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    FET 600V 20A Search Results

    FET 600V 20A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    FET 600V 20A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    date code, Renesas MOS FET

    Abstract: PRSS0005ZB-A
    Text: Preliminary Datasheet RJQ6020DPM 600V - 20A - MOS FET High Speed Power Switching R07DS0649EJ0100 Rev.1.00 Jan 23, 2012 Features • High speed switching • Low on-state voltage • Built in fast recovery diode in one package Outline RENESAS Package code: PRSS0005ZB-A


    Original     		PDF RJQ6020DPM R07DS0649EJ0100 PRSS0005ZB-A) date code, Renesas MOS FET PRSS0005ZB-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0639EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching


    Original     		PDF RJK60S5DPE R07DS0639EJ0100 PRSS0004AE-B

    RJK60S5

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0639EJ0200 Rev.2.00 Oct 12, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching


    Original     		PDF RJK60S5DPE R07DS0639EJ0200 PRSS0004AE-B RJK60S5

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0639EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching


    Original     		PDF RJK60S5DPE R07DS0639EJ0100 PRSS0004AE-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S5DPN 600V - 20A - MOS FET High Speed Power Switching R07DS0952EJ0100 Rev.1.00 Nov 12, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching


    Original     		PDF RJK60S5DPN R07DS0952EJ0100 PRSS0004AC-A O-220AB)

    RJK60S5

    Abstract: RJK60S5DPN-00 RJK60s5dpn
    Text: Preliminary Datasheet RJK60S5DPN 600V - 20A - MOS FET High Speed Power Switching R07DS0952EJ0200 Rev.2.00 Jan 23, 2013 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching


    Original     		PDF RJK60S5DPN R07DS0952EJ0200 PRSS0004AC-A O-220AB) RJK60S5 RJK60S5DPN-00 RJK60s5dpn

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S5DPQ-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0734EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching


    Original     		PDF RJK60S5DPQ-E0 R07DS0734EJ0100 PRSS0003ZE-A O-247)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0641EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching


    Original     		PDF RJK60S5DPP-E0 R07DS0641EJ0100 PRSS0003AG-A O-220FP)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S5DPQ-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0734EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching


    Original     		PDF RJK60S5DPQ-E0 R07DS0734EJ0100 PRSS0003ZE-A O-247)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0641EJ0200 Rev.2.00 Oct 12, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching


    Original     		PDF RJK60S5DPP-E0 R07DS0641EJ0200 PRSS0003AG-A O-220FP)

    p623f

    Abstract: 600V1200V p623
    Text: Standard H-Bridge Module fastPACK 0 H 2nd gen Features - H-bridge 600V.1200V / 20A.100A Standard- and high speed IGBT´s or MOS-FET Ultra low inductive design Vincotech - Power Flow Through for simple PCB routing Vincotech - Clip In, the reliable interconnection between PCB, module and


    Original     		PDF V23990-P62x-Fxx-U-02-14 P623-F04-PM P623-F14-PM P623-F24-PM P624-F24-PM P625-F24-PM p623f 600V1200V p623

    RJL60S5DPP-E0

    Abstract: RJL60S5 R07DS0819EJ0100
    Text: Preliminary Datasheet RJL60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0819EJ0100 Rev.1.00 Feb 04, 2013 Features • Superjunction MOSFET  Built-in fast recovery diode trr = 170 ns typ. at IF = 20 A, VGS = 0, diF/dt = 100 A/s, Ta = 25C


    Original     		PDF RJL60S5DPP-E0 R07DS0819EJ0100 PRSS0003AG-A O-220FP) RJL60S5DPP-E0 RJL60S5

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0245EJ0500 Rev.5.00 Jan 23, 2013 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching


    Original     		PDF RJK60S5DPK-M0 R07DS0245EJ0500 PRSS0004ZH-A

    RJK60s5dpp

    Abstract: rjk60s5
    Text: Preliminary Datasheet RJK60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0641EJ0300 Rev.3.00 Jan 23, 2013 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching


    Original     		PDF RJK60S5DPP-E0 R07DS0641EJ0300 PRSS0003AG-A O-220FP) RJK60s5dpp rjk60s5

    RJL60S5

    Abstract: RJL60S5DPE
    Text: Preliminary Datasheet RJL60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Features • Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)


    Original     		PDF RJL60S5DPE R07DS0817EJ0001 PRSS0004AE-B RJL60S5 RJL60S5DPE

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0245EJ0400 Rev.4.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching


    Original     		PDF RJK60S5DPK-M0 R07DS0245EJ0400 PRSS0004ZH-A

    H-Bridge

    Abstract: 600V1200V p623f
    Text: Standard H-Bridge Module fastPACK 0 H 2nd gen Features - H-bridge 600V.1200V / 20A.100A Standard- and high speed IGBT´s or MOS-FET Ultra low inductive design Vincotech - Power Flow Through for simple PCB routing Vincotech - Clip In, the reliable interconnection between PCB, module and


    Original     		PDF V23990-P62x-Fxx-U-02-14 P623-F04-PM P623-F14-PM P623-F24-PM P624-F24-PM P625-F24-PM P629-F44-U-02-14 H-Bridge 600V1200V p623f

    RJK60S5

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0245EJ0400 Rev.4.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching


    Original     		PDF RJK60S5DPK-M0 R07DS0245EJ0400 PRSS0004ZH-A RJK60S5

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0641EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching


    Original     		PDF RJK60S5DPP-E0 R07DS0641EJ0100 PRSS0003AG-A O-220FP)

    RJK60S5

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S5DPQ-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0734EJ0200 Rev.2.00 Jan 23, 2013 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching


    Original     		PDF RJK60S5DPQ-E0 R07DS0734EJ0200 PRSS0003ZE-A O-247) RJK60S5

    RJL60S5

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJL60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0818EJ0002 Rev.0.02 Jun 21, 2012 Features • Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)


    Original     		PDF RJL60S5DPK-M0 R07DS0818EJ0002 PRSS0004ZH-A RJL60S5

    Untitled

    Abstract: No abstract text available
    Text: FR0OUOT ÂTÂIO' N-CHANNEL ENHANCEMENT MOS FET 600V, 20A, 0.35G SDF20N60 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE


    OCR Scan     		PDF SDF20N60 MIL-S-19500 IF-20A

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT CATTALO' Æ u tro n N-CHANNEL ENHANCEMENT MOS FET 600V, 20A, 0.35 0 SDF20N60 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE


    OCR Scan     		PDF SDF20N60 SYM80L IF-20A

    fet 600V 20A

    Abstract: mosfet 600V 20A SDF20N60 1d20a
    Text: PRODUCT Æutron CÂTÂL ' N-CHANNEL ENHANCEMENT MOS FET 600V, 20A , 0.35H SDF20N60 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE


    OCR Scan     		PDF SDF20N60 MIL-S-19500 IF-20A 300hS. fet 600V 20A mosfet 600V 20A 1d20a