1N914
Abstract: M27256 LABLES INFORMATION
Text: M27256 NMOS 256K 32K x 8 UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V
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M27256
170ns
FDIP28W
M27256
1N914
LABLES INFORMATION
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1N914
Abstract: M27256 Electrolytic Capacitors - Quality flowchart
Text: M27256 NMOS 256K 32K x 8 UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V
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M27256
170ns
FDIP28W
M27256
1N914
Electrolytic Capacitors - Quality flowchart
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M27512
Abstract: 1N914
Text: M27512 NMOS 512K 64K x 8 UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V
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M27512
200ns
FDIP28W
M27512
1N914
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M27C64A
Abstract: 1N914 M2764A
Text: M2764A NMOS 64K 8K x 8 UV EPROM FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max 28 TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V
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M2764A
180ns
FDIP28W
M2764A
M27C64A
1N914
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M27C256
Abstract: NM27C256B
Text: M27C256B 256 Kbit 32Kb x 8 UV EPROM and OTP EPROM Feature summary • 5V ± 10% supply voltage in Read operation ■ Access time: 45ns ■ Low power consumption: – Active Current 30mA at 5MHz – Standby Current 100µA 1 u d o FDIP28W (F) ■ Programming voltage: 12.75V ± 0.25V
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M27C256B
FDIP28W
PDIP28
PLCC32
M27C256
NM27C256B
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1N914
Abstract: M2764A M27C64A
Text: M2764A NMOS 64K 8K x 8 UV EPROM FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max 28 TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V
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M2764A
180ns
FDIP28W
M2764A
M27C64A
1N914
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1N914
Abstract: M27256 thomson 7895
Text: M27256 NMOS 256K 32K x 8 UV EPROM FAST ACCESS TIME: 170ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V
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M27256
170ns
FDIP28W
M27256
1N914
thomson 7895
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1N914
Abstract: M27128A
Text: M27128A NMOS 128K 16K x 8 UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5 V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 FDIP28W (F) ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V
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M27128A
200ns
FDIP28W
M27128A
1N914
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1N914
Abstract: M2764A M27C64A M2764AS
Text: M2764A NMOS 64K 8K x 8 UV EPROM FAST ACCESS TIME: 180ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max 28 TTLCOMPATIBLEDURING READ andPROGRAM FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V
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M2764A
180ns
FDIP28W
M2764A
M27C64A
1N914
M2764AS
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1N914
Abstract: M27128A
Text: M27128A NMOS 128K 16K x 8 UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5 V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 FDIP28W (F) ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V
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M27128A
200ns
FDIP28W
M27128A
1N914
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M27512
Abstract: 1N914
Text: M27512 NMOS 512K 64K x 8 UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V
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M27512
200ns
FDIP28W
M27512
1N914
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ST M27C256B
Abstract: M27C256B PDIP28 PDIP32 PLCC32
Text: M27C256B 256 Kbit 32Kb x 8 UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte
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M27C256B
M27C256Bis
FDIP28W
ST M27C256B
M27C256B
PDIP28
PDIP32
PLCC32
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1N914
Abstract: M2764A M27C64A
Text: M2764A NMOS 64 Kbit 8Kb x 8 UV EPROM NOT FOR NEW DESIGN • FAST ACCESS TIME: 180ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 35mA max ■ TTL COMPATIBLE DURING READ and PROGRAM ■ FAST PROGRAMMING ALGORITHM ■
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M2764A
180ns
M2764A
M27C64A
1N914
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11PROGRAMMING
