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    F922 4 Search Results

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    F922 4 Price and Stock

    Renesas Electronics Corporation UPD78F9224MC-5A4-A

    IC MCU
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    DigiKey UPD78F9224MC-5A4-A Tray
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    TDK Corporation B43851F9226M

    Aluminum Electrolytic Capacitors - Radial Leaded 400VDC 22uF 20% STD Leads
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    Mouser Electronics B43851F9226M 1,697
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    TDK Corporation B43821F9226M

    Aluminum Electrolytic Capacitors - Radial Leaded 400VDC 22uF 20% STD Leads
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    Mouser Electronics B43821F9226M 1,410
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    Aptiv PLC F922210

    Automotive Connectors 2 way SHIELDPACK HV RCS890 SB
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    Mouser Electronics F922210 10
    • 1 $256.65
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    Radiall R574F92225

    Coaxial Switches SP12T TermRamses SMA 18GHz Ltch Self-CO AutoReset Ind. 12Vdc TTL Diode Dsub con
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    Mouser Electronics R574F92225
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    F922 4 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 12341567689A58BC4DE5 1 1 5 2 2 2 %1 %1 %1 %1 %1 %1 %1 44C4246F428 -119&&(1":2 ;626F724006F64F9*2C22<(=2


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    12341567689A58BC4DE5 5D9225 724006F64 B2E55 5D8325 23454167889ABC1 1234567289A52AB65C8DE8F 81DEFF PDF

    TOSHIBA 2SA1553

    Abstract: f922 2SA1553 TOSHIBA 2SA1553 F-922 2-21F1A T-978 10Q25 ic 001 IC f 922
    Text: 06-22-04 10:06 T O SH IB A P.002/005 T-9T8 FROM- ¿ ä A TE C H N IC A l DATA F-922 I S IL IC O N PNP TRIPLE DIFFUSED T Y P E 25 A l 553 POWER AMPLIFIER APPLICATIONS. U n it itl mm 2 0 , 5 MAX, C om plem entary to 2SC4Q29 Recommend for 120W H igh F iderity Audio Frequency Am plifier


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    T-978 F-922 2SC4Q29 2-21F1A CHA2SA1553 2SA1553 2SA1553) 2SA1553 TOSHIBA 2SA1553 f922 2SA1553 TOSHIBA T-978 10Q25 ic 001 IC f 922 PDF

    B688

    Abstract: No abstract text available
    Text: 12341567689A58BC4DE5 1 1 2 2 2 2 %1 %1 %1 %1 %1 %1 %1 %1 %1 


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    12341567689A58BC4DE5 12598D 2D42C 724116F64 C116F64 29E48 1C7792 776H452 1C772 B688 PDF

    TAG 8602

    Abstract: F923 F946 F933 MC68HC811A2 f935 F954 tk 1838 f953 f922
    Text: MOTOROLA Order this document by ANE415/D SEMICONDUCTOR APPLICATION NOTE ANE415 M C68HC11 Implementation of IEEE-488 Interface for DSP56000 M onitor Prepared by: Richard Soja and Mark Maiolani, Motorola Semiconductors Ltd, East Kilbride, Scotland This application note describes the implementation of an


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    ANE415/D ANE415 MC68HC11 IEEE-488 DSP56000 IEEE-488 HP9836 TAG 8602 F923 F946 F933 MC68HC811A2 f935 F954 tk 1838 f953 f922 PDF

    pin diagram of full adder using Multiplexer IC

    Abstract: tr f422 UPD65000 fj01 F713 f422 F715 PD65080 F-661 F-642
    Text: N E C ELECTRONICS INC 7 5 D E ] b4E75B5 ODDfiBlfi 3 SEC NEC Electronics Inc. T-42-11 09 % ¿tPD65000 CMOS-3 SERIES cm os g a te a r r a y s 2 -m ic ro n January 1985 Description The//PD65000 (CMOS-3) series of gate arrays are lowpower, high-speed devices featuring 2-micron silicon


