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    FC 0012 Search Results

    FC 0012 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    CO-059BNCX200-012 Amphenol Cables on Demand Amphenol CO-059BNCX200-012 BNC Male to BNC Male (RG59) 75 Ohm Coaxial Cable Assembly (RG59/U Solid) 12ft Datasheet
    CO-058BNCX200-012 Amphenol Cables on Demand Amphenol CO-058BNCX200-012 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 12ft Datasheet
    CO-174BNCX200-012 Amphenol Cables on Demand Amphenol CO-174BNCX200-012 BNC Male to BNC Male (RG174) 50 Ohm Coaxial Cable Assembly 12ft Datasheet
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    FC 0012 Price and Stock

    Rubycon Corporation 16ZLR3900MEFC12.5X25

    Aluminum Electrolytic Capacitors - Radial Leaded 16VDC 3900uF 20%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 16ZLR3900MEFC12.5X25 1,000
    • 1 $2.49
    • 10 $1.62
    • 100 $1.23
    • 1000 $1.01
    • 10000 $1.01
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    Rubycon Corporation 25ZLR1800MEFC12.5X20

    Aluminum Electrolytic Capacitors - Radial Leaded 25VDC 1800uF 20%
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    Mouser Electronics 25ZLR1800MEFC12.5X20 999
    • 1 $2.32
    • 10 $1.49
    • 100 $1.1
    • 1000 $0.906
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    Rubycon Corporation 16ZLR2700MEFC12.5X20

    Aluminum Electrolytic Capacitors - Radial Leaded 16VDC 2700uF 20%
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    Mouser Electronics 16ZLR2700MEFC12.5X20 997
    • 1 $2.14
    • 10 $1.38
    • 100 $1.02
    • 1000 $0.838
    • 10000 $0.838
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    Rubycon Corporation 35ZLR1500MEFC12.5X25

    Aluminum Electrolytic Capacitors - Radial Leaded 35VDC 1500uF 20%
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    Mouser Electronics 35ZLR1500MEFC12.5X25 995
    • 1 $2.59
    • 10 $1.69
    • 100 $1.28
    • 1000 $1.06
    • 10000 $1.06
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    Rubycon Corporation 25ZLR2200MEFC12.5X25

    Aluminum Electrolytic Capacitors - Radial Leaded 25VDC 2200uF 20%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 25ZLR2200MEFC12.5X25 980
    • 1 $2.49
    • 10 $1.62
    • 100 $1.23
    • 1000 $1.01
    • 10000 $1.01
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    FC 0012 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Q13MC146

    Abstract: q33310f7 Q24FA20h TCO-7107X1A4 Q22FA23V EV-9100JG TCO-7087D1A1 TSX-3225 EPSON FC12M 770sc
    Text: Crystal unit Epson Toyocom Product Number please contact us FC-13F : Q13FC13F0xxxx00 FC-135 : Q1xFC1350xxxx00 kHz RANGE CRYSTAL UNIT LOW PROFILE SMD FC - 13F / FC - 135 •Frequency range : External dimensions : : Overtone order : Applications :


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    FC-13F Q13FC13F0xxxx00 FC-135 Q1xFC1350xxxx00 FC-13F FC-135 Q13MC146 q33310f7 Q24FA20h TCO-7107X1A4 Q22FA23V EV-9100JG TCO-7087D1A1 TSX-3225 EPSON FC12M 770sc PDF

    JW-22CU

    Abstract: STR F12 jw-13pg jw-2HC ZM-61E JW212 B0344 b0345 Z-312J JW-21su
    Text: 00 09 00 04 40 1 00 00 00 00 Fc C 12w M P 00 00 09 04 40 1 00 09 00 SU 211 B w 19 7 Fc P 2 c1 M C 00 1 6 F 90 44 1 07 35 6 07 35 7 09 00 5 73 6 1 44 C M P 00 40 4 19 00 w 12 Fc 00 00 04 1W 21 FC 09 00 SU B 07 35 7 09 Sample of programs 07 35 4 00 ニュー


