Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FET 3205 Search Results

    FET 3205 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation
    ISL6146DFRZ Renesas Electronics Corporation Low Voltage ORing FET Controller Visit Renesas Electronics Corporation

    FET 3205 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D1210UK 175MHz D1210UK

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D1210UK 175MHz D1210UK

    3205 FET

    Abstract: FET 3205 transistor c 3205 C 3205 D1210UK
    Text: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D1210UK 175MHz D1210UK 175MHz 3205 FET FET 3205 transistor c 3205 C 3205

    D1210UK

    Abstract: No abstract text available
    Text: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D1210UK 175MHz D1210UK

    FET 3205

    Abstract: 3205 FET D1210UK
    Text: TetraFET D1210UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D1210UK 175MHz D1210UK 175MHz FET 3205 3205 FET

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D1210UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D1210UK 175MHz D1210UK 175MHz

    AN1081S

    Abstract: AN1081 1081S AN6583
    Text: Panasonic Operational Amplifiers A N 1081, AN1081S, A N 6583 Single J-FET Input Operational Amplifiers • Overview The AN1081, the AN1081S and the AN6583 are single operational amplifiers with input stages consisiting of Pch J-FET adopting the ion implantation process, realizing


    OCR Scan     		PDF 1081S, AN6583 AN1081, AN1081S AN6583 1012n 106dB b13gfl5g 001E3bfl AN1081 1081S

    Tc-25-t

    Abstract: 2SK1330A 2SK1330 VJ640 U0-17 I32O
    Text: Power F-MOS FET 2SK1330, 2SK1330A 2SK1330, 2SK1330A Silicon N-Channel Power F-MOS FET Package Dimensions • Features Unit: mm • Low R EB c,n = 1 . 3 i l (typ.) 5.2max. 15.5max. 6.9min. • High speed switching t(= 120ns (typ.) • Secondary breakdown free


    OCR Scan     		PDF 2SK1330, 2SK1330A 120ns 2SK1330 15-5max. VOO-200V Tc-25-t 2SK1330A VJ640 U0-17 I32O

    TL 1084

    Abstract: 2SK766 1084 fet
    Text: P o w er F-MOS FET 2SK766 2SK766 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance R ds on : R ds (on) = 2 .4 fl (typ.) • High switching rate : tf = 35ns (typ.) • No secondary breakdown • High breakdown voltage


    OCR Scan     		PDF 2SK766 O-220 TL 1084 2SK766 1084 fet

    2SK766

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK766 2SK766 Silicon N-channel Power F-MOS FET • Package Dimensions ■Features • Low ON resistan ce R ds on : R Ds (on) = 2 .4 f l (ty p .) Unit: mm • High switching rate : tf = 35ns (typ.) • No secondary breakdown • High breakdown voltage


    OCR Scan     		PDF 2SK766 0170fll 99Z5ISZ 2SK766

    2SK770

    Abstract: No abstract text available
    Text: P ow er F-MOS FET 2SK770 2SK770 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON resistan ce RDs on : RDS (on) = 3 .5 il (typ.) • High sw itching ra te : tf= 3 0 n s (typ.) • No secondary breakdow n • High breakdow n voltage


    OCR Scan     		PDF 2SK770 O-220 VDO-I50V 2SK770

    2SK1036

    Abstract: No abstract text available
    Text: P o w e r F-MOS FET 2SK10 3 6 2S K 1036 Silicon N-channel Power F-M OS FET P ackage Dimensions • F eatures • Low ON resistance RCs on : RDs (on) = 0.211 (typ.) • High switching rate : tf = 80ns (typ.) • No secondary breakdown Unit: mm Di uvJ i o


    OCR Scan     		PDF 2SK1036 O-220 D01713Ã 2SK1036

    2SK1331

    Abstract: No abstract text available
    Text: P o w er F-MOS FET 2SK1331 2SK1331 Silicon N-Channel Power F-M O S FET Package Dimensions • Features • Low R r d <o„ = 0 .3 8 ii typ.) Unit: mm 5.2max. . 15.5max. 6.9min. • High speed sw itching t f= 100ns (typ.) • Secondary breakdow n free 3.2


    OCR Scan     		PDF 2SK1331 100ns b132fi52 Q017174 2SK1331

    2SK1262

    Abstract: 2SK12
    Text: P o w er F-MOS FET 2SK 1262 2SK 1262 Silicon N-channel Power F-M O S FET • Package Dim ensions ■ Features • Low ON resistance R d s on : R Us (on) l = 0.048fl (typ.) • High switching ra te : tf = 190ns (typ.) Unit: mm • No secondary breakdow n


