FAST RECOVERY DIODE 200NS Search Results

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE Description: Mitsubishi Super Fast Recovery Diodes are designed for use in applications requiring fast switching. Features: □ Non-lsolated Package □ Planar Chips

FAST RECOVERY DIODE 200ns

Abstract: fast recovery diode 1a trr 200ns fast recovery diode 2a trr 200ns TO3 package RthJC diode 15A FAST RECOVERY DIODE 200ns 2a NTE6200 NTE6202 NTE6206 NTE6208
Contextual Info: NTE6200 thru NTE6210 Positive Center Tapped Silicon Recitifers 30 Amp 15A per diode Features: D D D D Available in Standard (NTE6200 & NTE6202) and Fast (NTE6206 thru NTE6210) Recovery 250 Amps Peak One Half Cycle Surge Current Fast Recovery Types: trr = 200ns Max

ir 30df2

Abstract: 30DF1 30DF2 30df 300F2 QDD2153 t10039 Diode 30df2
Contextual Info: FAST RECOVERY DIODE 3.3A/100— 200V/trr : 200nsec 30DF1 30DF2 FEATURES ° Super Fast Recovery ° Low Forward Voltage Drop « Low Power Loss, High Efficiency ° High Surge Capability ° 100 Volts through 600 Volts Types Available MAXIMUM RATINGS \ type 30DF1

Contextual Info: IDW100E60 Fast Switching Emitter Controlled Diode A Features: • 600V Emitter Controlled technology  Fast recovery  Soft switching  Low reverse recovery charge  Low forward voltage  175 °C junction operating temperature  Easy paralleling

10EF1

Abstract: S 437 Diode 10EF2
Contextual Info: FAST RECOVERY DIODE 1.1A /100— 2 0 0 V /trr : 200nsec 10EF1 10EF2 FEATURES ° Miniature Size ° Super Fast Recovery ° Low Forward Voltage Drop 0 Low Power Loss, High Efficiency ° High Surge Capability ° 2 6mm and 52mm Inside Tape Spacing Package Available

10DF1

Abstract: 10DF2 n439
Contextual Info: FAST RECOVERY DIODE 1.1A/100— 200V/trr : 200nsec 10DF1 10DF2 FEATURES ° Miniature Size 2.71.106 DIA 2.3 .091) -GO ° Super Fast Recovery » Low Forward Voltage Drop 0.9(.035) n r * 0.7Î.027) o Low Power Loss, High Efficiency 27(1.06) MIN ° High Surge Capability

FAST RECOVERY DIODE 200ns

Abstract: RM50HG-12S
Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE B F D A G - DIA. K L H C J Description: Mitsubishi Super Fast Recovery Diodes are designed for use in applications requiring fast switching. Features: 2 1 3 ٗ Non-Isolated Package

RM50HG-12S

Abstract: FAST RECOVERY DIODE 200ns
Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE B F D A G - DIA. K L H C J Description: Mitsubishi Super Fast Recovery Diodes are designed for use in applications requiring fast switching. Features: 2 1 3 ٗ Non-Isolated Package

Contextual Info: FAST RECOVERY DIODE 3.3A/100— 200V/trr : 200nsec 30DF1 30DF2 FEATURES o Super Fast Recovery 5.8 .23 DIA °law Forward Voltage Drop 1.5(.059)DIA 1.30051) « Low Power Loss, High Efficiency 21(.83) MIN ° High Surge Capability ° 100 Volts through 600 Volts Types Available

R/1N5815 Diode

Contextual Info: IDW75E60 Fast Switching Emitter Controlled Diode Features: • 600V EmCon technology  Fast recovery  Soft switching  Low reverse recovery charge  Low forward voltage  175°C junction operating temperature  Easy paralleling  Pb-free lead plating; RoHS compliant

d100e60

Abstract: PG-TO-247-3-21 PG-TO247-3-21 FAST RECOVERY DIODE 200ns idw100e60 k 4145 d100e60 DATASHEET Emcon
Contextual Info: IDW100E60 Fast Switching EmCon Diode A Features: • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • 175 °C junction operating temperature • Easy paralleling • Pb-free lead plating; RoHS compliant

d100e60

Abstract: IDW100E60
Contextual Info: IDW100E60 Fast Switching Emitter Controlled Diode Features: • 600V Emitter Controlled technology  Fast recovery  Soft switching  Low reverse recovery charge  Low forward voltage  175°C junction operating temperature  Easy paralleling  Pb-free lead plating; RoHS compliant

