F422
Abstract: F423 F421 F-423 ir f422 UFNF422
Contextual Info: UNITRODE CORP 9347963 TS UNITRODE CORP DE 1 ^ 3 4 7 ^ 3 92D 10875 UFNF420 UFNF421 UFNF422 UFNF423 POWER MOSFET TRANSISTORS 500 Volt, 3.0 Ohm FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability
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D01Gfl75
UFNF420
UFNF421
UFNF422
UFNF423
UFNF423
F422
F423
F421
F-423
ir f422
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tr f422
Abstract: F422 F423 UFNF422 ufnf420 F421
Contextual Info: POWER MOSFET TRANSISTORS [J ™? 500 Volt, 3.0 Ohm UFNF422 UFNF423 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rdsioih and a high transconductance. FEATURES • Fast Switching
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UFNF422
UFNF423
UFNF420
UFNF421
tr f422
F422
F423
F421
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f422
Contextual Info: BF420 BF422 SILICON EPITAXIAL TRANSISTORS N-P-N tra n s is to rs in p la s tic T O -9 2 p a c k a g e p r im a r ily in te n d e d f o r class-B v id e o o u tp u t stages in c o lo u r te le v is io n and p ro fe s s io n a l m o n ito r e q u ip m e n t. P-N-P c o m p le m e n ts are B F 4 2 1 and B F 4 2 3 .
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BF420
BF422
f422
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MRF485
Abstract: MRF477 Motorola transistors MRF475 Motorola transistors MRF485 MRF466 MRF476 Motorola transistors MRF477 UHF-800 mrf464 MRF475
Contextual Info: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de signed for operation in RF Power Amplifiers. These transistors
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Distorti1-11
MRF421
MRF475
O-22GAB
MRF412
IMRF410
MRF485
MRF401
45A-09
MRF426
MRF477
Motorola transistors MRF475
Motorola transistors MRF485
MRF466
MRF476
Motorola transistors MRF477
UHF-800
mrf464
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IRF423
Abstract: ir*420 SM 3117 circuit diagram IRF420 IRF421 IRF422
Contextual Info: Standard Power MOSFETs IRF420, IRF421, IRF422, IRF423 File N u m b e r 1571 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 2.0A and 2.5A, 450V-500V rDs on = 3.0 O and 4.0 fi Features:
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IRF420,
IRF421,
IRF422,
IRF423
50V-500V
IRF422
IRF423
IF422
ir*420
SM 3117 circuit diagram
IRF420
IRF421
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MRF485
Abstract: mrf477 MRF475 MRF476 Motorola transistors MRF476 Motorola transistors MRF475 Motorola transistors MRF455 MRF466 MRF455 MRF460
Contextual Info: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de signed for operation in RF Power Amplifiers. These transistors
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MRF476
T0-220AB
MRF453
MRF455/A
MRF454
MRF475
MRF449
MRF450/A
MRF497
O-220AB
MRF485
mrf477
Motorola transistors MRF476
Motorola transistors MRF475
Motorola transistors MRF455
MRF466
MRF455
MRF460
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SOT 86 MARKING 03
Abstract: transistor bf 422 41 BF transistor BF420S transistor bf 422 NPN BH Rf transistor BF 422 92Z MARKING CODE SBF422 BF422S
Contextual Info: I TELEFUNKEN ELECTRONIC 1 ?E D m ß^GDTb DDG^MOB 1 BF 420 S • BF 422 S TIILKPtM iN ] electronic Crtaliv« Ttchootoo« r - Silicon NPN Epitaxial Planar RF Transistors 3 / - * 3 Applications: Video B-class power stages in TV-receivers .Features; • B F4 2 0 S complementary to BF 421 S
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BF420S
T0126
15A3DIN
SOT 86 MARKING 03
transistor bf 422
41 BF transistor
BF420S
transistor bf 422 NPN
BH Rf transistor
BF 422
92Z MARKING CODE
SBF422
