MPF910
Abstract: MFE910 power semiconductor 1973
Text: I MFE910 MPF910 N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTOR This TMOS FET is designed for high-voltage, high-speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor of UL-to-high voltage interface and high voltage
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MFE910
MPF910
O-205AD
MPF910
MFE910
power semiconductor 1973
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M68710EL SILICON MOS FET POWER AMPLIFIER, 290-330MHz, 2W, FM PORTABLE RADIO D im ensions in mm OUTLINE DRAWING BLOCK DIAGRAM • “FT’ I PIN: ABSOLUTE MAXIMUM RATINGS Symbol Supply voltage V gg Gate bias voltage Pin Input power
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M68710EL
290-330MHz,
290-330M
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Untitled
Abstract: No abstract text available
Text: SN74CBTS3384 10-BIT FET BUS SWITCH WITH SCHOTTKY DIODE CLAMPING SCDS024M – MAY 1995 – REVISED JULY 2003 D D DB, DBQ, DGV, DW, OR PW PACKAGE TOP VIEW 5-Ω Switch Connection Between Two Ports TTL-Compatible Input Levels 1OE 1B1 1A1 1A2 1B2 1B3 1A3 1A4
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SN74CBTS3384
10-BIT
SCDS024M
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M68710EL SILICON MOS FET POWER AMPLIFIER, 290-330MHZ, 2W, FM PORTABLE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm a © 1 PIN: 0 P in : RF INPUT ©VG G : GATE BIAS SUPPLY © V dd : DRAIN BIAS SUPPLY PO : RF OUTPUT © G N D : FIN
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M68710EL
290-330MHZ,
290-330M
in-20mW
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M68710EL
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M68710EL SILICON MOS FET POWER AMPLIFIER, 290-330MHz, 2W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 30±0.2 2 26.6±0.2 21.2±0.2 3 2-R1.5±0.1 1 4 5 1 2 3 4 5 0.45 6±1 13.7±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY
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M68710EL
290-330MHz,
M68710EL
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MPF910
Abstract: No abstract text available
Text: MOTOROLA SEM IC O N D U C T O R MFE910 MPF910 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE TM OS FIELD-EFFECT TRANSISTOR 60 VOLTS T h is T M O S FET is d e sig n e d for high-voltage, h igh -sp e ed sw itch ing applications su c h as line drivers, relay drivers, C M O S logic,
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MFE910
MPF910
MPF910
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M2N6660
Abstract: 2N6660 Mosfet 2903 MPF6661
Text: MOTOROLA SEM ICONDUCTOR 2N6660 MPF6660 2N6661 MPF6661 TECHNICAL DATA N-CHANNEL ENH ANCEM ENT-M ODE TM O S FIELD-EFFECT TRANSISTOR 2 .0 A M P E R E N -C H A N N E L T M O S FET T h e s e T M O S FETs are d e s ig n e d fo r h ig h -s p e e d s w itc h in g a p p li
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2N6660
MPF6660
2N6661
MPF6661
2N6660/2N6661
MPF6660/MPF6661
2N6661
M2N6660
Mosfet 2903
MPF6661
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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RD1004
Abstract: 2SC5707 2sK4096 ECH81 rd1004ls 2SK4101 tf252th SFT1443 vf10bm3 RD2006
Text: ディスクリートデバイス 2010-7 環境にやさしい製品 超アナログ技術を極めるPower ＆RFデバイス Power 電 源 市 場 耐熱性 高アバランシェ 高耐圧・大電流 高効率 高ESD ・パワーマネジメント （LCDPDP、PC電源、照明）
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CDMA2000]
3-7300Fax
OVA21
052-453-1331Fax
06-6353-3361Fax
03-5701-1111Fax
078-928-8010Fax
078-331-8400Fax
075-371-4058Fax
052-459-3501Fax
RD1004
2SC5707
2sK4096
ECH81
rd1004ls
2SK4101
tf252th
SFT1443
vf10bm3
RD2006
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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IC 741 OPAMP
Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
Text: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte
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2N6661
Abstract: 2N6659 2N6660 MPF6659 MPF6660 MPF6661 N666
Text: MOTOROLA MAXIMUM RATINGS 2N6659 2 N6660 2N6661 Symbol MPF6659 m rrpoou MPF6661 t Rating Unft Drain-Source Voltage Vd s 35 60 90 Vdc Drain-Gate Voltage Vd G 35 60 90 Vdc Gate-Source Voltage VGS Drain Current — Continuous 1 Pulsed (2) ± 30 Vdc 2.0 3.0 'd m
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2N6659
MPF6659
2N6660
MPF6660
2N6661
MPF6661
2N6661
MPF6660
N666
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B0218
Abstract: Transistor B1214
Text: Multi-Cell Li-Ion Battery Manager ISL94212 Features The ISL94212 is a Multi-cell Li-ion battery manager IC that supervises up to 12 series connected cells. The part performs accurate monitoring, cell balancing and extensive system diagnostics functions. Three cell balancing modes are
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ISL94212
ISL94212
12-cell
ISL94212s
254mm.
