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    FLM64724F

    Abstract: No abstract text available
    Text: FLM6472-4F C-Band Internally FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 36% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package


    Original     		PDF FLM6472-4F -46dBc FLM6472-4F FCSI0999M200 FLM64724F

    108 to 174 mhz

    Abstract: FLM7179-4F
    Text: FLM7179-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 35% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM7179-4F -46dBc FLM7179-4F FCSI0999M200 108 to 174 mhz

    FHX04

    Abstract: FHX04X FHX05X FHX06X hemt low noise die
    Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility


    Original     		PDF FHX04X, FHX05X, FHX06X 12GHz FHX04) FHX06X 2-18GHz FHX04 FHX04X FHX05X hemt low noise die

    FUJITSU MMIC LNA

    Abstract: FMM5701LG lg s12 mmic case styles 26GHz LNA fmm5701
    Text: FMM5701LG LNA MMIC FEATURES • Low Noise Figure: NF=1.6dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-24GHz • LG package for SMT Applications DESCRIPTION The FMM5701LG is a LNA MMIC designed for applications in the


    Original     		PDF FMM5701LG 24GHz 18-24GHz FMM5701LG 18-24GHz FCSI0999M200 FUJITSU MMIC LNA lg s12 mmic case styles 26GHz LNA fmm5701

    diode Free 18-24GHz

    Abstract: FMM5701LG FUJITSU MMIC LNA
    Text: FMM5701LG LNA MMIC FEATURES • Low Noise Figure: NF=1.6dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-24GHz • LG package for SMT Applications DESCRIPTION The FMM5701LG is a LNA MMIC designed for applications in the


    Original     		PDF FMM5701LG 24GHz 18-24GHz FMM5701LG 18-24GHz FCSI0999M200 diode Free 18-24GHz FUJITSU MMIC LNA

    FLM6472-4F

    Abstract: No abstract text available
    Text: FLM6472-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM6472-4F -46dBc FLM6472-4F FCSI0999M200

    Untitled

    Abstract: No abstract text available
    Text: FLM7179-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: hadd = 35% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM7179-4F -46dBc FLM7179-4F FCSI0999M200

    FHX04X

    Abstract: fujitsu hemt GaAs FET HEMT Chips hemt low noise die FHX04 FHX05X FHX06X FET transistors with s-parameters FUJITSU AU GM 90 562 573
    Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility


    Original     		PDF FHX04X, FHX05X, FHX06X 12GHz FHX04) FHX06X 2-18GHz FHX04X fujitsu hemt GaAs FET HEMT Chips hemt low noise die FHX04 FHX05X FET transistors with s-parameters FUJITSU AU GM 90 562 573

    FLM6472-4F

    Abstract: No abstract text available
    Text: FLM6472-4F C-Band Internally FEATURES • • • • • • • High Output Power: P ^ b = 36.5dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 36% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF -46dBc FLM6472-4F FLM6472-4F FCSI0999M200

    FLM7179-4F

    Abstract: 323CL 3852 r
    Text: FLM7179-4F - C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 36.5dBm Typ. High Gain: G ^ b = 9.0dB (Typ.) High PAE: r iadd = 35% (Typ.) Low IM 3 = -46dBc@Po = 25.5dBm


    OCR Scan     		PDF -46dBc FLM7179-4F FLM7179-4F FCSI0999M200 323CL 3852 r