F9523 Search Results

Contextual Info: F95231 HIGH SPEED DUAL D FLIP-FLOP D E S C R I P T I O N — T h e F 9 5 2 3 1 c o n t a in s tw o m a s t e r / s la v e D ty p e flip -flo p s . T h e in t e r ­ n a l c lo c k is th e O R o f t w o c lo c k in p u ts, o n e c o m m o n to b o th flip - flo p s T h e O R c lo c k

F95231

Contextual Info: F95231 HIGH SPEED DUAL D FLIP-FLOP D E S C R IP T IO N — T h e F95 2 31 c o n ta in s tw o m a s te r /s la v e D ty p e flip -flo p s . T h e in te r ­ n a l c lo c k is th e OR of tw o c lo ck in p u ts , o n e c o m m o n to b o th flip - flo p s T h e OR c lo c k

Contextual Info: F95231 HIGH SPEED DUAL D FLIP-FLOP D E S C R IP T IO N — T h e F 9 5 2 31 c o n ta in s tw o m a s te r /s la v e D ty p e flip -flo p s . T h e in te r ­ n a l c lo ck is th e OR o f tw o c lo ck in p u ts , o n e c o m m o n to b o th flip -flo p s T h e OR c lo c k

irf9520

Abstract: IRF9522 9521z irf9521
Contextual Info: P-CHANNEL POWER MOSFETS IRF9520/9521Z9522/9523 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

f9520

Abstract: GS 9521 irf9520 IRF9520 Samsung IRF9523 9521 ltsj
Contextual Info: P-CHANNEL POWER MOSFETS IRF9520/9521/9522/9523 FEATURES • • • • • • • Lower R ds <on Improved Inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended sale operating area Improved high temperature reliability

f9520

Abstract: irf9520 IRF9520 harris
Contextual Info: h a r r i s IRF9520, IRF9521 IRF9522, F9523 Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 19 9 4 Package F e a tu re s T 0 -2 2 0 A B • -5 A and -6 A , -8 0 V and - 1 00V TOP VIEW • rD S O N = 0 .6 f l and 0 .8 H • Single Pulse Avalanche Energy Rated

Contextual Info: 430B271 0054552 47D • h a f r r i s HAS IR F9520, IRF9521 IR F 9 5 22 , IR F 9 5 23 Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 1 9 9 4 Package Features TO -220A B • -5 A and -6 A , -8 0 V and -1 0 0 V TOP VIEW • rD S O N = 0 . 6 f l a n d 0 . 8 i l

DIODE c336

Abstract: IRF952G k 3919 IRF9521 IRF9523 F9522 diode c331
Contextual Info: INTERNATIONAL R E C T I F I E R H E D | 4055455 QQdflSflE ? | Data Sheet No. PD-9.319F INTERNATIONAL RECTIFIER IO R HEXFET TRANSISTORS IRF952G IRF95S1 IRFS5SS IRFS523 Features: -100 Volt, 0.6 Ohm HEXFET T0-220AB Plastic Package T h e H E X FE T® technology is th e key to International R ectifier’s

IRF9521

Abstract: f9520 IRF9520 Samsung
Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 71134142 DP12S4Ô 5 0 5 « S I I G K P-CHANNEL POWER MOSFETS IRF9520/9521/9522/9523 FEATURES • • • • • • • Lower Rqs o n Improved inductive ruggedness Fast sw itching tim es Rugged poiysilicon gate cell structure