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    Diodes Incorporated FCX605TA

    TRANS NPN DARL 120V 1A SOT89-3
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    DigiKey FCX605TA Reel 55,000 1,000
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    Diodes Incorporated FCX619TA

    TRANS NPN 50V 3A SOT89-3
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    DigiKey FCX619TA Cut Tape 26,437 1
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    FCX619TA Digi-Reel 26,437 1
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    FCX619TA Reel 24,000 1,000
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    Mouser Electronics FCX619TA 8,040
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    Arrow Electronics FCX619TA 22,850 403
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    FCX619TA 1,000 8 Weeks 1,000
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    FCX619TA Cut Strips 766 8 Weeks 258
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    Avnet Asia FCX619TA 8 Weeks 2,000
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    Win Source Electronics FCX619TA 61,354
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    Diodes Incorporated FCX658ATA

    TRANS NPN 400V 0.5A SOT89-3
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    DigiKey FCX658ATA Cut Tape 18,941 1
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    FCX658ATA Digi-Reel 18,941 1
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    FCX658ATA Reel 18,000 1,000
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    Mouser Electronics FCX658ATA 3,214
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    Arrow Electronics FCX658ATA 1,000 8 Weeks 1,000
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    FCX658ATA 119 1
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    Newark FCX658ATA Cut Tape 920 5
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    Quest Components FCX658ATA 376
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    Avnet Asia FCX658ATA 8 Weeks 1,000
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    New Advantage Corporation FCX658ATA 43,000 1
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    Diodes Incorporated FCX688BTA

    TRANS NPN 12V 3A SOT89-3
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    DigiKey FCX688BTA Cut Tape 1,990 1
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    FCX688BTA Digi-Reel 1,990 1
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    FCX688BTA Reel 1,000 1,000
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    Avnet Americas FCX688BTA Reel 8 Weeks 1,000
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    Mouser Electronics FCX688BTA 1,267
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    Bristol Electronics FCX688BTA 187
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    Win Source Electronics FCX688BTA 41,000
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    Diodes Incorporated FCX617TA

    TRANS NPN 15V 3A SOT89-3
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    DigiKey FCX617TA Cut Tape 1,827 1
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    FCX617TA Digi-Reel 1,827 1
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    Avnet Americas FCX617TA Reel 8 Weeks 1,000
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    Mouser Electronics FCX617TA 990
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    Avnet Asia FCX617TA 8 Weeks 2,000
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    FCX6 Datasheets (45)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FCX604 Zetex Semiconductors High Gain Transistors / High Performance Switching Transistors / Darlingtons Scan PDF
    FCX605 Zetex Semiconductors 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR Original PDF
    FCX605TA Zetex Semiconductors 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR Original PDF
    FCX617 Diodes Incorporated SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR Original PDF
    FCX617 Kexin Switching Transistor Original PDF
    FCX617 TY Semiconductor Switching Transistor - SOT-89 Original PDF
    FCX617 Zetex Semiconductors NPN SILICON POWER (SWITCHING) TRANSISTOR Original PDF
    FCX617TA Zetex Semiconductors TRANS GP BJT NPN 15V 3A 4SOT89 T/R Original PDF
    FCX619 Diodes Incorporated 50V NPN LOW SATURATION POWER TRANSISTOR IN SOT89 Original PDF
    FCX619 Kexin NPN Silicon Power Switching Transistor Original PDF
    FCX619 TY Semiconductor NPN Silicon Power Switching Transistor - SOT-89 Original PDF
    FCX619 Zetex Semiconductors SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR Original PDF
    FCX619 Zetex Semiconductors SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR Original PDF
    FCX619QTA Diodes PWR LOW SAT TRANSISTOR SOT89 T&R Original PDF
    FCX619TA Diodes Incorporated Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR NPN 50V 3A SOT-89 Original PDF
    FCX61K0J Meggitt CGS High Power Resistors wirewound pluggable Original PDF
    FCX61K0K Meggitt CGS High Power Resistors wirewound pluggable Original PDF
    FCX61R0J Meggitt CGS High Power Resistors wirewound pluggable Original PDF
    FCX61R0K Meggitt CGS High Power Resistors wirewound pluggable Original PDF
    FCX649 Zetex Semiconductors High Gain Transistors / High Performance Switching Transistors / Darlingtons Scan PDF

    FCX6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification FCX658A Features 400 Volt VCEO 0.5 Amp continuous current Ptot=1 Watt Optimised hfe characterised upto 200mA Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO 400 V Collector-Emitter Voltage