BF422S
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MRF245
Abstract: PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94
Contextual Info: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications D M E /IFF/TAC A N puisées, classe C TYPE PACKAGE CONFIG. V cc V SD 1528 .280 4L STU D (A) S D 1528-1 .280 4LSL (A) S D 1528-8 .250 2LFL HERM SD 1530 .280 4L STU D (A) SD 1530-1
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CB-403)
CB-410)
CB-303)
CB-4111
CB-306)
CB-407)
1CB-404)
CB-408)
CB-409)
52N6082
MRF245
PT8828
BFY70
J0303
CM-501
sd1238
2N6096
RF Transistor S10-12
2N4932
BLY94
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mrf245
Abstract: SD1416 PT9788 PT8710 2N5642 BLY94 PT8811 BLX66 PT8740 2N4072
Contextual Info: 88. 108 MHz class C for FM tansmitters émetteurs/réémetteurs FM, classe C TYPE SD 1457 SD 1460 PACKAGE CONFIG. Vcc CE CE 28 28 . 500 4LFL . 500 4LFL Pout W (V) > THOMSON-CSF fo (MHz) Pin (W) Gp (dB) (% ) 108 108 7,5 20 > 10 9 75 75 75 160 r!c .380 4L FL
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SD2N6082
BM80-12
SD1416
MM1601
MRF631
SD1144
PT8549
SD1214
N5054
2N3553
mrf245
PT9788
PT8710
2N5642
BLY94
PT8811
BLX66
PT8740
2N4072
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2N918
Abstract: SD1076 PT8811 MRF245 RF Transistor S10-12 PT8828 PT8710 sd-1076 PT9780 transistor pt4544
Contextual Info: 130. 175 MHz class C for FM mobile applications p\ communications mobiles FM, classe C TYPE PACKAGE CONFIG. V cc V .280 4LSL (B) XO-72 SL TO-117 SL .280 4LSL (B) .280 4LSL (B) CE CE CE CE CE 7,5 7,5 7,5 7,5 7,5 2N 4427 SD 1484-10 SD 1127 2N 6080 SD 1574
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BAM20
22N6082
BM80-12
SD1416
MM1601
MRF631
SD1144
PT8549
SD1214
N5054
2N918
SD1076
PT8811
MRF245
RF Transistor S10-12
PT8828
PT8710
sd-1076
PT9780
transistor pt4544
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BFY70
Abstract: PT8828 CM45-12A THB598 PT8811 BLY22 sd1451 MRF245 PT8710 PT9780
Contextual Info: wideband VHF - UHF class C for E C M and radio links applications applications large bande VHF-UHF, classe C, contre mesure et faisceaux hertziens PACKAGE TYPE C O NFIG. Pout Frequency Pin range W (W) (M Hz) Vcc (V) 1H0MS0N-CSF GP min (dB) m in (% ) m ax
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2N6082
BM80-12
SD1416
MM1601
MRF631
SD1144
PT8549
SD1214
N5054
2N3553
BFY70
PT8828
CM45-12A
THB598
PT8811
BLY22
sd1451
MRF245
PT8710
PT9780
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f422
Abstract: transistor f422 F981 IC F421 4-bit even parity using mux 8-1 transistor f421 transistor f423 4-bit odd parity using mux 8-1 F423 PD65003
Contextual Info: NEC NEC Electronics Inc. /¿ P D 6 5 0 0 0 C M O S -2 SER IES 3-M IC R O N CM OS G A T E A R R A Y S April 1985 D e sc rip tio n The/iPD65000 (CMOS-2) series of gate arrays are lowpower, high-speed devices featuring 3-mlcron silicon gate CMOS technology. The basic cell on the chip
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uPD65000
//PD65003
juPD65002
fiPD65010
juPD65020
16-Pin
18-Pin
20-Pin
24-Pin
28-Pin
f422
transistor f422
F981 IC
F421
4-bit even parity using mux 8-1
transistor f421
transistor f423
4-bit odd parity using mux 8-1
F423
PD65003
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F422
Abstract: transistor f422 PD65010 F922 F962 F715 F981 IC pd65000 F746 F744
Contextual Info: N E C ELECTRONICS INC 72 NEC N E C Electronics Inc. DE I b427525 000Ö275 □ | T-4 2-1 1 -0 9 //PD65000 CMOS-2 S E R IE S 3-MICRON CMOS GATE A R R A YS c April 1985 Description Figure 1. C M O S Gate Array Chip Layout Figure 2. Cell Configured as a Two-Input
