FC8V Search Results
FC8V Price and Stock
Panasonic Electronic Components FC8V22040LMOSFET 2N-CH 24V 8A WMINI8-F1 |
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FC8V22040L | Reel |
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FC8V22040L | Reel | 3,000 |
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FC8V22040L | 9,670 |
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Panasonic Electronic Components FC8V33030LMOSFET 2N-CH 33V 6.5A WMINI8-F1 |
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FC8V33030L | Reel |
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FC8V33030L | 143 Weeks | 3,000 |
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FC8V33030L | 9,637 |
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Silicon Motion Technology Corp SM671PAF-C8VFERRI-UFS BGA 153-B UFS 3D V8 TL |
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SM671PAF-C8V | Bulk | 1 |
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Silicon Motion Technology Corp SM671PEF-C8VFERRI-UFS BGA 153-B UFS 3D V8 TL |
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SM671PEF-C8V | Bulk | 1 |
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Silicon Motion Technology Corp SM671PBF-C8VFERRI-UFS BGA 153-B UFS 3D V8 TL |
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SM671PBF-C8V | Bulk | 1 |
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FC8V Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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FC8V22040L | Panasonic Electronic Components | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 24V 8A WMINI8-F1 | Original | |||
FC8V33030L |
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FETs - Arrays, Discrete Semiconductor Products, MOSFET N CH 33V 6.5A WMINI8 | Original |
FC8V Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Doc No. TT4-EA-14491 Revision. 3 Product Standards MOS FET FC8V22080L FC8V22080L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.9 0.3 8 7 6 5 1 2 3 4 0.16 Features 2.4 2.8 y Low drain-source ON resistance:Rds on typ. = 13 mΩ(VGS = 4.5 V) |
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TT4-EA-14491 FC8V22080L UL-94 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FC8V2204 Silicon N-channel MOS FET For lithium-ion secondary battery protection circuits • Package Overview N-channel dual type MOS FET in a compact surface mount type package. Features |
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2002/95/EC) FC8V2204 | |
Contextual Info: Doc No. TT4-EA-13635 Revision. 3 Product Standards MOS FET FC8V22040L FC8V22040L Gate Resistor installed Dual N-Channel MOS Type Unit: mm 2.9 For lithium-ion secondary battery protection circuit 0.3 8 7 6 5 1 2 3 4 0.16 2.4 2.8 • Features Low drain-source On-state Resistance: |
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TT4-EA-13635 FC8V22040L UL-94 | |
FC8V22090LContextual Info: Doc No. TT4-EA-14490 Revisio n. 2 Product Standards MOS FET FC8V22090L FC8V22090L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.9 0.3 0.16 8 7 6 5 1 2 3 4 • Features 2.4 2.8 Low drain-source ON resistance:Rds on typ. = 9.5 m (VGS = 4.5 V) |
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TT4-EA-14490 FC8V22090L UL-94 FC8V22090L | |
Contextual Info: Doc No. TT4-EA-14952 Revision. 1 Product Standards MOS FET FC8V36060L FC8V36060L Single N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits For load switching 2.9 0.3 8 7 6 5 1 2 3 4 0.16 Features 2.4 2.8 y Low drain-source ON resistance:RDS on typ. = 70 mΩ(VGS = 4.5 V) |
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TT4-EA-14952 FC8V36060L UL-94 | |
FC8V3303Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FC8V3303 Silicon N-channel MOS FET For DC-DC converter circuits • Overview Package FC8V3303 is the N-channel dual type MOSFET which is the most suitable for DC-DC converter circuits. |
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2002/95/EC) FC8V3303 FC8V3303 FC8V33030L | |
Contextual Info: Doc No. TT4-EA-14491 Revisio n. 2 Product Standards MOS FET FC8V22080L FC8V22080L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.9 0.3 0.16 8 7 6 5 1 2 3 4 • Features 2.4 2.8 Low drain-source ON resistance:Rds on typ. = 13 m (VGS = 4.5 V) |
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TT4-EA-14491 FC8V22080L UL-94 | |
Contextual Info: Doc No. TT4-EA-14490 Revision. 3 Product Standards MOS FET FC8V22090L FC8V22090L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.9 0.3 0.16 8 7 6 5 1 2 3 4 Features 2.4 2.8 y Low drain-source ON resistance:Rds on typ. = 9.5 m Ω(VGS = 4.5 V) |
