FET 5C Search Results

pa1556ah

Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
Contextual Info: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET

NE6500278

Abstract: 10NEC 2410 nec
Contextual Info: PRELIMINARY DATA SHEET_ GaAs MES FET NE6500278 2.0 W L-BAND, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500278 is a power GaAs FET which provides high gain, high efficiency and high output power in L band and S band.

motorola an569 thermal

Abstract: diode zener motorola MTM10N100E 2N3904 AN569 AN569 in Motorola Power Applications
Contextual Info: Order this data sheet by MTM10N100E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS E-FET High Energy Power FET TMOS POWER FET 10 AMPERES rDS on = 1-2 OHMS 1000 VOLTS N-Ctiannel Enhancem ent-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to with­

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V4450A 4.4-5 .OGHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V4450A is an internally impedance-matched U n it: millimeters inches) GaAs power FET especially designed for use in 4.4~5.0GHz

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK38V2732 12.7— 13.2GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FK38V 2732 is an internally impedance matched GaAs power FET especially designed fo r use in 12.7 ~ 13.2 GHz band amplifiers. The herm etically sealed metal-ceramic

sr 4416

Abstract: LF157 LF156 IC LF356 Lf356 application 25R8 LF256
Contextual Info: LF155 - LF255 - LF355 LF156 - LF256 - LF356 LF157 - LF257 - LF357 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS . . . . . . . . HIGH INPUT IMPEDANCE J-FET INPUT STAGE HIGH SPEED J-FET OP-AMPs : UP to 20MHz, 50V/µs OFFSET VOLTAGE ADJUST DOES NOT DEGRADE DRIFT OR COMMON-MODE

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0906B L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The MGFQ9Q6B, GaAs FET w ith an N-charmel schottky gate, is designed fo r use in UHF band amplifiers. Unit : m illim e te rs FEATURES • • Class A operation

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V4450 4.4—5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC 42V4450 is an internally impedance-matched GaAs power FET especially designed fo r use i n 4 . 4 ~ 5 . 0 GHz band amplifiers. The herm etically sealed metal-ceramic

transistor on 4584

Abstract: D20N06 369A-13 AN569 MTD20N06HDL h1010
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MTD20N06HDL HDTMOS E-FET High Density Power FET DPAK for Surface Mount or insertion Mount • ■ * ■ H M MM H Motorola Preferred Device B M TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS on = 0-045 OHM

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 36V 5258 5 .2 —5.8G Hz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC 36V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 ~ 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic

f2445

Abstract: j fet f2445
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> ; MGF244S | I \ | MICROWAVE POWER GaAs FET j DESCRIPTION The M G F2445, power GaAs FET w ith OUTLINE DRAWING an N-channel U n it: m ilhm eters inches schottky gate, is designed fo r use in S to Ku band am pli­

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5258 5 . 2 —5 .8 G H z BAND 8 W INTERNA LLY MATCHED GaAs FET DESCRIPTION The M G FC39V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 ~ 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 36V 3742 o r p>o<*u c t' ° " Pd '» n lS c o n t v nn u e 3 .7 ' 4.2G H z BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V3742 is an internally impedance-matched GaAs power FET especially designed for use In 3.7 ~ 4.2

RV15

Abstract: MGFK41V4045
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK41V4045 14 .0 — 14.5GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G FK 4 1 V 4 0 4 5 is an internally impedance matched GaAs power FET especially designed for use in 1 4 .0 —1 4 .5 GHz band amplifiers. The hermetically sealed metal-ceramic

4045 FET

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 30V 4045 1 4 .0 — 14.5G H z BAND IW INTERNALLY MATCHED GaAs FET DESCRIPTION O U T L IN E D R A W IN G U n it: m illim e te rs linches The MGFK30V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 ~ 14.5

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> p b ê u m w a MGFC40V7177A *? , 7.1~7.7GHi BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 17 7 A is an internally im pedance-m atched GaAs power FET especially designed fo r use in 7.1 — 7 ,7 GHz band amplifiers. The herm etically sealed metal-ceramic

Contextual Info: • bEMTÔES DQI ÔQDH 24h ■ MITSUBISHI SEMICONDUCTOR <GaAs FET> oP.\W»N^V — M G FC 44V 4450 4 . 4 ~ 5 . 0 GHz BAND 2 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 4 V 4 4 5 0 is an internally impedance-matched GaAs power FET especially designed for use i n 4 . 4 ~ 5 . 0

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1425B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 2 5 B low -noise GaAs FET w ith an N -channel O U TLIN E DRAW ING Unit: m illim eters inches 4 M ÍN . (0 .1 5 7 M IN . ) 4 M IN . ( 0 .1 5 7 M IN .) S cho ttky gate is designed fo r use in Ku band am plifiers.

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3742A '"T iiS l5, 0 0 ,r. 01'« S '*'1' W 3.7~ 4.2GH z BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 3 7 4 2 A is an in te rna lly im p e d a n ce -m a tch e d GaAs power FET especially designed fo r use in 3.7 ~ 4.2

a2240

Abstract: tt6090 2SK1663-L A2241 FUJI TTL
Contextual Info: 2SK1663-LS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET • Features ^ SERIES ^ ■ Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■ Applications • Sw itching regulators

2SK1277

Abstract: SC-65 T151
Contextual Info: 2SK1277 FUJI POWER MOS-FET N-CHANNEL ENHANCEMENT TYPE MOS-FET F-V SERIES l l :eatures lOutline Drawings Include fast recovery diode High voltage 1Low driving power ¡Applications IV otor controlers Ir verters Cioppors IMax. Ratings and Characteristics ¡Equivalent Circuit Schematic

BD9757MW

Abstract: BD9757MWV
Contextual Info: Regulators ICs for Digital Cameras and Camcorders Switching Regulator IC with Built-in FET 5V No.10036EAT09 BD9757MWV ●Description BD9757MWV is an 8-channel switching regulator with a built-in FET for digital still camera. It has a built-in function to

BD9757MWV

Abstract: bd9757mw
Contextual Info: BD9757MWV Regulators ICs for Digital Cameras and Camcorders Switching Regulator IC with Built-in FET 5V BD9757MWV No.10036EAT09 ●Description BD9757MWV is an 8-channel switching regulator with a built-in FET for digital still camera. It has a built-in function to

HS78

Abstract: bd9757mw
Contextual Info: Regulators ICs for Digital Cameras and Camcorders Switching Regulator IC with Built-in FET 5V No.10036EAT09 BD9757MWV ●Description BD9757MWV is an 8-channel switching regulator with a built-in FET for digital still camera. It has a built-in function to