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    FDPF680N10T Price and Stock

    onsemi FDPF680N10T

    MOSFET N-CH 100V 12A TO220F
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    DigiKey FDPF680N10T Tube 1,000
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    Avnet Americas FDPF680N10T Tube 0 Weeks, 2 Days 1,250
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    Newark FDPF680N10T Bulk 350
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    Rochester Electronics FDPF680N10T 6,995 1
    • 1 $0.6508
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    • 100 $0.6118
    • 1000 $0.5532
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    Flip Electronics FDPF680N10T 17,535
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    Rochester Electronics LLC FDPF680N10T

    MOSFET N-CH 100V 12A TO220F
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    DigiKey FDPF680N10T Bulk 444
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    Flip Electronics FDPF680N10T

    N-CHANNEL POWERTRENCH MOSFET 100
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    DigiKey FDPF680N10T Tube 1,000
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    Aptina Imaging FDPF680N10T

    Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220FP Tube
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    Verical FDPF680N10T 6,995 491
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    Fairchild Semiconductor Corporation FDPF680N10T

    Power Field-Effect Transistor, 12A, 100V, 0.068ohm, N-Channel, MOSFET, TO-220AB
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    Rochester Electronics FDPF680N10T 39,332 1
    • 1 $0.6508
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    • 100 $0.6118
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    FDPF680N10T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDPF680N10T Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 12A TO-220F Original PDF

    FDPF680N10T Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FDPF680N10T N-Channel PowerTrench MOSFET 100 V, 12 A, 68 mΩ Features Description • RDS on = 54 mΩ ( Typ.)@ VGS = 10 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original
    PDF FDPF680N10T O-220F

    Untitled

    Abstract: No abstract text available
    Text: FDPF680N10T N-Channel PowerTrench MOSFET 100V, 12A, 68mΩ Features Description • RDS on = 54mΩ ( Typ.)@ VGS = 10V, ID = 6A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    PDF FDPF680N10T O-220F FDPF680N10T

    FDPF680N10T

    Abstract: No abstract text available
    Text: FDPF680N10T N-Channel PowerTrench MOSFET 100V, 12A, 68mΩ Features Description • RDS on = 54mΩ ( Typ.)@ VGS = 10V, ID = 6A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    PDF FDPF680N10T O-220F FDPF680N10T

    Untitled

    Abstract: No abstract text available
    Text: FDPF680N10T N-Channel PowerTrench MOSFET 100 V, 12 A, 68 mΩ Features Description • RDS on = 54 mΩ ( Typ.)@ VGS = 10 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original
    PDF FDPF680N10T O-220F

    Untitled

    Abstract: No abstract text available
    Text: FDPF680N10T N-Channel PowerTrench MOSFET 100 V, 12 A, 68 mΩ Features Description • RDS on = 54 mΩ (Typ.) @ VGS = 10 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original
    PDF FDPF680N10T O-220F