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    FDP027N08B_F102 Search Results

    FDP027N08B_F102 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    0603AF-102XJEW Coilcraft Inc General Purpose Inductor, 5%, 1 Element, Ferrite-Core, SMD, 0603, CHIP, 0603, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
    0603AF-102XJR Coilcraft Inc Not recommended for new designs. Change 'R' to 'E' for Visit Coilcraft Inc
    0603AF-102XJE Coilcraft Inc RF inductor, ferrite core, 5% tol, SMT, RoHS, halogen-free Visit Coilcraft Inc
    0603AF-102X Coilcraft Inc RF inductor, ferrite core, 5% tol, SMT, RoHS, halogen-free Visit Coilcraft Inc
    0603AF-102XJEU Coilcraft Inc General Purpose Inductor, 1uH, 5%, 1 Element, Ferrite-Core, SMD, 0704, CHIP, 0704, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
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    FDP027N08B_F102 Price and Stock

    onsemi FDP027N08B-F102

    MOSFET N-CH 80V 120A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDP027N08B-F102 Tube 575 1
    • 1 $3.44
    • 10 $3.44
    • 100 $3.44
    • 1000 $1.46362
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    Avnet Americas FDP027N08B-F102 Tube 0 Weeks, 2 Days 424
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    • 1000 $1.40476
    • 10000 $1.38824
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    Mouser Electronics FDP027N08B-F102 1,064
    • 1 $3.13
    • 10 $2.64
    • 100 $1.73
    • 1000 $1.46
    • 10000 $1.46
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    Verical FDP027N08B-F102 80,800 197
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    Newark FDP027N08B-F102 Bulk 82 1
    • 1 $3.55
    • 10 $3.04
    • 100 $2.3
    • 1000 $1.94
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    Onlinecomponents.com FDP027N08B-F102
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    Rochester Electronics FDP027N08B-F102 80,800 1
    • 1 $1.63
    • 10 $1.63
    • 100 $1.53
    • 1000 $1.39
    • 10000 $1.39
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    Richardson RFPD FDP027N08B-F102 800
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    Avnet Silica FDP027N08B-F102 18 Weeks 50
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    EBV Elektronik FDP027N08B-F102 19 Weeks 50
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    Flip Electronics FDP027N08B-F102 1,382
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    New Advantage Corporation FDP027N08B-F102 43,200 1
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    • 1000 $2.27
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    Wuhan P&S FDP027N08B-F102 28,800 1
    • 1 $4.09
    • 10 $4.09
    • 100 $2.61
    • 1000 $1.98
    • 10000 $1.98
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    onsemi FDP027N08B_F102

    Trans MOSFET N-CH 80V 223A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: FDP027N08B-F102)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FDP027N08B_F102 Tube 17 Weeks 800
    • 1 -
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    • 1000 $1.4994
    • 10000 $1.37753
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    Avnet Asia FDP027N08B_F102 17 Weeks 800
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    • 1000 $1.54066
    • 10000 $1.44556
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    Others FDP027N08B-F102

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange FDP027N08B-F102 37,836
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    onsemi FDP027N08B-F102-01

    Stock
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    Flip Electronics FDP027N08B-F102-01 14,400
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    FDP027N08B_F102 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDP027N08B_F102 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 120A TO-220-3 Original PDF
    FDP027N08B-F102 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 120A TO-220-3 Original PDF

    FDP027N08B_F102 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDP027N08

    Abstract: FDP027N08B 200A battery charger
    Text: FDP027N08B_F102 N-Channel PowerTrench MOSFET 80V, 223A, 2.7mΩ Features Description • RDS on = 2.21mΩ ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF

    Diode Marking C3

    Abstract: FDP027N08B_F102
    Text: FDP027N08B_F102 N-Channel PowerTrench MOSFET 80 V, 223 A, 2.7 mΩ Features Description • RDS on = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild ® ® Semiconductor ’s advanced PowerTrench process that has


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP027N08B N-Channel PowerTrench MOSFET 80 V, 223 A, 2.7 mΩ Features Description • RDS on = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior


    Original     		PDF FDP027N08B