F7 TRANSISTOR Search Results

TLN103

Abstract: TLN108 TPS605LB
Contextual Info: Photo Transistor - F7 Transistor Type Classification Type N a Package S TPS601A TPS604 Metal To-18 TPS614 05 D O O O Electro-optical Characteristics Ta=25“C MIN (MA) 100 SK o TPS610 7 (dge) V ce MAX (V) Vistole Light

TLP121-4

Abstract: tlp120 smd TLP112A
Contextual Info: Mini Flat Photocouplers SMD Photocouplers Transistor Output_ F7 Collector Breakdown Votage V(BR)CEO(V) Current Transfer Ratio Type No. Pin Configuration Features TLP121 4 ch Type TLP120 AC input £ TLP120-4 GB BV (mA) (V) 80 100 600 100 1200 200

TLRA280

Abstract: TLP1007A TLRC280
Contextual Info: Photo interrupters P hoto IC O utput F7 Electro-optical Characteristics (Ta=25°C) Classification Photo IC Output Type No. Output Level (With Light) TLP1000A “H” TLP1001A “L" TLP1002A “H” TLP1003A “L” TLP1004A “H” TLP1005A “L” TLP1006A

Contextual Info: DMA26402 Silicon PNP epitaxial planar type Unit: mm For digital circuits • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: F7  Basic Part Number

CIMRF7Z4011

Contextual Info: Y203-EN2-01.book Seite 253 Montag, 29. März 2004 12:52 12 CIMR-F7Z Varispeed F7 Frequency inverter for full flux vector control Current Vector Control with or without PG Torque Control PID Control Standard LCD operator Fieldbus options: DeviceNet, Profibus, CANOpen

TLP850

Abstract: TLP1240 TLP852 TLP851 TLP807 TLP809 TLP8 TLP1225 TLP1230
Contextual Info: F7 Electro-optical Characteristics Ta-25*C Classification Photo Darlington Transistor Output VCE MAX (V) lo MAX (nA) 250 Typ« No. Gap (mm) Slit Width (mm) lF(mA) V ce(V) TLP507A 3 1 30 10 2 30 TLP850 5 1 40 10 2 30 250 TLP851 5 0.5 20 10 2 30 250 MIN TLP852

TC124E

Abstract: DTC124ES
Contextual Info: DTC124EU/DTC124EK/DTC124ES/DTC124EF DTC124EL/DTC124EA/DTC124EV h ~p> v 7. $ / I ransistors D TC 124EU /D TC 124EK/D TC 124ES D TC 124EF/D TC 124EL/D TC 124EA DTC124E V 7sv 2Jl'h -7> 7 7 F7 > v 7 9 h 7 y ^/ Tr ansi st or Switch Digital Transistors Includes Resistors)

CIMR-F7Z40151

Contextual Info: Y203-EN2-02-Katalog.book Seite 269 Mittwoch, 24. Mai 2006 2:22 14 CIMR-F7Z Varispeed F7 The industrial workhorse • • • • • • • • • • • Flux vector control with or without PG Silent operation. No current de-rating in silent mode. Torque control

DTC114WS

Contextual Info: DTC114WU/DTC114WK/DTC114WS/DTC114WF DTC114WL/DTC114WA/DTC114WV Is ~7 > v 7. $ / T ransistors DTC114W U /D TC 114W K /D TC 114WS D TC 114W F/D TC 114W L/D TC 114WA DTC114W V ^-/Transistor Switch Digital Transistors Includes Resistors • f7 • $\-MT f& H /D im e n s io n s (Unit : mm)

2SA675

Abstract: t430 transistor t430 T591 PA33 ss-3r
Contextual Info: SEC j Iïf/\f7 J '> y = ]> h Silicon Transistor 2SA675 P N P X f c f v T J U J K v U =i > h -7 > v * £ Si PNP Silicon Epitaxial Transistor Fluorescent Indicator Pannel Driver 2 SA 675 i, tîIIÊ fli: £ f i f z sE — Jl' F h ? ^121/PACKAGE DIMENSIONS T% Ë E ^ 'iS î ^ £

Contextual Info: In r Com I¡near Corporation 000674 i 0 f7 ? /tC £ o . Fast Settling, Wideband High Voltage Op Amps CLC210AI, CLC210AM MIL-STD-883B APPLICATIONS: FEATURES: • • • • • ± 3 0 V ou tp u t drive capability • -3 d B bandw idth of 50MHz precision, high speed D to A conversion