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    b4E75B5 T-42-11 uPD65000 NECEL-000246-0185 pin diagram of full adder using Multiplexer IC tr f422 fj01 F713 f422 F715 PD65080 F-661 F-642 PDF

    F422

    Abstract: transistor f422 PD65010 F922 F962 F715 F981 IC pd65000 F746 F744
    Text: N E C ELECTRONICS INC 72 NEC N E C Electronics Inc. DE I b427525 000Ö275 □ | T-4 2-1 1 -0 9 //PD65000 CMOS-2 S E R IE S 3-MICRON CMOS GATE A R R A YS c April 1985 Description Figure 1. C M O S Gate Array Chip Layout Figure 2. Cell Configured as a Two-Input


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    b427525 uPD65000 The//PD65000 T-42-11-09 //PD65000 //PD65003 juPD65002 fiPD65010 juPD65020 F422 transistor f422 PD65010 F922 F962 F715 F981 IC pd65000 F746 F744 PDF

    upd6500

    Abstract: F922 uPD65007 F981 IC tr f422 F661 CMOS GATE- NEC f422 f962 f791
    Text: SEC CMOS-4L 1.5-M ICRON LOW-VOLTAGE CMOS GATE ARRAYS NEC Electronics Inc. February 1990 Description Figure 1. Sample CMOS-4L Packages NEC’s CMOS-4L family of 1.5-micron gate arrays are high-density, low-voltage application-specific integrated circuits ASICs that offer unique solutions for batterydriven circuits. Supply voltages ranging from 1.0 V to 5.5


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    PDF

    FCN950

    Abstract: FC95-22 422B1275 FCN950 UNDERFREQUENCY FCN950-2 FC95-2 NF92-3 BBC Undervoltage relay FC95-1 NF92-2
    Text: t i fi18, M m ' Types FCN, -81 and RXFE im d b 08007-e n Page 1 March 1992 Changed since August 1990 Data subject to change without notice Frequency relays ABB Network Control & Protection FCN Features Application BBC 204420C FCN •Tw o or four stages


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    imdb08007-en March1992 204420C) 422D1275 422D1225 422D1295 422D1285 422D1255 16D422B 422C1276 FCN950 FC95-22 422B1275 FCN950 UNDERFREQUENCY FCN950-2 FC95-2 NF92-3 BBC Undervoltage relay FC95-1 NF92-2 PDF

    F483

    Abstract: f422 b0w4 NEC VOLTAGE COMPARATOR IC LIST F-637
    Text: SEC V CMOS-5R 1.2-MICRON CMOS GATE ARRAYS NEC Electronics Inc. PRELIMINARY January 1990 Description Figure 1. Package Photo N EC 's C M O S -5R fa m ily com bines preconfigured static RAM blocks w ith a standard gate array architecture. By integrating m em ory and gate array logic on a single IC, the


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    16k-bit 64k-bit IP-8001 F483 f422 b0w4 NEC VOLTAGE COMPARATOR IC LIST F-637 PDF

    Digital IC CMOS 16x1 mux

    Abstract: PART NUMBERING NEC IC DECODER ic tba 810 f34 function generator 80c42 F981 IC NEC VOLTAGE COMPARATOR IC LIST 3volt inverter 765 floppy disk controller 16x1 mux
    Text: b42?525 00437T3 TTT « N E C E |^ | 1^1 t w C B-C7, 3-VO LT 0.8-M IC R O N c e l l - b a s e d c m o s a s ic NEC Electronics Inc. C Preliminary Description The CB-C7,3-volt cell-based product family is intended for low power portables and battery-operated products. A


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    00437T3 V30HL 16-bit NA80C42H NA8250 Digital IC CMOS 16x1 mux PART NUMBERING NEC IC DECODER ic tba 810 f34 function generator 80c42 F981 IC NEC VOLTAGE COMPARATOR IC LIST 3volt inverter 765 floppy disk controller 16x1 mux PDF