    Original
    PDF FCX658A 200mA 100mA, 200mA, 100mA 20MHz -20mA

    NPN SOT23-6

    Abstract: ZDT1049 DUAL NPN SOT23-6 zdt6790 fzt849 WDFN3 BCP6825 ZXTBM322 sot223 transistor sot23
    Text: Zetex Device BCP6825 BCP6925 BCV27 BCW66H BCW68H BCX17 BCX19 BCX6825 BCX6916 BCX6925 FCX1047A FCX1051A FCX1147A FCX1149A FCX1151A FCX491A FCX589 FCX591A FCX617 FCX619 FCX688B FCX690B FCX717 FCX718 FCX789A FCX790A FMMT449 FMMT489 FMMT491A FMMT549 FMMT549A FMMT589


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    PDF BCP6825 BCP6925 BCV27 BCW66H BCW68H BCX17 BCX19 BCX6825 BCX6916 BCX6925 NPN SOT23-6 ZDT1049 DUAL NPN SOT23-6 zdt6790 fzt849 WDFN3 BCP6825 ZXTBM322 sot223 transistor sot23

    100 Amp current 1300 volt diode

    Abstract: FCX690B FCX790A 40X40X0 DSA003687
    Text: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX690B ISSSUE 1 - MARCH 1999 FEATURES * 2W POWER DISSIPATION * * * 6A Peak Pulse Current Gain of 400 @IC=1Amp Very Low Saturation Voltage Complimentary Type Partmarking Detail - C E FCX790A 690 C B ABSOLUTE MAXIMUM RATINGS.


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    PDF FCX690B FCX790A 100ms 100 Amp current 1300 volt diode FCX690B FCX790A 40X40X0 DSA003687

    FCX619

    Abstract: FCX720 PARTMARKING 619 FCX619 equivalent
    Text: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX619 ISSUE 6 - JANUARY 2003 FEATURES * 2W POWER DISSIPATION * * * * * 6A PEAK PULSE CURRENT EXCELLENT hFE CHARACTERISTICS UP TO 6 Amps EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ. EXTREMELY LOW EQUIVALENT ON-RESISTANCE;


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    PDF FCX619 FCX720 100mA* 200mA, 100MHz FCX619 FCX720 PARTMARKING 619 FCX619 equivalent

    Untitled

    Abstract: No abstract text available
    Text: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX617 ISSSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 12A Peak Pulse Current Excellent HFE Characteristics up to 12 Amps Extremely Low Saturation Voltage E.g. 8mv Typ. Extremely Low Equivalent On-resistance;


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    PDF FCX617 100mA 100ms 100us

    Untitled

    Abstract: No abstract text available
    Text: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX688B ISSSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage Complimentary Type Partmarking Detail -


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    PDF FCX688B FCX789A 100ms 100us

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification FCX619 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 amps. Extremely low saturation voltage E.g. 13mv Typ. Extremely low equivalent on-resistance. RCE sat 87mÙ at 2.75A.


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    PDF FCX619 100mA 200mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification FCX617 SOT-89 Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 Excellent HFE characteristics up to 12 amps. Extremely low saturation voltage E.g. 8mv Typ. +0.1 0.53-0.1 +0.1 0.48-0.1 RCE sat 50mÙ at 3A.


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    PDF FCX617 OT-89 200mA 50MHz

    smd marking 619

    Abstract: npn smd 2a transistor smd 6a MARKING SMD npn TRANSISTOR 1a FCX619 transistor marking 6A 6a smd transistor
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FCX619 Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics up to 6 amps. Extremely low saturation voltage E.g. 13mv Typ. Extremely low equivalent on-resistance. RCE sat 87mÙ at 2.75A.


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    PDF FCX619 100mA 200mA 100MHz smd marking 619 npn smd 2a transistor smd 6a MARKING SMD npn TRANSISTOR 1a FCX619 transistor marking 6A 6a smd transistor

    MARKING SMD npn TRANSISTOR 1a

    Abstract: smd transistor marking br MARKING SMD npn TRANSISTOR 690 transistor Ic 1A datasheet NPN transistor smd 6a 9v smd transistor npn smd 2a smd transistor MARKING 2A npn SMD TRANSISTOR MARKING 2A smd transistor marking 1A
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FCX690B Features 2W power dissipation. 6A peak pulse current. Gain of 400 @IC=1Amp. Very low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage


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    PDF FCX690B 100mA 50MHz 500mA, MARKING SMD npn TRANSISTOR 1a smd transistor marking br MARKING SMD npn TRANSISTOR 690 transistor Ic 1A datasheet NPN transistor smd 6a 9v smd transistor npn smd 2a smd transistor MARKING 2A npn SMD TRANSISTOR MARKING 2A smd transistor marking 1A

    Untitled

    Abstract: No abstract text available
    Text: FCX692B Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)70 I(C) Max. (A)2 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400 h(FE) Max. Current gain.


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    PDF FCX692B Freq150M StyleSOT-89 Code3-12

    Untitled

    Abstract: No abstract text available
    Text: FCX696B Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)200m


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    PDF FCX696B Freq70M

    Untitled

    Abstract: No abstract text available
    Text: FCX694B Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.500 h(FE) Max. Current gain.


