"Ferroelectric RAM"
Abstract: ferroelectric ram FM1208S RAM word-line driver 1994 ferroelectric
Text: FM1208S FRAM Memory 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 • CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation
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FM1208S
096-Bit
200ns
400ns
24-Pin)
1208S
"Ferroelectric RAM"
ferroelectric ram
RAM word-line driver 1994
ferroelectric
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"Ferroelectric RAM"
Abstract: FM1608S ferroelectric ram RAMTRON
Text: FM1608S FRAM Memory 65,536-Bit Nonvolatile Ferroelectric RAM Product Specification Features 65,536 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 8,192 x 8 • CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation
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FM1608S
536-Bit
180ns
320ns
28-Pin)
1608S
"Ferroelectric RAM"
ferroelectric ram
RAMTRON
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PDF
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TCA 720
Abstract: "Ferroelectric RAM" 1822-HEX A8-12 Ramtron International Corporation
Text: E C N A ADV FM1808S FRAM Memory 262,144-Bit Nonvolatile Ferroelectric RAM Product Preview Features 256K Nonvolatile Ferroelectric RAM Organized as 32,768 words x 8 bits • CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation
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FM1808S
144-Bit
150ns
235ns
FM1808S
28-Pin)
1808S
TCA 720
"Ferroelectric RAM"
1822-HEX
A8-12
Ramtron International Corporation
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PDF
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ferroelectric
Abstract: No abstract text available
Text: Technical Paper The Endurance Performance of 0.5µ µm FRAM Products Authors: Fan Chu and Tom Davenport INTRODUCTION Ferroelectric random access memories FRAMs are nonvolatile memory devices that store data by using the bi-stable switchable polarization state of a ferroelectric material. Ferroelectric thin films
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FM28V020-T
Abstract: No abstract text available
Text: FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32K x 8 1014 Read/Write Cycles NoDelay Writes Page Mode Operation Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
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FM28V020
256Kbit
32Kx8
28-pin
-T28G)
32-pin
FM28V020-T
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PDF
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flash "high temperature data retention" mechanism
Abstract: EEPROM retention testing FM24C16 flash Activation Energy
Text: Technology Note FM24C16 Data Retention Characterization – Updated 5/00 Overview Ramtron technology notes provide technical insight into the operation of ferroelectric memory technology. They explain the fundamental performance of one or more aspects of ferroelectric
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FM24C16
FM24C16.
flash "high temperature data retention" mechanism
EEPROM retention testing
FM24C16
flash Activation Energy
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PDF
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"dual access" "nonvolatile memory" -RFID
Abstract: rfid reader 915MHZ WM72016 EPC gen2
Text: Preliminary WM72016 16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access DESCRIPTION FEATURES The WM72016 is a RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access
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WM72016
16Kbit
WM72016
"dual access" "nonvolatile memory" -RFID
rfid reader 915MHZ
EPC gen2
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PDF
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Untitled
Abstract: No abstract text available
Text: Memory IC 16kbit serial ferroelectric memory BR24CF16F The BR24CF16F is a non-volatile ferroelectric memory developed for use in ROHM's non-volatile memory technolo gy and ferroelectric technology. Using a ferroelectric memory enables faster writing speeds than EEPROM and flash
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16kbit
BR24CF16F
BR24CF16F
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PDF
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Untitled
Abstract: No abstract text available
Text: Memory IC 16kbit serial ferroelectric memory BR24CF16F The BR24CF16F is a non-volatile ferroelectric memory developed for use in ROHM’s non-volatile memory technolo gy and ferroelectric technology. Using a ferroelectric memory enables faster writing speeds than EEPROM and flash
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16kbit
BR24CF16F
BR24CF16F
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PDF
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XLU2
Abstract: No abstract text available
Text: r ^ M $ T R FM1608SFRAM Memory O N 65,536-Bit Nonvolatile Ferroelectric RAM Product Specification Preliminary Features • 65,536 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 8 ,1 9 2 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells
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OCR Scan
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FM1608SFRAM®
536-Bit
180ns
320ns
CM09TTL
FM1608Sis
1608S
XLU2
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PDF
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Untitled
Abstract: No abstract text available
Text: FM1608S FRAM Memory r^ M 65,536-Bit Nonvolatile Ferroelectric RAM Product Specification T R O N Features • 65,536 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 8,192 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation
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OCR Scan
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FM1608S
536-Bit
180ns
320ns
1608S
28-Pin)
1608S
7SS501S
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PDF
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Ferroelectric RAM
Abstract: FM1208S
Text: FM1208SFRAM Memory Î^ IM IR O N 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation
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OCR Scan
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FM1208SFRAM®
200ns
400ns
096-Bit
FM1208S
24-Pln)
1208S
Ferroelectric RAM
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PDF
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Ferroelectric RAM
Abstract: No abstract text available
Text: FM1208S FRAM Memory r ^ M T R O N 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation
