FDMS7678 Search Results
FDMS7678 Price and Stock
onsemi FDMS7678MOSFET N-CH 30V 17.5A/26A 8PQFN |
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FDMS7678 | Cut Tape | 2,900 | 1 |
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FDMS7678 | Reel | 19 Weeks | 3,000 |
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FDMS7678 | 76,277 |
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FDMS7678 | Cut Tape | 1,672 | 1 |
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FDMS7678 |
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FDMS7678 | 1 |
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FDMS7678 | 3,000 |
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FDMS7678 | 19 Weeks | 3,000 |
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FDMS7678 | 20 Weeks | 3,000 |
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FDMS7678 | 21 Weeks | 3,000 |
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FAIRCHILD FDMS7678Trans MOSFET N-CH 30V 17.5A 8-Pin Power 56 T/R |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMS7678 | 1,200 | 750 |
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Fairchild Semiconductor Corporation FDMS7678Power Field-Effect Transistor, 17.5A, 30V, 0.0055ohm, N-Channel, MOSFET, MO-240AA |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMS7678 | 1,200 | 1 |
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FDMS7678 | 14,600 |
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FDMS7678 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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FDMS7678 |
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FETs - Single, Discrete Semiconductor Products, MOSF N CH 30V 17.5A POWER56 | Original |
FDMS7678 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FDMS7678 N-Channel Power Trench MOSFET 30 V, 26 A, 5.5 mΩ Features General Description ̈ Max rDS on = 5.5 mΩ at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This |
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FDMS7678 | |
Contextual Info: FDMS7678 N-Channel Power Trench MOSFET 30 V, 26 A, 5.5 mΩ Features General Description Max rDS on = 5.5 mΩ at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This |
Original |
FDMS7678 FDMS7678 |