Untitled
Abstract: No abstract text available
Text: DUAL FAST RECOVERY RECTIFIER DIODE BYV34-400MN2 • • • • • Dual Fast Rectifiers with Common Cathode Very Low Reverse Recovery Time – trr <35ns. High Voltage 400V. Hermetic Ceramic Surface Mount Package. Ideally Suited For Switching Power Supplies, Inverters
|
Original
|
BYV34-400MN2
Maximum80Â
O-276AB)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DUAL FAST RECOVERY RECTIFIER DIODE BYV34-400MN2 • • • • • Dual Fast Rectifiers with Common Cathode Very Low Reverse Recovery Time – trr <35ns. High Voltage 400V. Hermetic Ceramic Surface Mount Package. Ideally Suited For Switching Power Supplies, Inverters
|
Original
|
BYV34-400MN2
O-276AB)
|
PDF
|
fast recovery diode 400v 5A
Abstract: BYV34-400MN2 power Diode 400V 20A
Text: DUAL FAST RECOVERY RECTIFIER DIODE BYV34-400MN2 • • • • • Dual Fast Rectifiers with Common Cathode Very Low Reverse Recovery Time – trr <35ns. High Voltage 400V. Hermetic Ceramic Surface Mount Package. Ideally Suited For Switching Power Supplies, Inverters
|
Original
|
BYV34-400MN2
O-276AB)
fast recovery diode 400v 5A
BYV34-400MN2
power Diode 400V 20A
|
PDF
|
50VF30
Abstract: 50VF30F 50VF40 50VF40F
Text: FAST RECOVERY DIODE 50VF30 50VF40 50VF30F 50VF40F 5.5A/300~400V/trr : 40nsec FEATURES 2.38M AX .094 ° T0-251AA Case n TO-252AA Case, Surface Mount Device • Ultra - Fast Recovery o Low Forward Voltage Drop ° Low Power Loss » High Surge Capability
|
OCR Scan
|
A/300
00V/trr
40nsec
50VF30
50VF40
50VF30F
50VF40F
O-251AA
O-252AA
50VF40F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 50VF30 50VF40 50VF30F 50VF40F 5.5A/300~ 400V/trr : 40nsec FEATURES • TO-251AA Case o TO-252AA Case, Surface Mount Device 0 Ultra - Fast Recovery o Low Forward Voltage Drop ° Low Power Loss « High Surge Capability • 100 Volts thru 400 Votls
|
OCR Scan
|
50VF30
50VF40
50VF30F
50VF40F
A/300~
00V/trr
40nsec
O-251AA
O-252AA
|
PDF
|
F5KF40
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 5.5A/300 400V/trr:45nsec 5KF30B F5KF30B 5KF40B F5KF40B FEATURES 0 Similar to T0-220AC and TO-220AB Case ‘ Fully Molded Isolation Case F- Type • Ultra - Fast Recovery ° Low Forward Voltage Drop Efficiency ° Low Power Loss, High ° High Surge Capability
|
OCR Scan
|
T0-220AC
O-220AB
A/300
00V/trr
45nsec
5KF30B
F5KF30B
5KF40B
F5KF40B
5KF30
F5KF40
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 50VF30 50VF40 50VF30F 50VF40F 5.5A/300— 400V/trr : 40nsec FEATURES 0 TO-251AA Case » TO-252AA Case, Surface Mount Device ° Ultra - Fast Recovery « Low Forward Voltage Drop ° Low Power Loss ° High Surge Capability « 100 Volts thru 400 Votls
|
OCR Scan
|
O-251AA
O-252AA
A/300--
00V/trr
40nsec
50VF30
50VF40
50VF30F
50VF40F
|
PDF
|
10C2
Abstract: ULTRA FAST diode 400v 5a vrrm 400v if 20A ultra fast recovery diode 5GUZ47 markT2
Text: TOSHIBA 5GUZ47 TOSHIBA SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE 5GUZ47 Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 43.2 ± 0.2 10.3MAX. • Repetitive Peak Reverse Voltage V = 400V • Average Output Rectified Current I0 = 5A
|
OCR Scan
|
5GUZ47
100ns
961001EAA2'
10C2
ULTRA FAST diode 400v 5a
vrrm 400v if 20A ultra fast recovery diode
5GUZ47
markT2
|
PDF
|
30KF40B
Abstract: 30KF40E 30KF30B 30KF30E
Text: FAST RECOVERY DIODE 30KF30E 30KF40E 30KF30B 30KF40B 33A/300~400V/trr : 60nsec FEATURES 3.«.: tic * Similar to TO-247AC Case I ° Ultra - Past Recovery h 4.31.169 * Low Forward Voltage Drop ’ 1- o Low Power Loss, High 2.2 ;.0 os 877]| J 3. 0.8(.031) M À X
|
OCR Scan
|
00V/t
60nsec
30KF30E
30KF40E
30KF30B
30KF40B
O-247AC
30KF--E
30KF40B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: □ - □ 3 . Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D5LC40 400V 5A HSS'iX > trr50n s >SRS;H >^BsOAw0, ^ m iB s FA RATINGS Absolute Maximum Ratings a a i s E -fS y m b o l C o n d it io n s It e m Storage Temperature Operating Junction Temperature
|
OCR Scan
|
D5LC40
trr50n
50HziE5K
J515-5
|
PDF
|
fast recovery diode 400v 5A
Abstract: No abstract text available
