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    ITT Interconnect Solutions MKJ4A1Z6-6FC-K140

    IN-LINE RECEPTACLE, BANDED , SOL
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    DigiKey MKJ4A1Z6-6FC-K140 Bag 99 1
    • 1 $140.87
    • 10 $114.858
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    Avnet Americas MKJ4A1Z6-6FC-K140 Bulk 23 Weeks 25
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    • 100 $95.758
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    Mouser Electronics MKJ4A1Z6-6FC-K140 24
    • 1 $151.75
    • 10 $132.33
    • 100 $112.77
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    Interstate Connecting Components MKJ4A1Z6-6FC-K140
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    Master Electronics MKJ4A1Z6-6FC-K140
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    ITT Interconnect Solutions MKJ4B1Z6-6FC-K140

    IN-LINE RECEPTACLE, ACCESSORYTHR
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    DigiKey MKJ4B1Z6-6FC-K140 Bag 50 1
    • 1 $173.34
    • 10 $141.331
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    Avnet Americas MKJ4B1Z6-6FC-K140 Bulk 23 Weeks 25
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    Mouser Electronics MKJ4B1Z6-6FC-K140 12
    • 1 $161.02
    • 10 $149.19
    • 100 $142.76
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    Interstate Connecting Components MKJ4B1Z6-6FC-K140
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    Master Electronics MKJ4B1Z6-6FC-K140
    • 1 -
    • 10 $322.67
    • 100 $130.21
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    Vishay Cera-Mite 562RX5FCK102EE102K

    CAP CER 1000PF 1KV X5F RADIAL
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    Fluke Corporation FLK-A3001 FC KIT

    Digital Multimeters FC WIRELESS BASIC KIT WITH I3000
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics FLK-A3001 FC KIT 2
    • 1 $588.94
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    • 100 $588.94
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    Siemens FCK610

    Switch Contact Blocks / Switch Kits H FUSE KIT FOR MCS SW 600V 100A
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    Mouser Electronics FCK610 1
    • 1 $245.16
    • 10 $245.16
    • 100 $237.3
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    FCK 1 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FCK101 Mullard FC Family DTL Integrated Circuits 1969 Scan PDF
    FCK102 Mullard FC Family DTL Integrated Circuits 1969 Scan PDF

    FCK 1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: . IBM13M64734CCA 64M x 72 2-Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 64Mx72 Synchronous DRAM DIMM • Performance: -260 Device Latency fCK Clock Frequency tAC Clock Access Time 2 -360 -360 Units


    Original
    IBM13M64734CCA 168-Pin 64Mx72 66/100MHz PC100 09K3884 F38744 PDF

    NT1GC72B89A0NF

    Abstract: 128MX8 nanya 2gb DDR3 DIMM NT2GC72B8PA0NF-CG ddr3 PCB footprint NT2GC72B8PA0NF Nanya DDR3 DDR3 DIMM footprint DDR3 udimm jedec PC3-10600
    Text: NT1GC72B89A0NF / NT2GC72B8PA0NF NT1GC72B89A1NF / NT2GC72B8PA1NF 1GB: 128M x 72 / 2GB: 256M x 72 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3-1066/1333 128Mx8 SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency


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    NT1GC72B89A0NF NT2GC72B8PA0NF NT1GC72B89A1NF NT2GC72B8PA1NF PC3-8500 PC3-10600 DDR3-1066/1333 128Mx8 PC3-8500 nanya 2gb DDR3 DIMM NT2GC72B8PA0NF-CG ddr3 PCB footprint NT2GC72B8PA0NF Nanya DDR3 DDR3 DIMM footprint DDR3 udimm jedec PC3-10600 PDF

    IBMN364164

    Abstract: IBMN364804 IBMN364164CT3C-68 IBMN364404 IBMN364164CT3C-360
    Text: . IBMN364164 IBMN364804 IBMN364404 64Mb Synchronous DRAM - Die Revision C Features • Programmable Wrap: Sequential or Interleave • High Performance: -68 -75A, -260, -360, Units CL=3 CL=3 CL=2 CL=3 fCK Clock Frequency 150 133 100 100 MHz tCK Clock Cycle


    Original
    IBMN364164 IBMN364804 IBMN364404 19L3265 E35856B IBMN364804 IBMN364164CT3C-68 IBMN364404 IBMN364164CT3C-360 PDF

    marking code EY SMD

    Abstract: PC100-222-620 P-TSOPII-54
    Text: HYB39L256160AC/T 256MBit 3.3V Mobile-RAM 256 MBit Synchronous Low-Power DRAM Data Sheet Revision Dec. 2002 • Automatic and Controlled Precharge Command Features -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and full page tCK3,MIN