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    F-310 F-311 F-315 F-316 JW20H F-380 JW-22CU STR F12 jw-13pg jw-2HC ZM-61E JW212 B0344 b0345 Z-312J JW-21su PDF

    Untitled

    Abstract: No abstract text available
    Text: w g m H E W LE T T mL'EM PA CK A R D High Speed Receptacle Photodiodes Technical Data PDT0313-FC-A Features Description • Industry Standard FC Connector The PDT0313-FC-A uses HewlettPackard's highly reliable top entry photodiode mounted in a high speed packaging environment to


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    PDT0313-FC-A PDT0313-FC-A 5963-3561E 4447SÃ 0012bhD PDF

    Untitled

    Abstract: No abstract text available
    Text: N E C E LECTRONI CS INC • fc.7E D fc.427555 QQ3T5Q3 7 2R * N E C E fiPD78002Y Family pPD78001 BY/002BY/P014Y 8-Bit, K-Series Microcontrollers General Purpose With I2C Bus NEC NEC Electronics Inc. Preliminary_ September 1993 Description


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    fiPD78002Y pPD78001 BY/002BY/P014Y) JUPD78001BY juPD78002BY /JPD78P014Y* jjPD78002Y PD78002 pPD78P014Y /UPD78014Y PDF

    VCXO

    Abstract: Y3100
    Text: VCXO at 622.08 MHz SONET/SDH 00-12 Applications DOUBLE DIP SINGLE DIP S fc in o l 434Y2600 Series Center Frequency Output Jitter Control Voltage VECTRON 430Y3100 Series 622,08 MHz 430Y3200 Series 622.08 MHz 622.08 MHz other frequencies available including 155.52 MHz


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    434Y2600 430Y3100 430Y3200 434Y2600 VCXO Y3100 PDF

    UPD6252

    Abstract: IC-7580 toko s102 E2HD 7SI02 RBS 2111 AS15 G IC as15 G D75516 ST 9527
    Text: APPLICATION NOTE ▲ Fanis* N fc L RA75X ASSEMBLER PACKAGE 111 STRUCTURED ASSEMBLER PREPROCESSOR Document No. EEA—12Ö3 0 .0 . No. EE A—803 Date Published April 199IP Printed in Japan APPLICA T/ON NOTE NEC RA75X ASSEMBLER PACKAGE STRUCTURED ASSEMBLER PREPROCESSOR


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    RA75X 199IP UPD6252 IC-7580 toko s102 E2HD 7SI02 RBS 2111 AS15 G IC as15 G D75516 ST 9527 PDF

    HE8807SG

    Abstract: HE8815VG HL7831G HL7831HG HL8312E Hitachi Scans-001 HE8403
    Text: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.


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    Q012DE7 HL7831G/HG HL7831G/HG HL7831HG) HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8807SG HL7831G HL7831HG HL8312E Hitachi Scans-001 HE8403 PDF

    HXD BUZZER

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC NEC Electronics Inc. fc,7E J> • b457525 OüBTHfil 3TQ « N E C E JUPD78064 Family frfPD78062/063/064/P064 8-Bit, K-Series Microcontrollers With LCD Controller/Driver, UART, and A/D Converter September 1993


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    b457525 JUPD78064 frfPD78062/063/064/P064) JUPD78062, pPD78063, /PD78064, PD78P064 100-Pin P100GF-65-3BA) 83YL-5S11B HXD BUZZER PDF

    Untitled

    Abstract: No abstract text available
    Text: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description 7 The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.


