FA 5516 Search Results

jrm a55

Abstract: tip 0ff 0401 ANALOG irf 5630 ko 224 4K tantalum capacitors jrm a45 irf 7408 bt 4840 pinout diagram A9F7 29 INCH crt tv FBT pinout chassis 3111 253 3266 2e jrm A45
Contextual Info: PR E FA C E T he IBM P erson al C o m p u te r T ech n ical R eferen ce M anual is designed to pro v id e h ard w are design an d in terfa ce in fo rm atio n . T h is p u b licatio n also provides B asic In p u t O u tp u t S y stem B IO S in fo rm atio n as w ell as p ro g ram m ing su p p o rt m a tter.

MAX15070AAUT

Abstract: MAX15070 MAX15070AA
Contextual Info: 19-5516; Rev 1; 11/11 TION KIT EVALUA BLE IL AVA A 7A Sink, 3A Source, 12ns, SOT23 MOSFET Drivers Features The MAX15070A/MAX15070B are high-speed MOSFET drivers capable of sinking 7A and sourcing 3A peak currents. The ICs, which are an enhancement over MAX5048 devices, have inverting and noninverting

MAX15070A

Abstract: MAX5048 21 PIN ICs MOSFET drivers
Contextual Info: 19-5516; Rev 0; 11/10 TION KIT EVALUA BLE IL AVA A 7A Sink, 3A Source, 12ns, SOT23 MOSFET Drivers Features The MAX15070A/MAX15070B are high-speed MOSFET drivers capable of sinking 7A and sourcing 3A peak currents. The ICs, which are an enhancement over MAX5048 devices, have inverting and noninverting

0,22 j 160 tgl 55163

Abstract: VEB M ik ro e le k tro n ik Scans-048 TGL-200 asterm DSAGER0002 DSAGER00027 TGL 200
Contextual Info: ondensatoren T s c CD c~ t CD c T O Q _ CD Program m übersicht K a p a z itä ts b e re ic h B a u fo rm Typ/TG L 3300 1000 330 1000 38 159 pF - 0,1 //F p F - 0 ,1 f jf pF - 0,022 ,F p F - 0 , 0 2 2 ,F Spannungsre ih e T o le ra n z P rü fkla sse A n w e n d u n g s k la s s e

D 2058

Abstract: RG63B 12-8 BENDIX RG-124 RG-62B
Contextual Info: QWL special arrangements Ever expanding requirements for more complex circuits in ground equipment and elevated altitude applications has prompted Amphenol/Bendix to provide inserts not covered by the MS drawings. Many of these special inserts are also available in alternate keyway positions.

Contextual Info: MITSUBISHI MICROCOMPUTERS .-o« ivca^ r ^ M37736M4BXXXGP rvv&’ sa SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION • In te r ru p ts . The M37736M4BXXXGP is a single-chip microcom puter using the •M ultiple-functio n 16-bit tim e r. 5 + 3

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES

Contextual Info: / T u r m LTC140Q TECHNOLOGY C om plete SO-8,12-Bit 400ksps ADC w ith Shutdown F€OTUR€S DCSCMCTlOn • Complete 12-Bit ADC in SO-8 ■ Single Supply 5V or ±5V Operation ■ Sample Rate: 400ksps ■ Power Dissipation: 75mW Typ ■ 72dB S/(N + D) and -80dB THD at Nyquist

LT1220

Contextual Info: u n m l t c i 4 i ° TECH N O LO G Y 12-Bit, 1.25M sps S a m p lin g A / D C o n v e r te r w ith S h u td o w n F€flTUR€S D C S C M P T IO n • 1.25Msps Sample Rate ■ Power Dissipation: 160mW ■ 71 dB S/ N + D and 82dB THD at Nyquist ■ No Pipeline Delay

Contextual Info: 6 5 ,5 3 6 W O R D x 16 BIT CM O S STATIC RAM DESCRIPTION The T C 551664J is a 1,048,576 bits high speed static random access m em ory organized as 65,536 words by 16 bits using CMOS technology, a n d operated from a single 5-volt supply. T oshiba's CMOS technology and advanced circuit form provide h ig h speed feature.

STK 2028

Abstract: RTL 2832 STK 4133 II gc 7137 ad STK 5333 stk 5392 stk 5490 stk 2265 STK 5474 STK 4197
Contextual Info: Mon Feb 6 10:03:42 1995 Page 1 'MENSCH COMPUTER ROM SOFTWARE' 'IRQVCTRS.ASM-IRQ VECTOR EQUATES FOR WDC65C265' 2500 A.D. 65816 Macro Assembler - Version 5.01g -Input Filename : irom2.asm Output Filename : irom2.obj

LQD 421

Contextual Info: MwT-A3 26 GHz High Gain, Low Noise GaAs FET M ic r o w a v e T ec h n o lo g y Units In |im ► 50 |4 • • • • • • 1.8 dB NOISE FIGURE AT 12 GHZ +20 DBM OUTPUT POWER AT 12 GHZ 11 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAUGOLD GATE