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    HYB39L256160AC/T 256MBit 16Mbit P-TFBGA-54, PC133 SPT03919-3 marking code EY SMD PC100-222-620 P-TSOPII-54 PDF

    Untitled

    Abstract: No abstract text available
    Text: M2F2G64CB88G7N / M2F4G64CB8HG5N 2GB: 256M x 64 / 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Based on DDR3-1333/1600 256Mx8 SDRAM G-Die Features •Performance: PC3-10600 PC3-12800 -CG -DI DIMM CAS Latency 9 11 fck – Clock Freqency 667


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    M2F2G64CB88G7N M2F4G64CB8HG5N PC3-10600 PC3-12800 DDR3-1333/1600 256Mx8 PC3-10600 240-Pin 256Mx64 PDF

    ISO 2768-mk

    Abstract: PC100-222-620 HYB 39L128160AC-7.5
    Text: HYB 39L128160AC/T 128-MBit 3.3V Mobile-RAM 128-MBit Synchronous Low-Power DRAM Datasheet Rev. 12/01 • Automatic and Controlled Precharge Command High Performance: -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and full page


    Original
    39L128160AC/T 128-MBit 54-FBGA SPT03933 ISO 2768-mk PC100-222-620 HYB 39L128160AC-7.5 PDF

    Untitled

    Abstract: No abstract text available
    Text: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Features • High Performance: CAS latency = 2 fCK Clock Frequency tCK2 Clock Cycle tAC2 Clock Access Time


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    0316409C 0316169C 0316809C 1Mx16 16Mbit -12ns 545-DRAM; PDF

    39S256160DT-7

    Abstract: HYB 39S256160DT-7.5 PC100-222 PC133-222 P-TSOPII-54 P-TSOP-54-2
    Text: HYB39S256400/800/160DT L /DC(L) 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -6 -7 -7.5 -8 Units • Data Mask for Read / Write control (x4, x8) • Data Mask for byte control (x16) • Auto Refresh (CBR) and Self Refresh fCK 166


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    HYB39S256400/800/160DT 256MBit P-TSOPII-54 400mil P-TSOPII-54 GPX09039 TFBGA-54 39S256160DT-7 HYB 39S256160DT-7.5 PC100-222 PC133-222 P-TSOP-54-2 PDF

    0364404CT3C

    Abstract: 0364164PT3C-10 0364804CT3C 0364164PT3C-360 03644B 0364804CT3C-260 0364804PT3C-10 0364804CT3C-360
    Text: IBM0364404 IBM0364804 IBM0364164 IBM03644B4 Advanced 64Mb Synchronous DRAM - Die Revision C Features • Multiple Burst Read with Single Write Option • Automatic and Controlled Precharge Command • High Performance: fcK I Clock Frequency -80, C L= 3 | 125


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    IBM0364404 IBM0364804 IBM0364164 IBM03644B4 cycles/64ms 39-page 49-page 0364404CT3C 0364164PT3C-10 0364804CT3C 0364164PT3C-360 03644B 0364804CT3C-260 0364804PT3C-10 0364804CT3C-360 PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM0364804 IBM0364164 IBM0364404 IBM03644B4 64Mb Synchronous DRAM - Die Revision C Features • Programmable Wrap: Sequential or Interleave • High Performance: -75A, : -260, : -360, : -1 0 , : . . : CL=3 : CL=2 ; CL=3 ; CL=3 ; Unlts : ! 1 00 : fCK : Clock Frequency


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    IBM0364804 IBM0364164 IBM0364404 IBM03644B4 PDF

    11-CQ2

    Abstract: No abstract text available
    Text: IBM13N4649JC IBM13N4739JC PRELIMINARY 4M X 64/72 2 Bank Unbuffered SDRAM Module Features • 168 Pin emerging JEDEC Standard, Unbuffered Byte Dual In-line Memory Module • 4Mx64/72 Synchronous DRAM DIMM • Performance: CAS Latency fcK Clock Frequency tcK


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    IBM13N4649JC IBM13N4739JC 4Mx64/72 11-CQ2 PDF

    Untitled

    Abstract: No abstract text available
    Text: -Preliminary IBM0364404IBM03644B4 PC133 Synchronous DRAM - 64Mb Revision B Features • High Performance: -75 A, CL=3 Units fCK Clock Frequency 133 MHz *CK Clock Cycle 7.5 ns *AC 5Clock Access Time 5.4 ns *RP | Precharge Time 22.5 ns *RCD | RAS to CAS Delay


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    IBM0364404IBM03644B4 PC133 IBM0364404 IBM03644B4 400mil; 256Mb PDF

    4715-01

    Abstract: No abstract text available
    Text: IBM13N1649NC IBM13N1809NC Preliminary 1M X 64/80 1 Bank Unbuffered SDRAM Module Features • • 168 Pin emerging JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module 1Mx64/80 Synchronous DRAM DIMM • Performance: CAS Latency fcK tcK Uc Clock Frequency