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    Q012DE7 HL7831G/HG HL7831G/HG HL7831HG) voltL7831G) 44Tb2QS HL7831G) PDF

    bf964

    Abstract: bf964 in vhf mixer TRANSISTOR r315 r315 TRANSISTOR mosfet BF964 PHILIPS MOSFET MARKING R315
    Text: N AMER PHILIPS/DISCRETE ObE D • fc,fa53i31 0012150 h ■ _ „ B BF964; _ A_ _ T-Jt-as" SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r v.h.f. applications in television tuners, especially in r.f. stages and m ixer stages in S-channel


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    BF964: bf964 bf964 in vhf mixer TRANSISTOR r315 r315 TRANSISTOR mosfet BF964 PHILIPS MOSFET MARKING R315 PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY CXA2521AQ RF Amplifier for CD Player and CD-ROM Description The CXA2521AQ is an IC for RF signal processing of CD player and CD-ROM. Features • Supports quadruple speed. RF signal fc^SM H z • Peak hold circuit time constant of mirror circuit can


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    CXA2521AQ D012L13 CXA2S21AQ 32PIN QFP-MP-L01 QFP032-P-0707-A 42ALLOY Q012bl4 PDF

    Untitled

    Abstract: No abstract text available
    Text: W h p tHEWLETT mitLM PACKARD Fiber Optic “Logic to Light »TM Transmitter Technical Data XMT3350 Features Description • Reliable 1300 iun MOVPE BH Laser • Single 5 Volt Supply • Compact FC Connectorized 14 Pin DIP Plastic Package • Speeds to 250 M bits/second


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    XMT3350 XMT3350 5963-3861E 0G1274S 4538C PDF

    SSR2955

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC fc»ME D • 7=^142 □ Q lE M 'll P-CHANNEL POWER MOSFET SSR2955/U2955 FEATURES • • • • • • • • 54Ô BiStlGK D-PACK Lower FtDS on Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure


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    SSR2955/U2955 SSR2955 SSR2955/U2955 SSU2955 PDF

    Untitled

    Abstract: No abstract text available
    Text: 509I002P0I FC R 4 .0 M C 5 Udd= 5 [ U ] 0 Typical g a. U1H/U1L - EU] F ig .a ~ e § V mu 4 9 v i n o- -u- V § - $ - Ull 'd— •o' I -0 1 _1_ 1_1_ L_i_i_i_l_1_ 1_ 1_ _ 1_1_1_1_L _1_ b.


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    509I002P01 509I002P0I 5091002P0I PDF

    Untitled

    Abstract: No abstract text available
    Text: Wha%H E W L E T T mLfim P A C K A R D Connectorized ELEDS Technical Data LSTOXOO Features Description • Industry Standard FC and ST Connectors The LST range of products includes a wide variety of connectorized ELED emitters for both single mode and multimode


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    PDF

    Zilog Z320

    Abstract: zilog 3651 Z80000 Z320 Z8000 SEGMENTED CACHE
    Text: ZILOG INC 17E D cn ñ 4 D 4 3 OOllTTS fc, Ú PRELIMINARY . "vr-. ;» * « / Product Specification A ' ‘ ; :• October 1988 - r - m - 1 7 . 0 7 Z320 CPU FEATURES • Full 32-bit architecture and implementation ■ ■ 4G billion bytes of directly addressable memory in each


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    Z320TM 32-bit 68-Pin 84-Pin Zilog Z320 zilog 3651 Z80000 Z320 Z8000 SEGMENTED CACHE PDF

    IRf 444 MOSFET

    Abstract: DIODE Z32 irf9z34 IRF9Z30 irf9z34 mosfet IRF z34 MOSFET IRF high current p-channel P-channel power mosfet irf IRF9Z35 IRf 444
    Text: SAMSUNG ELECTRONICS INC fc^E D • 7^4142 IRF9Z34/Z35 IRF9Z30/Z32 □ □ 1 2 2 Iìc T77 M S U G K P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds <on > Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


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    IRF9Z34/Z35 IRF9Z30/Z32 IRF9Z30 IRF9Z34 IRF9Z32 IRF9Z35 IRf 444 MOSFET DIODE Z32 irf9z34 mosfet IRF z34 MOSFET IRF high current p-channel P-channel power mosfet irf IRf 444 PDF

    CXA2515N

    Abstract: 20PIN CXA2515M Photodiode and amplifier IC for CD transistor g23 cd-rom rf amplifier
    Text: , U N Y I_ C X A 2 5 1 5 M / N RF Amplifier for CD Player and CD-ROM Description The CXA2515M/N is an IC for RF signal processing of CD player and CD-ROM. Features • Wide-band RF amplifier. RF signal fc > 12MHz • RF equalizer (T type)


