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    FET 5457 Search Results

    FET 5457 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation
    ISL6146DFRZ Renesas Electronics Corporation Low Voltage ORing FET Controller Visit Renesas Electronics Corporation

    FET 5457 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MwT-471

    Abstract: FET 5457 MwT-470
    Text: MwT-4 26 GHz Low Noise GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns CHIP THICKNESS = 125 FEATURES 50 • 1.5 dB NOISE FIGURE AT 12 GHz • HIGH ASSOCIATED GAIN • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 180 MICRON GATE WIDTH


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    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    STK672-120-E

    Abstract: ITF02596 ITF02597 ITF02605 ITF02606 ITF02607 ITF02608 STK672
    Text: 注文コード No. N 6 0 4 2 A 半導体ニューズ No.N6042 をさしかえてください。 厚膜混成集積回路 STK672-120-E ユニポーラ定電流チョッパ方式 自励 PWM 方式 相信号分配 IC 内蔵 2 相ステッピングモータドライバ(矩形波駆動)


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    N6042 STK672-120-E 40ktyp 025kHz 1042VVDD 52808HKIM /N2098GI CLOCK200Hz STK672-120-E ITF02596 ITF02597 ITF02605 ITF02606 ITF02607 ITF02608 STK672 PDF

    STK672-110-E

    Abstract: ITF02596 ITF02597 ITF02598 ITF02599 ITF02600 ITF02601 STK672
    Text: 注文コード No. N 6 0 4 1 A 半導体ニューズ No.N6041 をさしかえてください。 厚膜混成集積回路 STK672-110-E ユニポーラ定電流チョッパ方式 自励 PWM 方式 相信号分配 IC 内蔵 2 相ステッピングモータドライバ(矩形波駆動)


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    N6041 STK672-110-E 40ktyp 025kHz 1042VVDD 52808HKIM /N2098GI CLOCK200Hz STK672-110-E ITF02596 ITF02597 ITF02598 ITF02599 ITF02600 ITF02601 STK672 PDF

    klystron lamps

    Abstract: MIL-R-19523 MIL-R-5757 Mil-T-23648 MIL-S-8834 mil-s-8805 1000w inverter design and calculation MIL-R-39007 MIL-L-6363 MIL-STD-756
    Text: MIL-HDBK-217F BEF?1991 SUPERSEDING MIL-HDBK-217E, 2 J8nwry 1990 MILITARY NotIce 1 HANDBOOK . RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT AMSC N/A DISTRIBUTION STATEMENT A: Approved for public release; distribution unlimited. MIL-HDBK-217F DEPARTMENT OF DEFENSE


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    MIL-HDBK-217F MIL-HDBK-217E, t331ALTY klystron lamps MIL-R-19523 MIL-R-5757 Mil-T-23648 MIL-S-8834 mil-s-8805 1000w inverter design and calculation MIL-R-39007 MIL-L-6363 MIL-STD-756 PDF

    Q8031

    Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
    Text: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED


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    ITP700FLEX LIP-SM-M42 Q8031 ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H PDF

    FET 2N5459

    Abstract: transistor 5457 fet 2n5457 2n5458 2n5457 2n5459 FET 2N5458 transistor 2N5458 transistor 2N5457 fet junction n-channel transistor
    Text: CRO 2N5458 2N5459 N-CHANNEL JUNCTION FET DESCRIPTION T0-92DD 2N 5457,8.9 is N-Channel Junction Field Effect Transistor designed for VHF/UHF amplifiers and mixer. DSC ABSOLUTE MAXIMUM RATINGS Draiu-Source Voltage VDS 25V Drain Current ID 25mA Gate Current ÍG


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    2N5458 2N5459 T0-92DD 300mW 2N5457 FET 2N5459 transistor 5457 fet 2n5457 FET 2N5458 transistor 2N5458 transistor 2N5457 fet junction n-channel transistor PDF

    e304 fet

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
    Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that


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    K28742 44449SILXHX e304 fet JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686 PDF

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


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    J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10 PDF