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    IBM13N1649NC IBM13N1809NC 1Mx64/80 SA14-4715-01 4715-01 PDF

    SEM t11

    Abstract: 39S16800 39S16800AT-8 Q1323 q1333
    Text: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command


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    HYB39S1640x/80x/16xAT-8/-10 16MBit P-TSOPI-44 400mil SEM t11 39S16800 39S16800AT-8 Q1323 q1333 PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM13M64734BCA 64M x 72 1 Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 64Mx72 Synchronous DRAM DIMM • Performance: I DIMM CAS Latency fcKj Clock Frequency ! fcK i Clock Cycle I tftc i Clock Access


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    IBM13M64734BCA 168-Pin 64Mx72 66/100MHz PC100 13M64734BCA PDF

    39S256160T

    Abstract: TSOP54-2 APA10 39S256160T-8 39S256400T-8
    Text: H YB39S25640x/80x/16xT 256MBit Synchronous DRAM SIEMENS 256 MBit Synchronous DRAM Target Information Rev. 0.6 • High Performance: Multiple Burst Operation -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns Automatic Command and Read with Single Controlled


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    YB39S25640x/80x/16xT 256MBit P-TSOPII-54 400mil P-TSOPII-54 400mil, TSOPII-54 TSOP54-2 39S256160T APA10 39S256160T-8 39S256400T-8 PDF

    DQ45-A

    Abstract: 033J1
    Text: IBM13N1649NC IBM13N1809NC 1M x 64/80 1 Bank Unbuffered SDRAM Module Features • 168-Pin JEDEC Standard, Unbuffered 8-Byte Dual In-Line Memory Module • 1Mx64/80 Synchronous DRAM DIMM • Performance: i. CAS Latency : fcK I Clock Frequency itcK i Clock Cycle


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    IBM13N1649NC IBM13N1809NC 168-Pin 1Mx64/80 DQ45-A 033J1 PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM0316409C IBM0316809C IBM0316169C 16Mb Synchronous DRAM Features • High Performance: fcK Clock Frequency • Multiple Burst Read with Single W rite Option -10 CL-3 -12 CL-3 Units ! • Automatic and Controlled Precharge Command 100 83 MHz ! • Data Mask for Read/Write control x4,x8


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    IBM0316409C IBM0316809C IBM0316169C cycles/64ms PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM13M32734BCB 32M x 72 2-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Synchronous DRAM DIMM : -75A I Reg : DIMM CAS Latency : fCK Ha C I: Clock Frequency : ; Units | 4 ; 133 Ì 100 j MHz ! 7.5 i


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    IBM13M32734BCB 168-Pin 32Mx72 PDF

    dq35j

    Abstract: No abstract text available
    Text: IBM13T8644MPE 8M x 64 PC100 SDRAM SO DIMM Preliminary Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 8Mx64 Synchronous DRAM SO DIMM • Performance: PC100 -360 CAS Latency fcK Clock Frequency tcK Clock Cycle *AC | Clock Access Tim e |


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    IBM13T8644MPE 8Mx64 PC100 PC100 dq35j PDF

    RP5020

    Abstract: No abstract text available
    Text: IBM13T4644MPE Preliminary 4M x 64 PC100 SDRAM SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 4Mx64 Synchronous DRAM SO DIMM • Performance: PC100 -360 CAS Latency I Units i 3 fcK i Clock Frequency 100 I MHz


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    IBM13T4644MPE 4Mx64 PC100 PC100 RP5020 PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM13N8739CC 8M x 72 2 Bank Unbuffered SDRAM Module Features • 168 Pin Unbuffered 8 Byte Dual In-line Memory Module • 8Mx72 Synchronous DRAM DIMM • Performance: j 10 j Units! CAS Latency 3 ! fcK I Clock Frequency jtcK j Clock Cycle iUc j Clock Access Time j


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    IBM13N8739CC 8Mx72 PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM13M16734BCB Preliminary 16M x 72 1-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 16Mx72 Synchronous DRAM DIMM -75A R e g . j Units | 4 DIMM CAS Latency • • • • • • • fcK I Clock Frequency


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    IBM13M16734BCB 168-Pin 16Mx72 100MHz 133MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM0364404C Preliminary IBM0364804C IBM0364164C IBM03644B4C 64Mb Synchronous DRAM - Die Revision B Features • Programmable Wrap Sequence: Sequential or Interleave • High Performance: -2 2 2 , C L = 3 I -32 2, C L = 3 I -10 , C L = 3 125 I 125 I 100 fcK i Clock Frequency


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    IBM0364404C IBM0364804C IBM0364164C IBM03644B4C 42ontained PDF