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    PDF FCX694B Freq130M StyleSOT-89 Code3-12

    Untitled

    Abstract: No abstract text available
    Text: FCX690B Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)2 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400 h(FE) Max. Current gain.


    Original
    PDF FCX690B Freq150M StyleSOT-89 Code3-12

    Untitled

    Abstract: No abstract text available
    Text: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX690B ISSSUE 1 - MARCH 1999 FEATURES * 2W POWER DISSIPATION * * * 6A Peak Pulse Current Gain of 400 @IC=1Amp Very Low Saturation Voltage Complimentary Type Partmarking Detail - C E FCX790A 690 C B ABSOLUTE MAXIMUM RATINGS.


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    PDF FCX690B FCX790A 100ms

    Untitled

    Abstract: No abstract text available
    Text: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX619 ISSUE 6 - JANUARY 2003 FEATURES * 2W POWER DISSIPATION * * * * * 6A PEAK PULSE CURRENT EXCELLENT hFE CHARACTERISTICS UP TO 6 Amps EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ. EXTREMELY LOW EQUIVALENT ON-RESISTANCE;


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    PDF FCX619 FCX720 100mA* 200mA, 100MHz

    FCX658A

    Abstract: ic marking 57
    Text: Transistors SMD Type NPN Silicon Planar Medium Power High Voltage Transistor FCX658A Features 400 Volt VCEO 0.5 Amp continuous current Ptot=1 Watt Optimised hfe characterised upto 200mA Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage


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    PDF FCX658A 200mA 100mA, 100mA 200mA, 20MHz FCX658A ic marking 57

    ztx605

    Abstract: FCX605 FCX605TA SOT223
    Text: FCX605 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1V; IC= 1A DESCRIPTION This new NPN Darlington transistor provides users with very efficeint performance combining low VCE (sat) and very high Hfe to give extremely low


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    PDF FCX605 OT223 ztx605 FCX605 FCX605TA SOT223

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification FCX690B Features 2W power dissipation. 6A peak pulse current. Gain of 400 @IC=1Amp. Very low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 45 V Collector-emitter voltage


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    PDF FCX690B 100mA 50MHz 500mA,

    fcx720

    Abstract: PARTMARKING 619 FCX619 DSA003686
    Text: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX619 ISSUE 5 - SEPTEMBER 1999 FEATURES * 2W POWER DISSIPATION * * * * * 6A PEAK PULSE CURRENT EXCELLENT hFE CHARACTERISTICS UP TO 6 Amps EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ. EXTREMELY LOW EQUIVALENT ON-RESISTANCE;


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    PDF FCX619 FCX720 Dissip00mA* 200mA, 100MHz fcx720 PARTMARKING 619 FCX619 DSA003686

    Untitled

    Abstract: No abstract text available
    Text: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX617 ISSSU E 1 - NOVEMBER 1998 FEATU RES * 2W POWER D IS S IP A T IO N * * * * 12A Peak Pu lse Current Exce lle n t H FE C h a ra cte ristics up to 12 A m p s Extre m e ly Lo w S a tu ra tio n V o lta ge E.g. 8 m v T y p .


    OCR Scan
    PDF FCX617

    FCX749

    Abstract: 3emitter bst52 FCX688B FCX689B FCX690B FCX692B FCX694B FCX696B FCX789A
    Text: SOT89 HIGH GAIN TRANSISTORS Pinout: 1-Base, 2&4-Collector, 3-Emitter v CE say Max h :E Type v CBO V v CEO V ^C(cont mA mW FCX696B 250 FCX694B 120 250 500 1500 120 500 1500 FCX692B FCX690B 70 70 2000 1500 400/- 45 45 2000 1500 400/- FCX689B 20 20 3000 1500


    OCR Scan
    PDF FCX696B FCX694B FCX692B FCX690B FCX689B FCX688B FCX796A FCX795A FCX792A -500/ctor, FCX749 3emitter bst52 FCX789A

    FCX653

    Abstract: No abstract text available
    Text: FCX653 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES * FAST SWITCHING. * LOW SATURATION VOLTAGE. * H fe UP TO 6A PULSED. * 2A Ic CONTINUOUS. * COM PLEMENTARY TYPE - FCX753. PARTMARKING DETAILS - N8 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage


    OCR Scan
    PDF FCX753. FCX653 100mA 500mA, 100mA, 100MHz 300fxs. DS149 FCX653

    FCX749

    Abstract: No abstract text available
    Text: FCX749 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FEATU RES * * * F A S T SW ITCH IN G . LO W SA T U R A T IO N V O LTA G E . H fe UP TO 6A P U LSED . * * 2 A lc CO N TIN U O U S. CO M P LEM EN TA R Y T Y P E - FCX649. PARTM ARKIN G D E T A ILS - N6


    OCR Scan
    PDF FCX749 FCX649. -100mA* -200mA -100m -50mA, -100mA, 100MHz -500mA, 000fi325 FCX749