    OCR Scan     		PDF 2SK1262 048fl 190ns 2SK1262 2SK12

    2SK996

    Abstract: 1128A FET 1127
    Text: P o w er F-MOS FET 2SK 996 2SK996 Silicon N-channel Power F-M O S FET Package Dim ensions • Features • Low ON resistan ce R ds on : R d s (on) = 1 .2 ii (typ.) • High sw itching ra te : tf = 60ns (typ.) • No secondary breakdown Unit: mm .10 2rr L4m ax


    OCR Scan     		PDF 2SK996 171BS 001712b 2SK996 1128A FET 1127

    2SK981

    Abstract: 2SK981A
    Text: P o w e r F-MOS FET 2SK981, 2SK 981A 2SK981, 2SK981A Silicon N-channel Power F-MOS FET P ackage Dim ensions • Features • Low ON resistan ce R Ds on : RDs (on) = 2. Oil (typ.) Unit: mm • High sw itching ra te : tt = 40ns (typ.) 3.7m ax 7.3max. • No secondary breakdow n


    OCR Scan     		PDF 2SK981, 2SK981A 2SK981 2SK981A G017121

    2SK807

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK807 2SK807 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce R DS on : RDb (on) = l . l i l (typ.) • High switching ra te : tf= 7 0 n s (typ.) Unit: mm • No secondary breakdow n • High breakdow n voltage, large pow er


    OCR Scan     		PDF 2SK807 2SK807

    2SK1330

    Abstract: 2SK1330A
    Text: P o w er F-MOS FET 2SK1330, 2SK1330A 2S K 1330, 2S K 1330A Silicon N-Channel Power F-M OS FET • P ackage Dim ensions ■ Features • Low R rd on =1.3il (typ.) • High speed switching t(= 120ns (typ.) • Secondary breakdow n free • High breakdow n voltage, high pow er


    OCR Scan     		PDF 2SK1330, 2SK1330A 120ns 2SK1330 2SK1330A

    2SK757

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK 757 2SK757 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON resistan ce R ds on : R ds Unit: mm (on) = 0 .2 2 il (typ.) • High sw itching ra te : tr= 6 0 n s (typ.) • No secondary breakdow n ■ Application


    OCR Scan     		PDF 2SK757 2SK757

    2SK765A

    Abstract: 2SK765
    Text: P o w e r F-MOS FET 2SK765, 2SK 765A 2SK765, 2SK765A Silicon N-channel Power F-MOS FET Package Dimensions • Features • • • • Low ON resistance R ds on : R Ds (on) = 0 .5ft (typ.) High switching rate : tf= 9 0n s (typ.) No secondary breakdown High breakdown voltage, large power


    OCR Scan     		PDF 2SK765, 2SK765A 2SK765 2SK765A --55----h D0170a0

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK796, 2SK796A 2SK796, 2SK796A Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON r e s is ta n c e R ds on : R DS (on) = 3 . OH (ty p .) Unit: mm • High sw itch in g r a te : t f = 4 0 n s (ty p .) k 15._5max.


    OCR Scan     		PDF 2SK796, 2SK796A

    2SK1260

    Abstract: JI35
    Text: P o w er F-MOS FET 2SK1260 2S K 1260 Silicon N-channel Power F-M O S FET • Package Dimensions ■ Features • Low ON resistan ce R ds on : R ds (on) l = 0 .3 1 5 ii (typ.) Unit: mm • High switching rate : t f= 3 8 n s (typ.) • No secondary breakdown


    OCR Scan     		PDF 2SK1260 315ii 2SK1260 JI35

    2SK769

    Abstract: No abstract text available
    Text: P o w er F-MOS FET 2SK769 2SK769 Silicon N-channel Power F-MOS FET • Package D im ensions ■ Features • L ow O N r e s is ta n c e Rui on : R Ds (on) = 0 ,6 5 il (ty p .) Unit: mm • H igh sw itch in g r a te : t f = 9 0 n s (ty p .) 5.2max 15 5max


    OCR Scan     		PDF 2SK769 VDO-150V Tc-25C G0170Ã

    2SK1036

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK1036 2SK1036 Silicon N-channel Power F-MOS FET Package Dimensions •Features • Low ON r e s is ta n c e R ds on : R ds (on) = 0 . 2 f t (ty p .) Unit: mm • High sw itch in g ra te : ti = 8 0 n s (ty p .) 5 7m ax. • No seco n d a ry breakdow n


    OCR Scan     		PDF 2SK1036 29max