RCA-CDP1873C

Contextual Info: C M O S Peripherals .403 Advance Information/ Preliminary Data CDP1873C TERMINAL ASSIGNMENT CMOS 1 of 8 Binary Decoder vss — "1 2 3 4 5 6 7 6 s-J 16 15 14 13 12 II 10 9 1 — — — — — — — — — — — — — — s > AO Ai A2 F7 E2 E3 OUT 7

sa0565

Abstract: BAIF4M BA1F4M
Contextual Info: r IV E C ^?T/\f7 ir S * S'—b a-g-h^ Compound Transistor BA1 F4M i£StrtlNPNxti?*'>7rJU •' m m ★ o T x iS f it £ L T ^ £ -to 4.0 ±0.2 6” R i = 22 k fi, R 2= 22 k f i ) 2 6’ -0.50 O B N 1 F 4 M £ =7 > 7 °'J / > ? U « ^ i # ( T a = n 25 °C )

bTI51

Abstract: fsjc F4CJ 2SJ209 TF230
Contextual Info: 5s—S ,T NEC • 2/— f~~ M O S Field Effect Transistor A l? r / v f7 2SJ209 MOS FET X ' f ' y & 2 S J 2 0 9 l i P f - ^ ^ ^ * i ^ M O S FETT", 5 < fc > yt > ^M O S FET 7 M ? T f F R K 2.8 ±0.2 t o IÌ.X4 "/r &0, t ' ^ / K U S S - 1.5 L T ^ iiT 't o I-

JT MARKING

Abstract: X108 a3JE 0834 JE 720 transistor HJK MARKING
Contextual Info: 7 s— S • 5/— K Compound Transistor F A IF4N rt/itN P N i fc“? * :>T «F 'J 3 V F7 v i* ;* ? Ì2HI W Ì • mm » o xN'^f r XÌÈÌTL £ 1*1/1 t X ^ £ -to 2 .8 + 0 .2 (R i = 22 kQ, R2= 47 kQ) 0 .6 5 ig ;ls 1 .5 C J _ o FN1F4N ¿; n > 7° U / > ? ij T ig ffl

Contextual Info: h 7 > y ^ $ / T ransistors g 2 Q 1 2 2 8 M e 1 ^ u N P N ^ 1 3 > h ^ > 7 * rfjiE S /D im e n sio n s Unit : mm t t * 1) VCE ( sa. is ^ 7 Epitaxial Planar NPN Silicon Transistor Power Amp. Z S D Io O O • 2SD1228M/2SD1860 X -f7 f iz'iM b X o 9 0 m V (T y p .) ( I c = 1 5 0 m A l B = 1 5 m A )

CLC210AM

Abstract: CLC210AI CLC200
Contextual Info: In r Com I¡near Corporation £ ~ f2 3 /g Ç > 000674 i W s 0<f7Ÿ/t£€o . Fast Settling, Wideband High Voltage Op Amps CLC210AI, CLC210AM MIL-STD-883B APPLICATIONS: FEATURES: • p re c isio n , high sp e e d D to A con version • g ra p h ic C R T c o m p o s ite video d rive a m p

7H diode

Abstract: IPA50R140CP DIODE marking ED X9 diode marking BEM LM7m
Contextual Info: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W 4 EHB: M ?: ; 8;IJ/ =L"a`# ?D 1,   W EM ;IJ<?=KH; E<C ;H?J/ , + N . Y V !0 8M\_Sj .) O R =L"a`#%_Sj )'*-) " -1 `< Q Y%fkb W 2 BJH7 BEM =7J ; 9>7H=; W " NJH;C ; : L : JH7J;: W % ?=> F;7A 9KHH;DJ97F78?B?JO

DFJI

Abstract: JG marking diode EZD transistor 7g
Contextual Info: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V *EL;HI<?=JG; E<C ;G?I0 - , M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * -33 " +1 `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9

diode EZD

Abstract: diode AY 101
Contextual Info: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V฀*EL;HI฀<?=JG;฀E<฀C;G?I฀0-,฀M฀/Y V฀3BIG7฀BEL฀=7I;฀9>7G=; V"1฀9N\_Si //* P R>M#a`$&_Si * -33  +1 `= QY&ejb V฀#MIG;C;฀:K :I฀G7I;: V฀&?=>฀F;7A฀9JGG;DI฀97F78?B?IN

h7d marking

Contextual Info: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W฀4EHB:M?:;฀8;IJ฀/ =L"a`#฀?D฀1, W฀ EM;IJ฀<?=KH;฀E<฀C;H?J฀/,+฀N฀.Y V !0฀8M\_Sj .) O R =L"a`#%_Sj )'*-)  -1 `< Q Y%fkb W฀2BJH7฀BEM฀=7J;฀9>7H=; W฀"NJH;C;฀:L :J฀H7J;:

JG Diode

Abstract: diode EZD jg transistor T1027 f7 transistor MARKING 7C DIODE marking 7b PG-TO252-3 transistor 7g
Contextual Info: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V *EL;HI<?=JG; E<C ;G?I0 IH M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * /,* " +- `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9

diode AY 101

Abstract: IPD50R520CP
Contextual Info: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V฀*EL;HI฀<?=JG;฀E<฀C;G?I฀0IH฀M฀/Y V฀3BIG7฀BEL฀=7I;฀9>7G=; V"1฀9N\_Si //* P R>M#a`$&_Si * /,*  +- `= QY&ejb V฀#MIG;C;฀:K :I฀G7I;: V฀&?=>฀F;7A฀9JGG;DI฀97F78?B?IN

Contextual Info: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V *EL;HI<?=JG; E<C ;G?I0 - , M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * -33 " +1 `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9