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    CXA2515M/N 12MHz) CXA2515M CXA2515N -65to 20PIN 300mil Photodiode and amplifier IC for CD transistor g23 cd-rom rf amplifier PDF

    DD127d

    Abstract: DLR1040-ST2 DLT1040-ST2 ODL125 DLT1040-ST1 DLR1040-ST1 AMD Supernet 2 dlr1040-st ODL-125 DLT/R1040-STX
    Text: W fip l H E W LE T T 1"UM PA C K A R D Fiber Optic Data Links Technical Data DLT1040-STX Transmitter DLR1040-STX Receiver Features Description • FDDI PMD/ATM UNI or Fiber Channel FC-O Versions Available • Single +5 V Power Supply • Compact 16-pin DIP Package


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    DLT1040-STX DLR1040-STX 16-pin ODL125® ODL156® ODL200® DLT/R1040-STX DLT1040 DLR1040 DLT1040-ST DD127d DLR1040-ST2 DLT1040-ST2 ODL125 DLT1040-ST1 DLR1040-ST1 AMD Supernet 2 dlr1040-st ODL-125 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY54/74FCT273T 8-BIT REGISTER ^ fc ^ C Y P R E S S FEATURES • Logic Levels 64 mA Sink Current Com’l , 32 mA (Mil) I 15 mA Source Current (Com’l), 12 mA (Mil) CMOS for Low-Power Consumption — Typically I 1/3 of FAST Bipolar Logic Edge Triggered D Flip-Flops


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    CY54/74FCT273T IL-STD-883, 273AT 273CT 25flTbbE PDF

    Untitled

    Abstract: No abstract text available
    Text: ,OJNY 1_ CXA2556Q RF Amplifier for CD Player/CD-ROM Description The CXA2556Q is an 1C for RF signal processing of CD player and CD-ROM. Features • Wide-band RF AC amplifier RF AC signal fc > 20MHz • 4-mode RF equalizer (active filter type) • RF equalizer boost amount and cut-off frequency


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    CXA2556Q CXA2556Q 20MHz) 800mVp-p 32PIN QFP-32P-L01 QFP032-P-0707-A PDF

    Untitled

    Abstract: No abstract text available
    Text: / X U im LTC1350 TECHNOLOGY 3.3V Low Power EIA/TIA-562 3-Driver/ 5-Receiver Transceiver FC R TU R C S D € S C R IP T IO n • Low Supply Current 300mA ■ Receivers 4 and 5 Kept Alive 35uA in SHUTDOWN ■ ESD Protection ±10kV ■ Operates from a Single 3.3V Supply


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    LTC1350 EIA/TIA-562 300mA 120kBaud LTC1350 300nA. G0123S3 PDF

    HL8312E

    Abstract: 44FC I00C HE8807SG HE8811 HE8812SG HE8813VG HE8815VG HL7841MG HE7601
    Text: HITACHI/ OPTOELECTRONICS SME T> 44^fc.20S G 0 1 2 0 4 7 07T • HL7841MG (Preliminary) GaAIAs LD 7 Description The HL7841MG is a 0.78 (im band GaAIAs laser diode with a multi-quantum well (MQW) structure. It is especially suitable as a light source for laser beam printers with its low threshold current and low slope


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    HL7841MG G012047 HL7841MG HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, HL8312E 44FC I00C HE8807SG HE8811 HE8812SG HE8813VG HE7601 PDF

    cdb 442

    Abstract: No abstract text available
    Text: IC dependence of oscillating character istics uPD69MC Room Temp. FCR4.0M5 - S Udd [U] CLI/CL2 CpF] 3 item 20 / 20 a~e uPD69MC - 16 FCR4.0M5 Udd= 3 CU1 a. U1H/U1L -I I -0 [U] I I I I I I (Fig.cTd) Ta= 20 [deg] Typical I I I I I I l_ "23" _l U2L 'G & fc- I


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    uPD69MC cdb 442 PDF