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    ISL9491ERZ Renesas Electronics Corporation Single Output LNB Supply Voltage Regulator for Satellite Set-Top Box Applications Visit Renesas Electronics Corporation
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    FAIRCHILD TOP MARKING FDJ1032C Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: June 2008 FDJ1032C Complementary PowerTrench MOSFET Features General Description • Q1 –2.8 A, –20 V. ■ Q2 RDS ON = 160 mΩ @ VGS = –4.5 V RDS(ON) = 230 mΩ @ VGS = –2.5 V RDS(ON) = 390 mΩ @ VGS = –1.8 V RDS(ON) = 90 mΩ @ VGS = 4.5 V


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    FDJ1032C FDJ1032C PDF

    FDJ1032C

    Abstract: SU-001 P-Channel 1.8V MOSFET FLMP fairchild top marking fdj1032c SC75 ATIca
    Text: June 2008 FDJ1032C Complementary PowerTrench MOSFET Features General Description • Q1 –2.8 A, –20 V. ■ Q2 RDS ON = 160 mΩ @ VGS = –4.5 V RDS(ON) = 230 mΩ @ VGS = –2.5 V RDS(ON) = 390 mΩ @ VGS = –1.8 V RDS(ON) = 90 mΩ @ VGS = 4.5 V


    Original
    FDJ1032C FDJ1032C SU-001 P-Channel 1.8V MOSFET FLMP fairchild top marking fdj1032c SC75 ATIca PDF

    FDC6020C

    Abstract: fairchild top marking fdj1032c FDJ1032C SC75 P-Channel 1.8V MOSFET FLMP
    Text: FDJ1032C Complementary PowerTrench MOSFET General Description Features These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


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    FDJ1032C FDC6020C fairchild top marking fdj1032c FDJ1032C SC75 P-Channel 1.8V MOSFET FLMP PDF

    300 V 2 A mosfet datasheet

    Abstract: fairchild top marking fdj1032c FDJ1032C SC75 SU-001 1n002 SU-001-01
    Text: FDJ1032C Complementary PowerTrench MOSFET Features General Description • Q1 –2.8 A, –20 V. ■ Q2 RDS ON = 160 mΩ @ VGS = –4.5 V RDS(ON) = 230 mΩ @ VGS = –2.5 V RDS(ON) = 390 mΩ @ VGS = –1.8 V RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V


    Original
    FDJ1032C FDJ1032C 300 V 2 A mosfet datasheet fairchild top marking fdj1032c SC75 SU-001 1n002 SU-001-01 PDF