NAND Flash
Abstract: No abstract text available
Text: ESMT F59D1G81A / F59D1G161A Flash 1 Gbit 128M x 8/ 64M x 16 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit
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F59D1G81A
F59D1G161A
16bit
NAND Flash
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F59D1G81A
Abstract: 1G NAND flash Elite Semiconductor Memory Technology nand
Text: ESMT F59D1G81A Flash 1 Gbit 128M x 8 1.8V NAND Flash Memory FEATURES z z z z z z z Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte
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Original
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PDF
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F59D1G81A
1bit/528Byte
F59D1G81A
1G NAND flash
Elite Semiconductor Memory Technology nand
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Untitled
Abstract: No abstract text available
Text: ESM T F59D1G81A Flash 1 Gbit 128M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte
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Original
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PDF
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F59D1G81A
250us
1bit/528Byte
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