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    FDMS3606AS Search Results

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    FDMS3606AS Price and Stock

    onsemi FDMS3606AS

    MOSFET 2N-CH 30V 13A/27A POWER56
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    DigiKey () FDMS3606AS Cut Tape 1
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    FDMS3606AS Digi-Reel 1
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    FDMS3606AS Reel
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    Avnet Americas () FDMS3606AS Reel 0 Weeks, 2 Days 705
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    FDMS3606AS Reel 111 Weeks 3,000
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    EBV Elektronik FDMS3606AS 143 Weeks 3,000
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    Flip Electronics FDMS3606AS 32,260
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    Rochester Electronics LLC FDMS3606AS

    MOSFET 2N-CH 30V 13A/27A 8PQFN
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    DigiKey FDMS3606AS Bulk 208
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    FLIP ELECTRONICS FDMS3606AS

    MOSFET 2N-CH 30V 13A/27A POWER56
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    DigiKey FDMS3606AS Reel 1,000
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    FAIRCHILD FDMS3606AS

    Trans MOSFET N-CH Si 30V 13A/27A 8-Pin Power 56 T/R
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    Verical () FDMS3606AS 6,000 216
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    FDMS3606AS 1,184 216
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    Fairchild Semiconductor Corporation FDMS3606AS

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    Bristol Electronics FDMS3606AS 2,589
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    Rochester Electronics FDMS3606AS 7,184 1
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    ComSIT USA FDMS3606AS 3,000
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    Vyrian FDMS3606AS 14,012
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    FDMS3606AS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDMS3606AS
    Fairchild Semiconductor FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH 30V DUAL POWER56 Original PDF

    FDMS3606AS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    N9CC

    Abstract: FDMS3606AS 150 mh inductor
    Contextual Info: FDMS3606AS PowerTrench Power Stage 30 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original
    FDMS3606AS FDMS3606AS N9CC 150 mh inductor PDF

    FDMS3606AS

    Contextual Info: FDMS3606AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original
    FDMS3606AS FDMS3606AS PDF

    N9CC

    Contextual Info: FDMS3606AS PowerTrench Power Stage 30 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original
    FDMS3606AS N9CC PDF