marking 2P
Abstract: FDG332PZ SC70-6 FDG332PZ marking
Text: FDG332PZ tm P-Channel PowerTrench MOSFET -20V, -2.6A, 97m: Features General Description Max rDS on = 95m: at VGS = -4.5V, ID = -2.6A This P-Channel MOSFET uses Fairchild’s advanced low voltage PowerTrench® process. It has been optimized for battery power management applications.
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FDG332PZ
SC70-6
marking 2P
FDG332PZ
SC70-6
FDG332PZ marking
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FDG332PZ
Abstract: SC70-6
Text: FDG332PZ tm P-Channel PowerTrench MOSFET -20V, -2.6A, 97mΩ Features General Description Max rDS on = 95mΩ at VGS = -4.5V, ID = -2.6A This P-Channel MOSFET uses Fairchild’s advanced low voltage PowerTrench® process. It has been optimized for battery power management applications.
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Original
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FDG332PZ
SC70-6
FDG332PZ
SC70-6
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Untitled
Abstract: No abstract text available
Text: FDG332PZ tm P-Channel PowerTrench MOSFET -20V, -2.6A, 97m: Features General Description Max rDS on = 95m: at VGS = -4.5V, ID = -2.6A This P-Channel MOSFET uses Fairchild’s advanced low voltage PowerTrench® process. It has been optimized for battery power management applications.
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Original
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FDG332PZ
SC70-6
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PDF
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