    NEC 2561

    Abstract: transistor f422 transistor f423 nec 2561 equivalent transistor f422 equivalent transistor NEC D 882 p verilog code for 8254 timer TBA 931 nec d 882 p datasheet nec 2561 datasheet
    Text: CB-C7, 3-VOLT 0.8-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. Preliminary October 1993 Description Figure 1. Integrated HDD Solution with CB-C7 Cell-Based ASIC and Embedded Megafunctions The CB-C7, 3-volt cell-based product family is intended for low power portables and battery-operated products. A


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    CMOS-6A

    Abstract: F223 65630 F304 f422 F501 MOS l442 bt08 700201 L421 Marking
    Text: NEC CM OS-6/6 A 1.0-MICRON CMOS g a t e a r r a y s NEC Electronics Inc. PRELIM INARY Description February 1990 Figure 1. Sample CMOS-6 Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A are ultra-high performance, sub-micron channel length CM OS p ro du cts crea ted fo r h ig h -in te g ra tio n A S IC


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    IP-8090 CMOS-6A F223 65630 F304 f422 F501 MOS l442 bt08 700201 L421 Marking PDF

    bv0T

    Abstract: 658X
    Text: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per­


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    b4E75S5 QQ3T701 nPD658xx bv0T 658X PDF

    transistor f422

    Abstract: transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f
    Text: N E C ELECTRONICS INC b7E D NEC NEC Electronics Inc. I b *427525 Q D 3 ci 7 n bTD « N E C E CMOS-8LCX 3-VOLT, O.5O-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT Prelim inary Description O c to b e r 1 9 9 3 Figure 1. Various CMOS-8LCX Packages N EC 's 3-volt C M O S -8L C X family consists of ultra-high


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    xPD658xx transistor f422 transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f PDF

    D65842

    Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
    Text: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform­ ance, sub-micron gate arrays, targeted for applications


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    jPD65800 D65842 diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys PDF

    D65806

    Abstract: No abstract text available
    Text: W So 1393 C M O S -8 5 -V O L T , 0 .6 5 -M IC R O N CM OS GATE ARRAYS NEC NEC Electronics Inc. April 1993 Description Figure 1. Sample CMOS-8 Packages NEC’s 5-volt CMOS-8 family are ultra-high performance, s u b -m ic ro n gate a rra y s , ta rg e te d fo r a p p lic a tio n s


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    65-micron D65806 PDF

    8251a usart interface from z80

    Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
    Text: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn


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    L4E75BS 80C42H D043fl23 8251a usart interface from z80 UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4 PDF

    D65806

    Abstract: 9215K1
    Text: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications


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    65-MICRON xPD65800 D65806 9215K1 PDF

    nec 2561 equivalent

    Abstract: f bj04 TBA 931 765 floppy disk controller 78K3 L435 f305 F423 nec 2401 bg05
    Text: CB-C7, 5-VOLT 0.8-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. August 1993 Description CB-C7 cell-based product family is a 0.8-micron drawn process with two- or three-layer metalization and is offered in 22 I/O pad ring step sizes. It is ideal for applications such


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    J18M

    Abstract: itt 2222 marking code F302 L-423 d 65632 "Single-Port RAM" marking L442 em 288 NEC uPD 65658 RU4D
    Text: <S *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CM OS-6V and CMOS-6X are ultra-high perform ­


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    bv0T

    Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
    Text: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high


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    50-MICRON PD658xx bv0T F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d PDF

    transistor f422

    Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
    Text: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for


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    50-MICRON PD658xx transistor f422 transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe PDF

    bv0T

    Abstract: bv0e NEC L213 FO09B2 f57a EB S913 l914 F204A L462 D1H01
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PD6782X PD6783X A11957XJ2V0UM00 bv0T bv0e NEC L213 FO09B2 f57a EB S913 l914 F204A L462 D1H01 PDF

    bv0T

    Abstract: L442 S964 yn 1018 f57a S774 5 input nand gate TB 1226 EN NEC 2705 L-6034
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PD6782X PD6783X A11957XJ2V1UM00 bv0T L442 S964 yn 1018 f57a S774 5 input nand gate TB 1226 EN NEC 2705 L-6034 PDF