    IGD 507 an

    Abstract: MWT-470LN F42 equivalent
    Text: MwT - 4 26 GHz Low Noise GaAs FET MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 F A X 510-651-2208 FEATURES • 1.5 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN •0.3 MICRON REFRACTORY METAL/GOLD GATE • 180 MICRON GATE WIDTH • CHOICE OF CHIP AND TWO PACKAGE TYPES


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    -F42- IGD 507 an MWT-470LN F42 equivalent PDF

    tl241

    Abstract: No abstract text available
    Text: rilCROIilAVE T E C H N O L O G Y bbE ]> • t.l 241 D 0 0000E4A 544 ■MRIilV MwT - 4 m 26 GHz Low Noise GaAs FET m Microwave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX510-651-2208 FEATURES — Isot— • 1.5 dB NOISE FIGURE AT 12 GHZ 3


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    0000E4A FAX510-651-2208 gat70: tl241 PDF

    si5413

    Abstract: 5-101 rn 308
    Text: MwT-4 26 GHz Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y -►j 50 |*- Units In|im ,i Q iu m • • • • • 1.5dB NOISE FIGURE AT 12 GHZ HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE 180 MICRON GATE WIDTH CHOICE OF CHIP AND TWO


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    L1241

    Abstract: MwT-470 MWT4LN MA1866
    Text: gàsrÆ MwT-4 26 GHz Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y Untt* In |im - l - l • 1.5dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 180 MICRON GATE WIDTH • CHOICE OF CHIP AND TWO PACKAGE TYPES


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    Untitled

    Abstract: No abstract text available
    Text: -r-3 h Z 5 MwT-4 GN/SN/LN 26 GHz LOW NOISE GaAs FET DEVICE MICROWAVE T e c h n o l o g y niCROQIAVE 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 TECHNOLOGY 4ÛE D • LIE M ID D T5Q ■ 3 — • • • • • • • • « 84 |— —!5 o |- 3 5 6 -CHIP THICKNESS = 185 MICRONS


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    low noise pseudomorphic

    Abstract: No abstract text available
    Text: MwT - H4 26 GHz Low Noise Pseudomorphic HEMT GaAs FET_ MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES — 50 • 0.9 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN 1241 8.4 •0.3 MICRON REFRACTORY METAL /GOLD GATE


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    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


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    CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756 PDF

    2N4221 motorola

    Abstract: MPF102 switch application mpf102 fet FET 2N5459 MFE131 BF245C FET 5457 2N4220 MOTOROLA 2N5459 MOTOROLA 2N3993
    Text: Transistors Field effect transistors Motorola offers a line of field-effect transistors that encompasses the latest technology and covers the full range of F E T applications. Included is a wide variety of junction FETs and MOSFETs, with N- or P-channel polarity with both single and dual gates. These FETs include devices developed for operation


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    2N5462 MFE824 MPF102 BF245A BF245B BF245C 2N4221 motorola MPF102 switch application mpf102 fet FET 2N5459 MFE131 FET 5457 2N4220 MOTOROLA 2N5459 MOTOROLA 2N3993 PDF

    chw marking sot23

    Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
    Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu


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    triac tag 8518

    Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
    Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference


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    UAA2001

    Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
    Text: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­


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    0HF40 0HF60 0HF80 6FP10 6F100 70HF10 UAA2001 MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402 PDF

    BF195 equivalent

    Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
    Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products


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    LB 124D transistor

    Abstract: TAA970 78L12 cj ne553 TBA915 78M06CG signetics Analogue IC 1977 75S208 MLM311P1 78M08CG
    Text: pages index 2- 3 com petitors cross-reference 4- 9 selection guide 10-13 abridged data 14-24 d iffe re n tia l am plifiers abridged data 25 com parators selection guide 26-27 abridged data 28-31 selection guide 32-35 abridged data 36-39 general industrial


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    SO-16 LB 124D transistor TAA970 78L12 cj ne553 TBA915 78M06CG signetics Analogue IC 1977 75S208 MLM311P1 78M08CG PDF

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF