FAST RECOVERY DIODE 200NS 2A Search Results

FAST RECOVERY DIODE 200ns

Abstract: fast recovery diode 1a trr 200ns fast recovery diode 2a trr 200ns TO3 package RthJC diode 15A FAST RECOVERY DIODE 200ns 2a NTE6200 NTE6202 NTE6206 NTE6208
Contextual Info: NTE6200 thru NTE6210 Positive Center Tapped Silicon Recitifers 30 Amp 15A per diode Features: D D D D Available in Standard (NTE6200 & NTE6202) and Fast (NTE6206 thru NTE6210) Recovery 250 Amps Peak One Half Cycle Surge Current Fast Recovery Types: trr = 200ns Max

fast recovery diode 2a trr 200ns

Abstract: vvvf motor QCA100BA60 600v 2A ultra fast recovery diode dc motor control 100A Darlington 300v
Contextual Info: TRANSISTOR MODULE Hi- QCA100BA60 UL;E76102 M QCA100BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is

Contextual Info: T R A N S IS T O R M O D U L E ^ - > QCA100BA60 UL!E76102 M Q C A 10 0 B A 6 0 is a dual Darlington power transistor module which has series-connected U LTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral­ leled fast recovery diode (trr: 200ns). The mounting base of the

smd 1gw

Abstract: diode Z47 1ZB36 1ZB20 zener U1DL49 1ZB20 6B4B41 FAST RECOVERY DIODE 200ns 2a 1B4B41 J2C42
Contextual Info: a SELECTOR GUIDE The following products are recommended for use in any new circuitry designs. General Purpose Rectifiers —> Peak Repetitive Reverse Voltage 600V 1000V 1S 1887 1S 1888 1S 1830 S5277B S5277G S5277J S5277N D O -41S S5566B S5566G S5566J S5566N

FRG25BA60

Abstract: FRG25CA120 FRS150BA50 FRS300BA50 FRG25BA
Contextual Info: DIODE MODULE（F.R.D.） FRG25BA60 UL;E76102 （M） FRG25BA60 is a high speed（fast recovery）isolated diode module designed for high power switching application. FRG25BA60 is suitable for high frequency application requiring low loss and high speed control.

transistor S104

Abstract: 2N5549
Contextual Info: The FET as a Chopper Application Report B60 Texas Instruments Limited • Manton Lane Bedford • Phone 0234 67466 • Telex 82178 SUMMARY Characteristics o f the F.E.T. applicable to switching/ chopping circuits are first discussed in general and with respect to ‘on’ and ‘o f f equivalent circuits.

Contextual Info: 1N3893 MECHANICAL DATA Dimensions in mm 17.65 0.695 17.39 (0.685) 17.65 (0.695) 17.39 (0.685) 6.86 (0.270) 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) DUAL FAST RECOVERY RECTIFIER IN A TO259 HERMETIC PACKAGE 1.14 (0.707) 0.88 (0.035) 13.84 (0.545) 13.58 (0.535)

IC-100A

Abstract: QCA100BA60 hFE-750
Contextual Info: TRANSISTOR MODULE（Hi-β） QCA100BA60 UL;E76102 （M） QCA100BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is

QCA100BA60

Contextual Info: TRANSISTOR MODULE（Hi-β） QCA100BA60 UL;E76102 （M） QCA100BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

E2 diode

Abstract: Diode B2x
Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1

Q67040-S4340

Abstract: SKA06N60
Contextual Info: SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

FAST RECOVERY DIODE 200ns 8A 40V

Abstract: 6A, 100v fast recovery diode Q67040-S4340 SKA06N60 200v 1.5v 3a diode 400v 3a low vf diode
Contextual Info: Preliminary SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

K06N60

Abstract: fast recovery diode 2a trr 200ns SKB02N60
Contextual Info: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

K06N60

Abstract: fast recovery diode 2a trr 200ns PG-TO-220-3-1 SKP02N60
Contextual Info: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

K06N60

Abstract: PG-TO-263-3-2 SKB06N60
Contextual Info: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,

Q67040-S4230

Abstract: SKP06N60 25E-4 Q67040-S4231 SKB06N60 mar 716
Contextual Info: SKP06N60 SKB06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

Contextual Info: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

K04n60

Contextual Info: SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls, Inverter

K04N60

Contextual Info: SKP04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

Contextual Info: SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for frequency inverters for washing machines,

SKB04N60

Abstract: SKP04N60 Q67040-S4229
Contextual Info: SKP04N60 SKB04N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

Contextual Info: SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for frequency inverters for washing machines,

K04N60

Abstract: 600VDC SKB04N60
Contextual Info: SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls, Inverter