MS-026,
FN7938
B0218
Transistor B1214
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F6659
Abstract: F6660
Text: MPF6659 thru MPF6661* MAXIMUM RATINGS Rating Symbol MPF6659 MPF6660 MPF6661 D ra in -S o u rc e V o lta g e D ra in -G a te V o lta g e G a te -S o u rc e V o lta g e VG S ±30 D ra in C u rre n t — C o n tin u o u s 1 P u lse d (2) lD 'D M 2.0 3.0 Unit
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MPF6659
MPF6660
MPF6661
MPF6661*
F6659
F6660
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741n
Abstract: 3900BE 741J bm 308 an 3900AE
Text: ANALOGUE INTEGRATED REGULATORS, S SWITCH-MODE TDA POWER 4SQ1D OR. CIRCUITS & AMR s SUPPLY COMRARATORS l i ^ L U i S.A. n CONTROLLER Features : 0 . 7.8 11 110 4 . Operating temperature : Supply voltage : Switch voltage V9 : Supply current : Voltage reference VI :
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O-116
741n
3900BE
741J
bm 308 an
3900AE
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HRMA-0470B
Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic
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E-28230
S-164
CH-8902
HRMA-0470B
Semicon volume 1
HPMA-2085
HP 33002A
AVANTEK ATF26884
SJ 2036
HPMA-0470TXV
HPMA-0485
HPMA-0370
DIODE GOC 61
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intel 845 MOTHERBOARD pcb CIRCUIT diagram
Abstract: 200D6 SMD DIP-8 marking code E5 SMD ic sot23-5 4256 bwp TRANSISTOR SMD 6CW TL494 car charger schematic diagram SMD 6cw LM385 1.25V zener 6cw smd code marking mc7812a
Text: DL128/D Rev. 7, Mar-2002 Analog Integrated Circuits Power Management, Signal Conditioning and ASSP Devices Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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DL128/D
Mar-2002
r14525
DL128
intel 845 MOTHERBOARD pcb CIRCUIT diagram
200D6 SMD DIP-8
marking code E5 SMD ic sot23-5
4256 bwp
TRANSISTOR SMD 6CW
TL494 car charger schematic diagram
SMD 6cw
LM385 1.25V zener
6cw smd code marking
mc7812a
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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M2902
Abstract: M2945 Tektronix 2901 M2903 fet 2903 M2944 M2948 H2900 H2936 H2945
Text: FULL SIZE D.I.L M2900, M2936 M2944, M2945 M2948 FIXED OSCILLATORS ECL and PECL 0° to 70°C HALF SIZE D.I.L H2900, H2936 H2944, H2945 H2948 Thru-Hole / Gull Wing ECLPS Logic 10 MHz to 410 MHz ECLPS, HIGH SPEED, LOW JITTER These ECLPS logic oscillators are our most advanced
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M2900,
M2936
M2944,
M2945
M2948
H2900,
H2936
H2944,
H2945
H2948
M2902
M2945
Tektronix 2901
M2903
fet 2903
M2944
M2948
H2900
H2936
H2945
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H2936
Abstract: M2945 fet 2903 H2900 H2944 H2945 H2948 M2900 M2901 M2936
Text: CRYSTAL OSCILLATORS ECL and PECL Thru-Hole / Gull Wing FULL SIZE D.I.L M package HALF SIZE D.I.L H package M2900, M2936 M2944, M2945 M2948 H2900, H2936 H2944, H2945 H2948 Description ECLPS, HIGH SPEED, LOW JITTER Commercial: 0º to 70ºC 10 MHz to 175 MHz
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M2900,
M2936
M2944,
M2945
M2948
H2900,
H2936
H2944,
H2945
H2948
H2936
M2945
fet 2903
H2900
H2944
H2945
H2948
M2900
M2901
M2936
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Untitled
Abstract: No abstract text available
Text: 0J N> t\3 cn CD O m rp § O T Ol CD z B a > r £ O P E R A T IO N A L H D > ft A M P L IF IE R S 0 01 4ft n o z CO s M H H W O n x i x r r w to o D w no o to TJ w c M H » 1 x o D w m o c G r > H a 03 to cn G no *0 r G O Z TJ o 10 O r c P3 to h- -J o o < n
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O-116
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TO92A
Abstract: No abstract text available
Text: ÛB MICRO ELECTRONICS CORP T - t- J ' ^ 7 DE I kCHlTflü 0DDÜb7M 0 . Multiple Transistors V C E SA T Ul 11. NO. M A X IM U M R A T IN G S X TYPE P O L A R IT Y DU AL TR AN SIST O R S Au H FE C ASE Pd (mW) 'c VCE0 (mA) (V) min max V CE 'c (mA) (V) Av BE
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O-237
MELF-002.
MELF006
L0T17aa
O-181LOW
TO92A
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032XM
Abstract: 17-B2 BE31 341S
Text: 17B2 2 METER BOOMER 144-145 MHz cushcraft C O R P O R A T I O N 951415 7/92 WARNING TH IS ANTENNA IS AN E LEC T R IC A L CONDUCTOR CONTACT WITH POW ER LIN ES CAN R ES U LT IN DEATH. O R SER IO U S IN JU RY. DO NOT IN STALL TH IS ANTENNA W H ERE TH ER E IS ANY P O SSIB ILITY O F CONTACT WITH O R HIGH VO LTAGE ARC-O VER FROM
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