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OCR Scan
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FM1208S
096-Bit
200ns
400ns
24-Pin)
1208S
512x8
Ferroelectric RAM
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PDF
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Untitled
Abstract: No abstract text available
Text: HAR ü < '5,. FM 1408S FRAM Memory r^ M T R Ü N 16,384-Bit Nonvolatile Ferroelectric RAM Product Preview Features • 16,384-Bit Nonvolatile Ferroelectric RAM Organized as 2Kw x 8b ■ CMOS Technology with Integrated Nonvolatile Ferroelectric Storage Cells
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OCR Scan
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1408S
384-Bit
150ns
300ns
10-Year
24-Pin
24-Pin)
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PDF
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Ferroelectric RAM
Abstract: "Ferroelectric RAM" mtron til 081 1408S ferroelectric
Text: FM1408S FRAM Memory r^ M T R O IM 16,384-Bit Nonvolatile Ferroelectric RAM Product Preview Features • 16,384-Bit Nonvolatile Ferroelectric RAM Organized as 2Kw x 8b ■ CMOS Technology with Integrated Nonvolatile Ferroelectric Storage Cells ■ Fully Synchronous Symmetrical Operation
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OCR Scan
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1408S
384-Bit
150ns
300ns
10-Year
24-Pin
24-Pin)
Ferroelectric RAM
"Ferroelectric RAM"
mtron
til 081
ferroelectric
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PDF
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Ferroelectric RAM
Abstract: 1208S FM1208S
Text: I FM1208SFRAM Memory 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification r^ p M T R O N Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation
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OCR Scan
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FM1208SFRAM®
250ns
500ns
096-Bit
1208S
24-Pin)
512x8
Ferroelectric RAM
FM1208S
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PDF
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Untitled
Abstract: No abstract text available
Text: OCT 2 j a FMx 1408FRAM Memory r ^ 3 M 16,384-Bit Nonvolatile Ferroelectric RAM Engineering Evaluation U n ir T R O N Features • 16,384-Bit Nonvolatile Ferroelectric RAM Organized as 2,048w x 8b ■ CMOS Technology with Integrated Ferroelectric Storage Cells
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OCR Scan
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1408FRAMÂ
384-Bit
150ns
300ns
28-Pin)
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 4 19W FM 1208FRAM Memory r^ M T R O N 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Symmetrical Operation with Two
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OCR Scan
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1208FRAMÂ
096-Bit
512wx
10-Year
150ns
300ns
250ns
500ns
24-Pin)
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PDF
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transistor A4t
Abstract: transistor A4t 45 transistor A4t 35 transistor A4t 16
Text: ï éoJm RAfITRON CORP 33E D 755SD15 aGOQG71 □ FMx 1208FRAM Memory r ^ M 4,096-Bit Nonvolatile Ferroelectric RAM Engineering Evaluation Unit* T R ü N v Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512w x 8b ■ CMOS Technology with Integrated Ferroelectric
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OCR Scan
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755SD15
aGOQG71
1208FRAM®
096-Bit
-250ns
500ns
-44mW
124-Pin
7S5S015
transistor A4t
transistor A4t 45
transistor A4t 35
transistor A4t 16
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fm1408
Abstract: No abstract text available
Text: MAR i •: ',!< FM 1408/1608FRAM Memory r ^ M T R O 16,384- and 65,536-Bit Nonvolatile Ferroelectric RAMs Product Preview N Features ■ 16,384- and 65,536-Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 2,048 x 8 and 8,192 x 8 ■ CMOS Technology with Integrated Ferroelectric
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1408/1608FRAM®
536-Bit
10-Year
-80ns
160ns
28-Pin)
fm1408
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PDF
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1208S
Abstract: No abstract text available
Text: SñE J> 7555015 RAPITRON C ORP MIRON 000023b I S l f l H R AM ' T 1208SFRAM Memory 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells
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000023b
1208SFRAMÂ
096-Bit
250ns
500ns
1208S
24-Pln)
512x8
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PDF
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FM1208S
Abstract: Ferroelectric RAM mtron "Ferroelectric RAM" ramtron FRAM
Text: F M 1 2 0 8 S F R A M M e m o ry r^ p M T R O 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification N Features • 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ CMOS Technology with Integrated Ferroelectric Storage Cells
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OCR Scan
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FM1208S
096-Bit
200ns
400ns
24-Pin)
1208S
512x8
7SSS01S
Ferroelectric RAM
mtron
"Ferroelectric RAM"
ramtron FRAM
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PDF
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PJ 0416 1v
Abstract: til 3010 1208FRAM 7S5SG15
Text: RAMTRON 4SE CORP D 7SSSG15 GGÜÜO^b 12D I RAH F M 1 2 0 8 F R A M M e m o ry r ^ lM T R O 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview N Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ CMOS Technology with Integrated Ferroelectric
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OCR Scan
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7S5SG15
1208FRAMÂ
096-Bit
512wx8b
10-Year
-150ns
300ns
250ns
24-Pin)
PJ 0416 1v
til 3010
1208FRAM
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PDF
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Ferroelectric RAM
Abstract: micron sram 5v 512*8
Text: 2 4 19W F M 1 2 0 8 F R A M F ^ M M e m o ry 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview T R O I M Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx 8b ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Symmetrical Operation with Two
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OCR Scan
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096-Bit
512wx8b
10-Year
FM1208FRAMÂ
150ns
300ns
250ns
500ns
24-Pin)
Ferroelectric RAM
micron sram 5v 512*8
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