FAH4 Search Results

Contextual Info: FAH4830 Haptic Driver for DC Motors ERMs and Linear Resonant Actuators (LRAs) Features Description • •         Direct Drive of ERM and LRA Motors The FAH4830 is a high-performance enhanced haptic drive for mobile phone and other hand-held devices.

PWM224

Contextual Info: FAH4840 Haptic Driver for Linear Resonant Actuators LRAs Features Description • • Direct Drive of LRA (Linear Resonant Actuator)    Internal Motor Enable / Disable Input The FAH4840 is a high-performance amplifier for mobile phones and other hand-held devices. The

Linear resonant actuator

Contextual Info: FAH4830 Haptic Driver for DC Motors ERMs and Linear Resonant Actuators (LRAs) Features Description • •         Direct Drive of ERM and LRA Motors The FAH4830 is a high-performance enhanced haptic drive for mobile phone and other hand-held devices.

FAH4820

Contextual Info: FAH4820 Direct Driver for DC Motors ERMs Features Description • Single-Pin Direct-Drive of ERM for Simple Vibration Control •  External Motor Enable/Disable, Vibration Control  Over-Driving Motor Control, Drive ERM Voltage to VDD Rail   

Contextual Info: FAH4830 Haptic Driver for DC Motors ERMs and Linear Resonant Actuators (LRAs) Features Description • •         Direct Drive of ERM and LRA Motors The FAH4830 is a high-performance enhanced haptic drive for mobile phone and other hand-held devices.

Contextual Info: FAH4840 Haptic Driver for Linear Resonant Actuators LRAs Features Description • • Direct Drive of LRA (Linear Resonant Actuator)    Internal Motor Enable / Disable Input The FAH4840 is a high-performance amplifier for mobile phones and other hand-held devices. The

Linear resonant actuator

Contextual Info: FAH4830 Haptic Driver for DC Motors ERMs and Linear Resonant Actuators (LRAs) Features Description • •         Direct Drive of ERM and LRA Motors The FAH4830 is a high-performance enhanced haptic drive for mobile phone and other hand-held devices.

FAN4830

Abstract: linear resonant actuator
Contextual Info: FAH4830 Haptic Driver for DC Motors ERMs and Linear Resonant Actuators (LRAs) Features Description • •         Direct Drive of ERM and LRA Motors The FAH4830 is a high-performance enhanced haptic drive for mobile phone and other hand-held devices.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

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Vybrid Reference Manual

Abstract: TAG 8634 vybrid
Contextual Info: Vybrid Reference Manual F-Series Document Number: VYBRIDRM Rev. 5, 07/2013 Vybrid Reference Manual, Rev. 5, 07/2013 2 Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1 About This Document 1.1 1.2

transistor K526

Abstract: K1531 k526 FBUSNA-K1335 K373 K1093 k1119 SOCKET FLAT HEAD SCREW FKE 10.9 FKS1A-K189 k1335
Contextual Info: hau_umschlag1_06_PDF.indd 1 11.07.2006 10:56:02 Can be used as a node as well as a terminal version due to a switch. Durch Umschalter sowohl als Knoten- als auch als Abschlussversion einsetzbar. hau_umschlag2_06_PDF.indd 2 11.07.2006 11:20:21 hau_umschlag3_06_PDF.indd 3

Contextual Info: MITSUBISHI LSIs DRAM MODULE MH51236XJ-8/ MH51236SXJ-8 FAST PAGE MODE 18874368-BIT(524288-WORD BY 36-BIT)DYNAMIC RAM DESCRIPTION The M H 5 1 2 3 6 X J /S X J is 5 2 4 2 8 8 -w o rd by 3 6 - b it dynamic PIN CONFIGURATION (TOP VIEW) [Both Side] RAM module. This consists o f fo u r industry standard 256K

M5M44400BJ

Abstract: M5M44400BL M5M44400B
Contextual Info: MITSUBISHI LSIs M5M44400BJ,L,TP,RT-5,-6,-7,-8,-5S,-6S,-7S,-8S FAST PAGE MODE 4194304-BIT 1048576-WORD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a family of 1048576-word by 4 -b it dynamic RAMS, •fabricated with the high performance CMOS process, and is ideal fo r large-capacity memory systems where high speed,