Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FAST RECOVERY DIODE HITACHI Search Results

    FAST RECOVERY DIODE HITACHI Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-USB2AMBMMC-002
    Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-002 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 2m (6.6') Datasheet
    CS-USB2AMBMMC-001
    Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-001 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 1m (3.3') Datasheet
    54F521/BRA
    Rochester Electronics LLC M38510/34701BRA - 54F521 - Identity Comparator, F/FAST Visit Rochester Electronics LLC Buy
    900HM/B
    Rochester Electronics LLC 900HM - Inverter, DTL Visit Rochester Electronics LLC Buy
    900HM/2
    Rochester Electronics LLC 900HM - Inverter, DTL Visit Rochester Electronics LLC Buy

    FAST RECOVERY DIODE HITACHI Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    diode hitachi

    Abstract: LS190N 1000-1 POWER MODULE
    Contextual Info: DIODE MODULE Spec.No.SR2-SP-10001 R0 MDM800H45E2-H P1 Target Specification OUTLINE DRAWING FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure.


    Original
    SR2-SP-10001 MDM800H45E2-H diode hitachi LS190N 1000-1 POWER MODULE PDF

    Contextual Info: DIODE MODULE Spec.No.SR2-SP-09005 R6 P1 MDM1200H45E2-H FEATURES  Low Reverse Recovery Loss diode module.  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.


    Original
    SR2-SP-09005 MDM1200H45E2-H PDF

    Contextual Info: DIODE MODULE Spec.No.SR2-SP-10001 R1 MDM800H45E2-H Target Specification FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes.


    Original
    SR2-SP-10001 MDM800H45E2-H MDM800H45r PDF

    MDM1200H45E2-H

    Abstract: mbn1200h45e2-h MBN1200H45
    Contextual Info: DIODE MODULE Spec.No.SR2-SP-09005 R4 MDM1200H45E2-H P1 Preliminary Specification FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes.


    Original
    SR2-SP-09005 MDM1200H45E2-H MDM1200H45Er MDM1200H45E2-H mbn1200h45e2-h MBN1200H45 PDF

    Contextual Info: DIODE MODULE Spec.No.SR2-SP-10001 R2 P1 MDM800H45E2-H Target Specification FEATURES  Low Reverse Recovery Loss diode module.  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.


    Original
    SR2-SP-10001 MDM800H45E2-H PDF

    Contextual Info: DIODE MODULE Spec.No.SR2-SP-09001 R1 P1 MDM800H45E2 Target Specification OUTLINE DRAWING FEATURES  Low VF diode module.  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.


    Original
    SR2-SP-09001 MDM800H45E2 MDM800E45E2 PDF

    Hitachi DSA00281

    Abstract: MBN1200H45
    Contextual Info: DIODE MODULE Spec.No.SR2-SP-09006 R0 MDM1200H45E2 P1/2 TARGET Specification OUTLINE DRAWING FEATURES ∗ Low VF diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes.


    Original
    SR2-SP-09006 MDM1200H45E2 Hitachi DSA00281 MBN1200H45 PDF

    MBN1200H45E2-H

    Contextual Info: DIODE MODULE Spec.No.SR2-SP-09006 R2 P1 MDM1200H45E2 FEATURES  Low VF diode module.  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.  Isolated heat sink terminal to base .


    Original
    SR2-SP-09006 MDM1200H45E2 MBN1200H45E2-H PDF

    Contextual Info: DIODE MODULE Spec.No.SR2-SP-09006 R1 P1 MDM1200H45E2 FEATURES ∗ Low VF diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .


    Original
    SR2-SP-09006 MDM1200H45E2 PDF

    Contextual Info: DIODE MODULE Spec.No.SR2-SP-09003 R4 MDM750H65E2 FEATURES  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.  Isolated heat sink terminal to base .


    Original
    SR2-SP-09003 MDM750H65E2 PDF

    MDM80

    Abstract: MDM800H45E2 Hitachi DSA00281
    Contextual Info: DIODE MODULE Spec.No.SR2 -SP-09001 R0 MDM800H45E2 Target Specification OUTLINE DRAWING Unit in mm FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes.


    Original
    -SP-09001 MDM800H45E2 MDM800E45E2 MDM80 MDM800H45E2 Hitachi DSA00281 PDF

    P4 diode

    Abstract: MBN500H65E2 p5 diode
    Contextual Info: DIODE MODULE Spec.No.SR2-SP-09007 R1 MDM500H65E2 Preliminary Specification FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .