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TT4-EA-14490 FC8V22090L UL-94 | |
Contextual Info: Doc No. TT4-EA-13171 Revision. 2 Product Standards MOS FET FC8V33030L FC8V33030L Dual N-channel MOSFET Unit: mm For switching For DC-DC Converter 2.9 0.3 0.16 8 7 6 5 1 2 3 4 2.4 2.8 • Features Low drain-source On-state Resistance : RDS on typ = 22 m (VGS = 4.5 V) |
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TT4-EA-13171 FC8V33030L UL-94 | |
FC8V22040LContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FC8V2204 Silicon N-channel MOS FET For lithium-ion secondary battery protection circuits • Package Overview N-channel dual type MOS FET in a compact surface mount type package. Features |
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2002/95/EC) FC8V2204 FC8V22040L | |
SAA7119
Abstract: saa7154 RSN 309 W 44H SAA7154H SAA7154E SAA7118 An RTCO 7AH SPLPL9 myson mtv048 SAA7154E/V2
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SAA7154E; SAA7154H SAA7154H 10-bit 24-bit SAA7154E SAA7119 saa7154 RSN 309 W 44H SAA7118 An RTCO 7AH SPLPL9 myson mtv048 SAA7154E/V2 | |
CVBS10
Abstract: smd transistor adp8
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SAF7118H SCA75 753505/01/pp168 CVBS10 smd transistor adp8 | |
SAA7114
Abstract: ad1x Block Diagram of PAL TV transmitter pci slot agv TRANSISTOR BC 327 AI23 LQFP100 SAA7114E SAA7114H SAA7140
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SAA7114 SCA76 R21/02/pp147 SAA7114 ad1x Block Diagram of PAL TV transmitter pci slot agv TRANSISTOR BC 327 AI23 LQFP100 SAA7114E SAA7114H SAA7140 | |
Contextual Info: Doc No. TA4-EA-06224 Revision. 1 Product Standards AN32258A http://www.semicon.panasonic.co.jp/en/ INTEGRATED WIRELESS POWER SUPPLY RECEIVER, Qi WIRELESS POWER CONSORTIUM COMPLIANT FEATURES DESCRIPTION Integrated Wireless Power Receiver Solution WPC Ver. 1.1 Compliant |
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TA4-EA-06224 AN32258A 48easures | |
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philips tea 1091
Abstract: vps14 SAA7108E SAA7109E SAA7140 C9918 BT 2323 AUDIO CONTROLLER PIN DETAILS 216-0236 TFD 2604
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SAA7108E; SAA7109E 16-bit SCA76 R21/02/pp202 philips tea 1091 vps14 SAA7108E SAA7109E SAA7140 C9918 BT 2323 AUDIO CONTROLLER PIN DETAILS 216-0236 TFD 2604 | |
SAF7113H
Abstract: SMD A7H LCR24 QFP44 WST-625 scl 1527 encoder THERMAL Fuse l20 tf 115 c Bar code reader fine line sensor
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SAF7113H SCA76 R21/02/pp81 SAF7113H SMD A7H LCR24 QFP44 WST-625 scl 1527 encoder THERMAL Fuse l20 tf 115 c Bar code reader fine line sensor | |
SAA7115HL
Abstract: saa7115 xs74 p8010 SAA7114 sot407cd5 WSS-525 IC transistor linear handbook
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SAA7115 OT407-1 136E20 MS-026 SAA7115 SAA7115HL xs74 p8010 SAA7114 sot407cd5 WSS-525 IC transistor linear handbook | |
SAF7118H
Abstract: QFP160 SAF7118 SAF7118EH
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SAF7118 SAF7118 SAF7118H QFP160 SAF7118EH | |
V1F diode
Abstract: PNX2000 T010 T020 volume i2c i2c graphic equalizer EPICS-7
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PNX2000 AN10276 PNX2000 REG05 25sses, V1F diode T010 T020 volume i2c i2c graphic equalizer EPICS-7 | |
QFP160
Abstract: adp cv1 SAF7118 SAF7118EH SAF7118H smd transistor A13
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SAF7118 SAF7118 QFP160 adp cv1 SAF7118EH SAF7118H smd transistor A13 | |
sy 171/20
Abstract: adp cv1 LBGA156 QFP160 SAA7118 SAA7118E SAA7118H
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SAA7118 SAA7118 sy 171/20 adp cv1 LBGA156 QFP160 SAA7118E SAA7118H | |
4 pin 22.5792 crystal oscillator
Abstract: xinc2 HPD30 SAA7140 tip 122 mar 933 RS-170-A amplifier CV 203
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SAA7108AE; SAA7109AE 16-bit SCA75 753505/01/pp200 4 pin 22.5792 crystal oscillator xinc2 HPD30 SAA7140 tip 122 mar 933 RS-170-A amplifier CV 203 | |
saa7115hl
Abstract: E 195088 SAA7115 nxp confidential SAA7115HL dimensions sot407cd5 composite rgb SAA7115H smd transistor yc 622 Philips FA 261
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SAA7115 SAA7115 saa7115hl E 195088 nxp confidential SAA7115HL dimensions sot407cd5 composite rgb SAA7115H smd transistor yc 622 Philips FA 261 | |
SAF7118EH
Abstract: SAF7118 QFP160 SAF7118H RGBS to YPbPr
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SAF7118 SCA76 R21/02/pp173 SAF7118EH SAF7118 QFP160 SAF7118H RGBS to YPbPr |