Contextual Info: MwT-15 M ic r o w a v e T 26 GHz High Power GaAs FET echnology -»j 50 p • • • • +24 dBm OUTPUT POWER AT 12 GHz 9.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH ÏF j* | ^ 0 M » » j P _ 75 241 _ 72

u860

Abstract: j650C RF REMOTE CONTROLLER TRANSISTOR D 1978 sn5516 Remote Control Toy Receiver IC 9 Channel u860 ON
Contextual Info: w ’r ~r OCTAL GENERAL P U R P O S E in t c r f a c e SN951618 b u M EETS IEEE STANDARD 4 8 8-1978 GPIB FORM ERLY DESIGNATED SN 55161B J PACKAGE 8-Channel Bidirectional Transceiver (TOP VIEW» Power-Up/Power-Down Protection (Glitch-Free) • Designed to Implement Control Bus

Contextual Info: /T u rre t TECHNOLOGY LTC1286/LTC1298 Micropower Sampling 12-Bit A/D Converters In SO-8 Packages FCOTURCS D € S C R IP T IO n • 12-Bit Resolution ■ 8-Pin SOIC Plastic Package ■ Low Cost ■ Low Supply Current: 250|oA Typ. ■ Auto Shutdown to 1nA Typ.

LT1220

Contextual Info: u n tA ß ltci4i° TECHNOLOGY 12-Bit, 1.25Msps Sampling A/D Converter with Shutdown FCflTURCS DCSCMPTIOn • 1.25M sps Sam ple Rate ■ Power Dissipation: 160mW ■ 71 dB S/ N + D and 82dB THD at Nyquist The LTC 1410 is a 0.65ns, 1.25Msps, 12-bit sampling

Contextual Info: EPITAXX SQE » INC • 3BbQ4Qti GQGG1S0 H H E P X " 7 ^ 4 fcKII A A A ETX 25B High Speed Back-Illuminated InGaAs PIN Photodiode Description: EPITAXX ETX 25B is a small area planar InGaAs photodiode mounted on a ceramic subcarrier. The device is illuminated through the substrate and its very low capacitance allows direct modulation at

PIN Photodiode For CATV Receiver

Contextual Info: ERM723FJ-S High Linearity 860 MHz AM CATV Optical Receiver Module Preliminary Information Features • High linearity InGaAs PIN photodiode ■ Low distortion, low noise GaAs 1C amplifier ■ -65 dBcCSO, -70 CTB at +3 dBm ■ 7 pWA H2 noise equivalent power

2N3417 equivalent

Abstract: 2N2221-2N2222 2N2222A npn transistor transistor 2n5174 IC TC 3588 beta transistor 2N2222 1n9148 2N4424 2N4424 equivalent 2N3416 equivalent
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA rap GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA PNP NPN pnp GET3014 GET3S3B GET3638A GET3638 GET3638A

InGaas PIN photodiode chip

Abstract: EPITAXX EPITAXX 25b InGaas PIN photodiode chip back illuminated InGaAs photodiode 0G001 100C rise time of photodiode ETX 40 EPITAXX etx-25b
Contextual Info: EPITAXX SQE » INC • 33b0H0b GQG01S0 H H E P X " 7 ^ 4 fcHII A A A ETX 25B High Speed Back-Illuminated InGaAs PIN Photodiode Description: EPITAXX ETX 25B is a small area planar InGaAs photodiode mounted on a ceramic subcarrier. The device is illuminated through the substrate and its very low capacitance allows direct modulation at

ETX2000T5

Abstract: ETX3000T5 ETX500T EPITAXX ETX 300 InGaas PIN photodiode, 1550 sensitivity noise diode LARGE SURFACE AREA PHOTODIODE photodiode high responsivity high shunt resistance 1550 epitaxx InGaAs Epitaxx
Contextual Info: E TX 500T, ET X 100 0 T ERi iMAA ETX 2 0 0 0 T 5 , ET X 300 0 T5 m m « Large Area InGaAs Photodiodes Features • Hiqh responsivity at 1300, 1550, and 850 nm. ■ Low dark current for high accuracy ■ High shunt resistance for low noise ■ Linear over wide range of input optical

Contextual Info: u v m _ i b s TECHNOLOGY M ic ro p o w e r D C /D C C o n ve rte r A d ju sta b le a n d Fixed 5V, 12V F€flTUR€S D CSCRIPTIOfl • Operates at Supply Voltages from 2V to 30V ■ Consumes Only 110|oA Supply Current ■ Works in Step-Up or Step-Down Mode

Contextual Info: TPS618 T O SH IB A TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS61 8 Unit in mm PHOTO TRANSISTOR FOR PHOTO INTERRUPTER PHOTOELECTRIC COUNTER 4 POSITION AND ROTATIONAL SPEED SENSOR AUTOMATIC CONTROL UNIT • • + 0 4 . 4 - 0.2 2.4 ± 0.3 Fast response speed

Contextual Info: urm LT1464/LT1465 TECHNOLOGY D u a l/Q u a d M icro p o w e r, 1MHz C -L o a d P ic o a m p e re Bias C u rre n t JFET In p u t O p A m ps F€fflUR€S DcscMpnon • Input Bias Current: 2pA Max LT1464A 20pA Max(LT1464, LT1465) ■ Supply Current per Amplifier: 200pA Max