    Original
    SR2-SP-09007 MDM500H65E2 P4 diode MBN500H65E2 p5 diode PDF

    Contextual Info: DIODE MODULE Spec.No.SR2-SP-09003 R2 MDM750H65E2 TENTATIVE Datasheet FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .


    Original
    SR2-SP-09003 MDM750H65E2 PDF

    Contextual Info: DIODE MODULE Spec.No.SR2-SP-09003 R3 MDM750H65E2 Preliminary Specification FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .


    Original
    SR2-SP-09003 MDM750H65E2 PDF

    Contextual Info: DIODE MODULE Spec.No.SR2-SP-09007 R4 MDM500H65E2 Preliminary Specification FEATURES  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.  Isolated heat sink terminal to base .


    Original
    SR2-SP-09007 MDM500H65E2 PDF

    3AG1A

    Contextual Info: DIODE MODULE Spec.No.SR2-SP-09007 R2 MDM500H65E2 Preliminary Specification FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .


    Original
    SR2-SP-09007 MDM500H65E2 3AG1A PDF

    MBN1200E33E

    Abstract: gate turn-off igbt control
    Contextual Info: IGBT MODULE MBN1200E33E FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise recovery: Ultra soft fast recovery diode.


    Original
    MBN1200E33E 000cycles) MBN1200E33E gate turn-off igbt control PDF

    Contextual Info: FAST RECOVERY DIODE DFM1MF FEATURES OUTLINE DRAWING • For high speed switching • Soft recovery, low noise. • Low loss, high efficiency. ABSOLUTE MAXIMUM RATINGS Item Type DFM1MF2 Repetitive Peak Reverse Voltage V RRM V Average Forward Current I F AV


    Original
    PDF

    Contextual Info: FAST RECOVERY DIODE DFM3MF FEATURES OUTLINE DRAWING • For high speed switching • Soft recovery, low noise. • Low loss, high efficiency. ABSOLUTE MAXIMUM RATINGS Item Type DFM3MF2 Repetitive Peak Reverse Voltage V RRM V Average Forward Current I F AV


    Original
    PDF

    mbn1000e33e2

    Abstract: MBN1000
    Contextual Info: IGBT MODULE MBN1000E33E2 Preliminary Specification FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise recovery: Ultra soft fast recovery diode.


    Original
    MBN1000E33E2 000cycles) mbn1000e33e2 MBN1000 PDF

    ic 7400

    Abstract: MBB100A6 MBB50A6 MBB75A6 MBM100A6 MBM150A6 MBM200A6 MBM300A6 MBM50A6 MBM75A6
    Contextual Info: HITACHI 22 2.6 IGBT Module Range with Soft and Fast SFD Free-Wheeling Diodes In order to maintain switching losses to minimal, improving Free Wheeling Diodes, (FWD), is essential and Hitachi's version of this is the Soft and Fast Recovery (SFD) Free Wheeling Diode.


    OCR Scan
    MBM75A6 MBM100A6 MBM150A6 MBM200A6 MBM300A6 MBB50A6 MBB75A6 MBB100A6 MBN200F12 MBN300F12 ic 7400 MBB100A6 MBB75A6 MBM100A6 MBM150A6 MBM200A6 MBM300A6 MBM50A6 MBM75A6 PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-04023 R3 P1 MBN1800E17DD Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module due to LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC)


    Original
    IGBT-SP-04023 MBN1800E17DD 000cycles) PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10002 R3 MBN1500E33E3 FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise recovery: Ultra soft fast recovery diode.


    Original
    IGBT-SP-10002 MBN1500E33E3 000cycles) PDF

    z7my

    Abstract: Z7my7g7 MBM1200E17E z7m-y7g7 z7m-y7g7# T61200
    Contextual Info: IGBT MODULE MBM1200E17E Preliminary SPEC. OUTLINE DRAWING Unit in mm FEATURES * Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. * Low driving power: Low input capacitance advanced trench gate. * Low noise recovery: Ultra soft fast recovery diode.


    Original
    MBM1200E17E 000cycles) z7my Z7my7g7 MBM1200E17E z7m-y7g7 z7m-y7g7# T61200 PDF