Text: □ -□ 7 . V'CX-Y- Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS SF5LC40 400V 5A m y 't'X >trr50ns >7 ,llÆ-,lbK > $ È jfIÎJ± 2 kV ffilI >SRSÜ >^BsOAw0, ^ K H s . FA RATINGS Absolute Maximum Ratings a a i E -f- Item 5 Tc = 25°C BH - - —
|
OCR Scan
|
SF5LC40
trr50ns
50HziE5K
J515-5
fast recovery diode 400v 5A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: g g y 2 ^ ^ SILICON EPITAXIAL TYPE SUPER FAST RECOVERY DIODE U n i t in m m SWITCHING TYPE POWER SUPPLY APPLICATION. 1 0.3 MAX CONVERTER & CHOPPER APPLICATION. ‘ • Repetitive Peak Reverse Voltage : V rj {j{=400V • Average Output Rectified Current : I o = 5A
|
OCR Scan
|
100ns
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO SHIBA 5GUZ47 TOSHIBA SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE 5GUZ47 U nit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 10.3 M A X. = 400V • Repetitive Peak Reverse Voltage V • Average Output Rectified Current
|
OCR Scan
|
5GUZ47
100ns
961001EAA2'
|
PDF
|
F5LC40
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode O U T L IN E SF5LC40 Weight 1.9« T yp 10 o ^ * !> X W ) 400V 5A Date code Feature Control No. •i& y 'fx • Low Noise • trr=50ns • tnr=50ns • 711^-10 K • Full Molded am*} • Dielectric Strength 2kV 2kV ( S II
|
OCR Scan
|
SF5LC40
F5LC40
110ms
J533-1)
F5LC40
|
PDF
|
|
|
e5lc
Abstract: C475N
Text: □ - □ 3 . Super Fast Recovery Diode Twin Diode mn?â Surface Mount OUTLINE DIMENSIONS DE5LC40 Unit • mm Package I E i ' i v O 'M V #—U> ^ v *y K0 # # / * £ Standard soldering pad 400V 5A * « : ±0.1 T o le ra n c e : ± 0.1 •S M D 0.5±al •e y -rx
|
OCR Scan
|
DE5LC40
20//m
e5lc
C475N
|
PDF
|
fast recovery diode 400v 5A
Abstract: YG226S4
Text: YG226S4 5A (400V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 1 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design
|
Original
|
YG226S4
13Min
SC-67
fast recovery diode 400v 5A
YG226S4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: YG226S4 5A (400V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 1 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design
|
Original
|
YG226S4
13Min
SC-67
|
PDF
|
YG339N4
Abstract: No abstract text available
Text: YG339C4,N4,D4 5A (400V / 5A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2
|
Original
|
YG339C4
13Min
SC-67
YG339C4
YG339N4
YG339D4
YG339N4
|
PDF
|
fast recovery diode 400v 5A
Abstract: No abstract text available
Text: YG226S4 5A (400V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 1 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design
|
Original
|
YG226S4
13Min
SC-67
fast recovery diode 400v 5A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: YG339C4,N4,D4 5A (400V / 5A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2
|
Original
|
YG339C4
13Min
SC-67
YG339N4
YG339D4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: — K ïÎ'n .— i> Diode Module n - n x V 'C X - Y - Super Fast Recovery Diode OUTLINE DIMENSIONS D120LC40 400V 120A > t r r l 00n s > F A s D 7 tt'iy h RATINGS Absolute Maximum Ratings a a Ite m Storage Temperature m &nm m Operating Junction Temperature
|
OCR Scan
|
D120LC40
J515-5
|
PDF
|
YG339C4
Abstract: YG339D4 YG339N4
Text: YG339C4,N4,D4 5A (400V / 5A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2
|
Original
|
YG339C4
13Min
SC-67
YG339C4
YG339N4
YG339D4
YG339D4
YG339N4
|
PDF
|
SHINDENGEN DIODE
Abstract: No abstract text available
Text: n - n z f i t - K yO S Twin Diode Super Fast Recovery Diode OUTLINE DIMENSIONS D5LC40 Case : ITO220 400V 5A • ß y -rx # trr5 0 n s •S R S S OA. STO • a « , « is . fa • Æ tè ü rn RATINGS •¡fe ê Î'jlf^A E ltë m Item Absolute Maximum Ratings
|
OCR Scan
|
D5LC40
ITO220
SHINDENGEN DIODE
|
PDF
|
700-FSM
Abstract: PF10
Text: ESAC39 C,N,D (5A) (400V to 600V / 5A) Outline drawings, mm 10+0.5 4.5±0.2 1.32 1.2 14 -0.5 3.7±0.2 15±0.2 2.7±0.1 Ø3.6±0.2 6.4±0.2 FAST RECOVERY DIODE 0.4 0.8 2.7 2.54 5.08 Features JEDEC EIAJ Super high speed switching Low VF in turn on High reliability
|
Original
|
ESAC39
O-220AB
SC-46
ESAC39C
ESAC39-
et-04
cur140
700-FSM
PF10
|
PDF
|