Abstract: 4606 IC circuit diagram ad 4606 m27c512 PLCC32 J-STD-020B M27C512 PDIP28 PLCC32 EPROM M27C512
Text: M27C512 512 Kbit 64K x8 UV EPROM and OTP EPROM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V
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M27C512
FDIP28W
PDIP28
PLCC32
TSOP28
11PROGRAMMING
4606 IC circuit diagram
ad 4606
m27c512 PLCC32
J-STD-020B
M27C512
PDIP28
PLCC32
EPROM M27C512
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TSOP40 Flash
Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Text: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS
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M2716
M2732A
M2764A
M27128A
M27256
M27512
450ns,
TSOP40 Flash
m48z32y
M27V512
FDIP24W
M27128A
M2716
M27256
M2732A
M27512
M2764A
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MK48T87B24
Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
Text: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W
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M27C64A-15F1
M27C64A-20F1
M27C64A-25F1
M27C64A-30F1
M27C64A-20F6
M27C64A-25F6
M27C64A-30F6
ST16601
ST16F48
ST16SF48
MK48T87B24
ST24C02CB1
MK48T18B15
M48Z32Y-100PC1
M2764AF1
MK48Z02B-20
MKI48Z12B15
ST24C01CB1
MK48Z02B-25
ST24C16CM1TR
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Untitled
Abstract: No abstract text available
Text: 52E D H = 7 *7fn • 7=^237 S C S -1 H O M S O N L' Iiu r a m « D037Sbb OTT ■ SGTH s fi ^ hohson M 27C512 CMOS 512K 64K x 8 UV EPROM and OTP ROM ■ VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION:
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D037Sbb
27C512
M27C512
FDIP28W
PDIP28
PLCC32
PTS028
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Untitled
Abstract: No abstract text available
Text: /T T SGS'THOMSON ^ 7 # G fflD IIM ilL IO T M O IS i M 2 7 V 256 LOW VOLTAGE 256K 32K x 8 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 90ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|jA
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M27V256
M27C256B
TSOP28
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Untitled
Abstract: No abstract text available
Text: 5 7 . SGS-THOMSON M87C257 IM 0 ffi ô [SHIgM ( ô ) IM H ( 5 g AD D RESS LATCHED 256K (32K x 8) UV EPROM and OTP ROM • INTEGRATED ADDRESS LATCH ■ VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS’ CONSUMPTION:
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M87C257
FDIP28W
PLCC32
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Untitled
Abstract: No abstract text available
Text: SGS-1H0 M S0 N A 7 M . [» iS m ifg M M t g M 87C 257 ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM • INTEGRATED ADDRESS LATCH ■ FAST ACCESS TIME: 45ns ■ LOW POWER “CMOS" CONSUMPTION: - Active Current 30mA - Standby Current 100(iA ■ PROGRAMMING VOLTAGE: 12.75V
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M87C257
PLCC32
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Untitled
Abstract: No abstract text available
Text: /T T SGS'THOMSON ^ 7 # G fflD IIM ilLIO T M O IS i M 2 7V 5 12 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 90ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|jA
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M27V512
M27C512
TSOP28
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON Q g^(ô g[L[l TO(Q)iQ©S M27C256B 256K (32K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE - LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA - Standby Current 10OjiA
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M27C256B
10OjiA
M27C256B
TSOP28
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ST62T65BM
Abstract: ST62E60/T60
Text: ST62E60B, T60B ST62E65B, T65B SGS-THOMSON 8-BIT OTP/EPROM HCMOS MCUs WITH A/D CONVERTER, EEPRQM & AUTORELOAD TIMER PRELIMINARY DATA 3.5 to 6.0V Supply Operating Range 8 MHz M aximum Clock Frequency -40 to +85°C Operating Tem perature Range Run, W ait & Stop Modes
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ST62E60B,
ST62E65B,
PDIP20
PDIP28
PS020
PS028
PDIP20,
ST62T60B)
PDIP28,
ST62T65B)
ST62T65BM
ST62E60/T60
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Untitled
Abstract: No abstract text available
Text: _M27V256 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION: - Active Current 10mA at 5MHz - Standby Current 10|j,A ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V
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M27V256
10Ojos/byte
FDIP28W
PDIP28
PLCC32
TSOP28
M27V256
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