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    FAP DARLINGTON SMD TRANSISTOR Search Results

    FAP DARLINGTON SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    FAP DARLINGTON SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    temperature based speed control of exhaust fan using triac circuit diagram

    Abstract: "OPTIMUM SNUBBERS FOR POWER SEMICONDUCTORS" simple schematic diagram PWM 40a hydrogen EI - 33c TRANSFORMER EI 33c TRANSFORMER General Electric SCR Manual, Fifth Edition, 1972 rectifiers and zener diodes data NCP1200 CROSS REFERENCE pc smps transistor manual substitution RCA Solid state Linear Integrated Circuits 1970s
    Text: HB214/D Rev. 2, Nov-2001 Rectifier Applications Handbook Rectifier Applications Handbook ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does


    Original     		HB214/D Nov-2001 NCP1200 MBRS360T3 MUR160 r14525 HB214/D temperature based speed control of exhaust fan using triac circuit diagram "OPTIMUM SNUBBERS FOR POWER SEMICONDUCTORS" simple schematic diagram PWM 40a hydrogen EI - 33c TRANSFORMER EI 33c TRANSFORMER General Electric SCR Manual, Fifth Edition, 1972 rectifiers and zener diodes data NCP1200 CROSS REFERENCE pc smps transistor manual substitution RCA Solid state Linear Integrated Circuits 1970s PDF

    MG100J2YS40

    Abstract: FAp DARLINGTON TRANSISTOR TOSHIBA IGBT snubber ap 5331 application POWER MOSFET HIG VELOCITY calculation of IGBT snubber P-Channel IGBT TRANSISTOR EN SMD TZ FAp DARLINGTON SMD TRANSISTOR
    Text: TOSHIBA 2. [ 5 ] IGBT Description IGBT Construction 2.1 Chip Construction IGBT Insulated G ate B ipolar T ransistors are devices which combine the high in p u t im pedance and high speed of th e M OSFET w ith the high conductivity characteristics (low sa tu ratio n


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