FAST RECOVERY DIODE 20 A Search Results

0640A

Abstract: HA MARKING
Contextual Info: DHG 20 I 600 HA preliminary V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 20 A 40 ns Part number DHG 20 I 600 HA 3 1 Backside: cathode Features / Advantages: Applications:

DHG20I1200PA

Abstract: DHG20I1200HA
Contextual Info: DHG 20 I 1200 PA preliminary V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1200 V 20 A 200 ns Part number DHG 20 I 1200 PA 3 1 Backside: cathode Features / Advantages: Applications:

20ETF

Abstract: 20ETF02 20ETF04 20ETF06 soft recovery rectifier
Contextual Info: 20ETF. Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 20 A FEATURES/DESCRIPTION The 20ETF. fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop.

20ETF12

Abstract: 20ETF 20ETF08 20ETF10 93140
Contextual Info: 20ETF. Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 20 A FEATURES/DESCRIPTION The 20ETF. fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop.

20ETF10FP

Abstract: E78996 20ETF
Contextual Info: 20ETF.FP Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 20 A FEATURES/DESCRIPTION The 20ETF.FP fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop.

Contextual Info: 20ETF.SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 20 A FEATURES/DESCRIPTION Base common cathode + 2 The 20ETF.SPbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage

VR4J

Abstract: TVR4J
Contextual Info: SILICON DIFFUSED TYPE FAST RECOVERY DIODE TVR4J/N HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY • Repetitive Peak Reverse Voltage : Vr rm = 600, 1000V • Average Forward Current : IF(AV) =1.2A(Ta = 55°C) • Reverse Recovery Time : trr=20/^s U nit in mm

Contextual Info: Preliminary Datasheet RJU36B2WDPF 360V - 40A - Dual Diode Ultra Fast Recovery Diode R07DS1136EJ0300 Rev.3.00 Dec 06, 2013 Features • Ultra fast reverse recovery time: trr = 40 ns typ. at IF = 10 A, di/dt = 100 A/ s • Low forward voltage: VF = 1.1 V typ. (at IF = 20 A)

VR2B

Contextual Info: TVR2B,TVR2G,TVR2J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR2B, TVR2G, TVR2J TV Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100 to 600 V • Reverse Recovery Time: trr = 5 to 20 µs

Contextual Info: TVR2B,TVR2G,TVR2J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR2B,TVR2G,TVR2J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100 to 600 V • Reverse Recovery Time: trr = 5 to 20 µs

XA4202

Contextual Info: VRM = 200 V, IF AV = 20 A, trr = 25 ns(max.) Fast Recovery and High Power Diode CTXA-4202S Features Package The CTXA-4202S is a fast recovery diode which realize a peak reverse voltage of 200 V, a typical forward voltage drop of 0.90 V and typical trr of 18 ns

Contextual Info: VRM = 400 V, IF AV = 20 A, trr = 50 ns(max.) Fast Recovery and High Power Diode CTLD-4204S Features Package The CTLD-4204S is a fast recovery diode which realize a peak reverse voltage of 400 V, a typical forward voltage drop of 1.25 V and typical trr of 22 ns

HIGH VOLTAGE DIODE 20kv 1A

Abstract: Pulse generator circuit 20KV DIODE HIGH VOLTAGE DIODE 20kv 20KV TVR-20 0b7b743
Contextual Info: AMERICAN/ELECTRONIC b3E J> • 0b7b743 Q001D15 433 mZT>I HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE—TVR 20 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for

TVR2B

Abstract: toshiba diode "do-41"
Contextual Info: SILICON DIFFUSED TYPE FAST RECOVERY DIODE U nit in mm TV APPLICATIONS. FAST RECOVERY • Average Forward C urrent • Repetitive Peak Reverse Voltage V r r m = 100V~600V • Reverse Recovery Time trr = 5~20,us Ip (AV) = 0.5 A (Ta = 50°C) M A X IM U M RATING

Contextual Info: VS-20ETF.PbF Series, VS-20ETF.-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 20 A FEATURES Base cathode 2 • 150 °C max operating junction temperature • Low forward voltage drop and short reverse recovery time • Designed

Contextual Info: VS-20ETF0…PbF Series, VS-20ETF0…-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 20 A FEATURES • 150 °C max operating junction temperature Base cathode 2 • Low forward voltage drop and short reverse recovery time

Contextual Info: VS-20ETF.PbF Series, VS-20ETF.-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 20 A FEATURES Base cathode 2 • 150 °C max operating junction temperature • Low forward voltage drop and short reverse recovery time • Designed and

Contextual Info: 20ETF.FPPbF Soft Recovery Series Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 20 A FEATURES • The fully isolated package VINS = 2500 VRMS is UL E78996 approved Base cathode • Compliant to RoHS directive 2002/95/EC 2 • Designed and qualified for industrial level

Contextual Info: BYC10-600 Hyperfast power diode 20 September 2012 Product data sheet 1. Product profile 1.1 General description Hyperfast power diode in a SOD59 2-lead TO-220AC plastic package 1.2 Features and benefits • Extremely fast switching • Low reverse recovery current

Contextual Info: PD 9.1451A International IOR Rectifier IRG4BC30FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .

Contextual Info: PD 9.1460A International I R Rectifier IRG4PC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .

Contextual Info: ERE42M-15 5A (1500V / 5A ) Outline drawings, mm FAST RECOVERY DIODE 15.5±0.3 Ø3.2±0.2 5.5±0.3 3±0.3 2.0±0.3 +0.2 1.1-0.1 Damper diode for high definition T.V. and high resolution display Insulated package by fully molding 1 3 20 Min Features 22.0±0.3

ZD 103

Abstract: FS20VSJ-3-A1 FS20VSJ-3-T11 FX20VSJ-3
Contextual Info: FX20VSJ-3 High-Speed Switching Use Pch Power MOS FET REJ03G0273-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive voltage : 4 V VDSS : – 150 V rDS ON (max) : 0.29 Ω ID : – 20 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns

IRG4PC50FD

Contextual Info: PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter