1081
1081S
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low noise FET NEC U
Abstract: ym 238
Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ce ramic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.
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NE76184B
NE76184B
NE76184B-T1
NE76184B-T1A
low noise FET NEC U
ym 238
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NEC Ga FET marking Rf
Abstract: nec gaas fet marking
Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION N E76184B is a N-channel GaAs MES FET housed in ce ram ic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.
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NE76184B
NE76184B
NE76184B-T1
NE76184B-T1A
IR30-00
NEC Ga FET marking Rf
nec gaas fet marking
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 0 3 B low -rtoise GaAs FET w ith an N-channel S ch o ttky gate is designed fo r use in S to Ku band am pli fiers. The herm etically sealed m etal-ceram ic package as
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MGF1403B
MGF1403B
Ta-251S
12GHz
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Untitled
Abstract: No abstract text available
Text: b S 4 T Û 2 cî 0017054 131 • MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1423B SM ALL SIGNAL GaAs FET DESCRIPTION The M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -channel S cho ttky ga te, is designed fo r use in S to Ku band am pli fiers. FEATURES
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F1423B
12GHz
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Untitled
Abstract: No abstract text available
Text: Panasonic Operational Amplifiers AN 1082, AN 1082S, AN6581 Dual J-FET Input Operational Amplifiers • Overview AN1082 The AN1082, the AN1082S and the AN6581 are dual operational amplifiers with input stages consisting of P-ch J-FET adopting the ion implantation process, realizing
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1082S,
AN6581
AN1082
AN1082,
AN1082S
AN6581
AN1082S,
LR3E65E
DD12371
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MTV25N50E t2
Abstract: AN569 MTV25N50E SMD310
Text: MOTOROLA Order this document by MTV25N50E/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTV25N50E TMOS E-FET. Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 25 AMPERES 500 VOLTS RDS on = 0.200 OHM N–Channel Enhancement–Mode Silicon Gate
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MTV25N50E/D
MTV25N50E
MTV25N50E/D*
MTV25N50E t2
AN569
MTV25N50E
SMD310
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTV25N50E/D SEMICONDUCTOR TECHNICAL DATA Advance Information M TV25N 50E TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 25 AMPERES 500 VOLTS RDS on = 0.200 OHM N-Channel Enhancement-Mode Silicon Gate
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MTV25N50E/D
TV25N
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BUK7C06-40AITE
Abstract: ua2022
Text: BUK7C06-40AITE N-channel TrenchPLUS standard level FET Rev. 05 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing
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BUK7C06-40AITE
BUK7C06-40AITE
ua2022
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BUK7907-40ATC
Abstract: No abstract text available
Text: BUK7907-40ATC N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK7907-40ATC
BUK7907-40ATC
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C-Band Power GaAs FET
Abstract: FLC057WG
Text: FLC057WG C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general
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FLC057WG
FLC057WG
C-Band Power GaAs FET
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Untitled
Abstract: No abstract text available
Text: BUK9107-40ATC N-channel TrenchPLUS logic level FET Rev. 04 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK9107-40ATC
BUK9107-40ATC
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Untitled
Abstract: No abstract text available
Text: BUK7907-40ATC N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK7907-40ATC
BUK7907-40ATC
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Untitled
Abstract: No abstract text available
Text: BUK9907-55ATE N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK9907-55ATE
BUK9907-55ATE
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BUK9907-55ATE
Abstract: No abstract text available
Text: BUK9907-55ATE N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK9907-55ATE
BUK9907-55ATE
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Untitled
Abstract: No abstract text available
Text: BUK7105-40ATE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK7105-40ATE
BUK7105-40ATE
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BUK7C10-75AITE
Abstract: No abstract text available
Text: BUK7C10-75AITE N-channel TrenchPLUS standard level FET Rev. 03 — 17 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing
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BUK7C10-75AITE
BUK7C10-75AITE
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FLC057WG
Abstract: No abstract text available
Text: FLC057WG C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general
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FLC057WG
FLC057WG
St4888
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Untitled
Abstract: No abstract text available
Text: BUK7C08-55AITE N-channel TrenchPLUS standard level FET Rev. 02 — 17 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing
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BUK7C08-55AITE
BUK7C08-55AITE
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Untitled
Abstract: No abstract text available
Text: BUK9907-40ATC N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK9907-40ATC
BUK9907-40ATC
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BUK7C06-40AITE
Abstract: No abstract text available
Text: BUK7C06-40AITE N-channel TrenchMOS standard level FET Rev. 04 — 23 June 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using TrenchMOS technology, featuring very low on-state resistance and including
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BUK7C06-40AITE
BUK7C06-40AITE
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PDF
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Untitled
Abstract: No abstract text available
Text: BUK9107-55ATE N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK9107-55ATE
BUK9107-55ATE
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