FDS6670 Search Results

FDS6670A

Abstract: SOIC-16
Contextual Info: June 2001 FDS6670A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior

FDS6670AS

Abstract: FDS6670A
Contextual Info: FDS6670AS 30V N-Channel PowerTrench“ SyncFET General Description Features The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

FDS6670AS

Abstract: FDS6670AS_NL
Contextual Info: tm FDS6670AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: F A IR C H IL D July 1998 S E M IC O N D U C T O R tm FDS6670A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

CBVK741B019

Abstract: F011 F63TNR F852 FDS6670A FDS6670S FDS9953A L86Z
Contextual Info: FDS6670S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6670S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

FDS6670A

Abstract: FDS6670AS
Contextual Info: FDS6670AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

6670A

Contextual Info: FDS6670A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

Contextual Info: FDS6670A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

Contextual Info: E A IB C U III n J a n u a ry 1 9 9 8 ADVANCE INFORMATION M lC O N D U C T O R m FDS6670A Single N-Channel, Logic Level, PowerTrench, MOSFET Genera IDescript ion Features These N-Channel Logic Level MOSFETS are produced using Fairchild Semiconductor's advanced

FDS6670A

Contextual Info: FDS6670A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

FDS6670A

Abstract: SOIC-16 Supersot 6
Contextual Info: FAIRCHILD M IC O N D U C T O R July 1998 tm FDS6670A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

FDS6670A

Abstract: FDS6670AS fast recovery schottky diode
Contextual Info: tm FDS6670AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: F/\IRCHII_0 M IC D N D U C T O R July 1998 tm FDS6670A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features T h is N -C hannel Logic Level M O S F E T is produced using Fairchild S e m ico n d u cto r's advanced P ow erTrench process th a t has been e sp ecially tailored to m inim ize the

F011

Abstract: F63TNR F852 FDS6670A L86Z SOIC-16
Contextual Info: July 1998 FDS6670A Single N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior

Contextual Info: tm FDS6670AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: FDS6670AS 30V N-Channel PowerTrench“ SyncFET General Description Features The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

FDS6670A

Abstract: FDS6670S
Contextual Info: FDS6670S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6670S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

bq24721C

Abstract: SLUS683F BAT54 BAT54C bq24721 bq24721CRHBR bq24721CRHBT bq24721RHBR bq24721RHBT SI4435
Contextual Info: Not Recommended For New Designs bq24721 bq24721C www.ti.com. SLUS683F – NOVEMBER 2005 – REVISED APRIL 2009

square d LC circuit breaker curves

Abstract: MIC2590B MIC2590B-2BTQ MIC2590B-5BTQ
Contextual Info: MIC2590B Dual-Slot PCI Hot Plug Controller General Description Features The MIC2590B is a power controller supporting power distribution requirements for Peripheral Component Interconnect PCI hot plug compliant systems incorporating the Intelligent Platform Management Interface (IPMI). The

bq24721 equivalent

Abstract: bq24721 BQ24721C
Contextual Info: bq24721 bq24721C www.ti.com . SLUS683E – NOVEMBER 2005 – REVISED NOVEMBER 2008 ADVANCED MULTI-CHEMISTRY AND MULTI-CELL SYNCHRONOUS SWITCH-MODE

L6911E

Abstract: L6911ETR SO20 STS12NF30L TLC7701 smd diode code F3 fuse smd code N STPS3L25U
Contextual Info: L6911E 5 BIT PROGRAMMABLE STEP DOWN CONTROLLER WITH SYNCHRONOUS RECTIFICATION • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ OPERATING SUPPLY IC VOLTAGE FROM 5V TO 12V BUSES UP TO 1.3A GATE CURRENT CAPABILITY TTL-COMPATIBLE 5 BIT PROGRAMMABLE OUTPUT COMPLIANT WITH VRM 8.5 :

MAX1710

Abstract: MAX1710EVKIT MAX1711 MAX1711EEG T510X477M006AS high power pulse generator with mosfet DO5022P-222HC MTD3055 mosfet hitachi
Contextual Info: 19-4781; Rev 0; 11/98 MAX1710 Evaluation Kit The MAX1710 evaluation kit EV kit demonstrates the data sheet’s standard 7A notebook CPU application circuit (see MAX1710/MAX1711 data sheet). This DC-DC converter steps down high-voltage batteries and/or AC

C3216X7R1E105K

Abstract: MAX1535 MAX1535ETJ TMK316BJ105KL
Contextual Info: 19-2848; Rev 0; 4/03 KIT ATION EVALU E L B A AVAIL Highly Integrated Level 2 SMBus Battery Charger Applications ♦ Intel SMBus 2-Wire Serial Interface ♦ ±0.5% Charge-Voltage Accuracy ♦ 11-Bit Charge-Voltage Resolution ♦ ±3% Input Current-Limit Accuracy

LTC3832

Abstract: MBR330T3 LTC3832-1 LTC3832EGN MBR0520T1 Si9426DY SSOP-16 EEFUEOD271R sn3832 sanyo mv-wx Series
Contextual Info: LTC3832/LTC3832-1 High Power Step-Down Synchronous DC/DC Controllers for Low Voltage Operation U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 3832/LTC3832-1 are high power, high efficiency switching regulator controllers optimized for