D100E60

Abstract: PG-TO-247-3-21 PG-TO247-3-21 FAST RECOVERY DIODE 200ns 500a reversed diode d100e60 DATASHEET diode current 1200A fast recovery diode 600v 1200A IDW100E60 typical diode
Contextual Info: IDW100E60 Fast Switching EmCon Diode A Features: • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • 175 °C junction operating temperature • Easy paralleling • Pb-free lead plating; RoHS compliant

d100e60

Abstract: IDW100E60 009381 PG-TO-247-3 DIODE 1000a
Contextual Info: IDW100E60 Fast Switching EmCon Diode A Features: • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • 175 °C junction operating temperature • Easy paralleling • Pb-free lead plating; RoHS compliant

10EF1

Abstract: 10EF2
Contextual Info: FAST RECOVERY DIODE l.lA /10 0~ 20 0V /trr : 200nsec 10EF1 10EF2 FEATURES ° Miniature Size 2.7 .106 nlA M A X U1A « Super Fast Recovery o Low Forward Voltage Drop 0.7(.027)DIA 0.5(.020) •>Low Power Loss, High Efficiency 2 7 ( 1.0 6 ) ' M IN ° High Surge Capability

Contextual Info: l.lA / 1 0 0 ~ 2 0 0 V / t r r : 200nsec FAST RECOVERY DIODE 10 D F1 10DF2 FEATURES «Miniature Size ° Super Fast Recovery * Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 100 Volts thru 800 Volts Types Available ° 52mm Inside Tape Spacing Package Available

10EF2

Abstract: 10EF1
Contextual Info: FAST RECOVERY DIODE l .lA / 1 0 0 ~ 2 0 0 V / t r r : 200nsec 1 0 E F 1 10 EF2 FEATURES ° Miniature Size ° Super Fast Recovery ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability » 26mm and 52mm Inside Tape Spacing Package Available

FAST RECOVERY DIODE 200ns

Abstract: RM50HG-12S
Contextual Info: RM50HG-12S Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Super Fast Recovery Single Diode Module 50 Amperes/600 Volts B F D A G - DIA. K L 2 1 H C J Description: Powerex Super Fast Recovery Diodes are designed for use in

30DF1

Contextual Info: FAST RECOVERY DIODE 3 .3 A /1 0 0 — 2 0 0 V /trr : 200nsec 30DF1 30DF2 FEA TUR ES « Super Fast Recovery 5.8I.231DIA ° Low Forward Voltage Drop 1.51.059 D IA 1.31.051) o Low Power Loss, High Efficiency °High Surge Capability 2M.83) M IN ° 100 Volts through 600 Volts Types Available

Contextual Info: MZC75TA60U  PRELIMINARY Fast Recovery Epitaxial Diode A -A -PAK MZK75TA60U Ultra-FastTM Speed FRED Features • International standard package With DBC ceramic base plate Planar passivated chips Short recovery time Low switching losses Ultra-soft recovery behaviour

FAST RECOVERY DIODE 200ns

Abstract: MZK 145
Contextual Info: MZC75TS60U  PRELIMINARY Fast Recovery Epitaxial Diode INT -A -PAK MZK75TS60U Ultra-FastTM Speed FRED Features • International standard package With DBC ceramic base plate Planar passivated chips Short recovery time Low switching losses Ultra-soft recovery behaviour

Contextual Info: DIODE MODULE F.R.D. FRS300BA50 UL;E76102 M FRS300BA is a high speed fast recovery isolated diode module designed for high power switching application. FRS300BA is suitable for high frequency application requiring low loss and high speed control. High Speed t rr 200ns

Contextual Info: DIODE MODULE F.R.D. FRS400BA50/60 UL;E76102 M FRS400BA is a high speed fast recovery isolated diode module designed for high power switching application. FRS400BA is suitable for high frequency application requiring low loss and high speed control. High Speed t rr 200ns

Contextual Info: DIODE MODULE F.R.D. FRS300CA50 UL;E76102 M FRS300CA50 is a high speed fast recovery isolated diode module designed for high power switching application. FRS300CA50 is suitable for high frequency application requiring low loss and high speed control. High Speed t rr 200ns