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b427525
uPD65000
The//PD65000
T-42-11-09
//PD65000
//PD65003
juPD65002
fiPD65010
juPD65020
F422
transistor f422
PD65010
F922
F962
F715
F981 IC
pd65000
F746
F744
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upd6500
Abstract: F922 uPD65007 F981 IC tr f422 F661 CMOS GATE- NEC f422 f962 f791
Contextual Info: SEC CMOS-4L 1.5-M ICRON LOW-VOLTAGE CMOS GATE ARRAYS NEC Electronics Inc. February 1990 Description Figure 1. Sample CMOS-4L Packages NEC’s CMOS-4L family of 1.5-micron gate arrays are high-density, low-voltage application-specific integrated circuits ASICs that offer unique solutions for batterydriven circuits. Supply voltages ranging from 1.0 V to 5.5
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pin diagram of full adder using Multiplexer IC
Abstract: tr f422 UPD65000 fj01 F713 f422 F715 PD65080 F-661 F-642
Contextual Info: N E C ELECTRONICS INC 7 5 D E ] b4E75B5 ODDfiBlfi 3 SEC NEC Electronics Inc. T-42-11 09 % ¿tPD65000 CMOS-3 SERIES cm os g a te a r r a y s 2 -m ic ro n January 1985 Description The//PD65000 (CMOS-3) series of gate arrays are lowpower, high-speed devices featuring 2-micron silicon
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b4E75B5
T-42-11
uPD65000
NECEL-000246-0185
pin diagram of full adder using Multiplexer IC
tr f422
fj01
F713
f422
F715
PD65080
F-661
F-642
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F483
Abstract: f422 b0w4 NEC VOLTAGE COMPARATOR IC LIST F-637
Contextual Info: SEC V CMOS-5R 1.2-MICRON CMOS GATE ARRAYS NEC Electronics Inc. PRELIMINARY January 1990 Description Figure 1. Package Photo N EC 's C M O S -5R fa m ily com bines preconfigured static RAM blocks w ith a standard gate array architecture. By integrating m em ory and gate array logic on a single IC, the
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16k-bit
64k-bit
IP-8001
F483
f422
b0w4
NEC VOLTAGE COMPARATOR IC LIST
F-637
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CMOS-6A
Abstract: F223 65630 F304 f422 F501 MOS l442 bt08 700201 L421 Marking
Contextual Info: NEC CM OS-6/6 A 1.0-MICRON CMOS g a t e a r r a y s NEC Electronics Inc. PRELIM INARY Description February 1990 Figure 1. Sample CMOS-6 Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A are ultra-high performance, sub-micron channel length CM OS p ro du cts crea ted fo r h ig h -in te g ra tio n A S IC
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IP-8090
CMOS-6A
F223
65630
F304
f422
F501 MOS
l442
bt08
700201
L421 Marking
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65630
Abstract: RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442
Contextual Info: *,yt * *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform
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IEU-7922,
IP-8090
65630
RK4B
83nr-7843b
ru4f
RJ49
RJ4B
NEC uPD 65658
transistor f423
F423
L442
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ru4f
Abstract: F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425
Contextual Info: *,yt * *W¿ NEC NEC Electronics Inc. C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform
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IEU-7922,
IP-8090
ru4f
F422
F423
rj8b
"Single-Port RAM"
TT 2246
RU89
BE09
L737
f425
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D65842
Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
Contextual Info: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform ance, sub-micron gate arrays, targeted for applications
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jPD65800
D65842
diode ru4d
136-Pin
CMOS7
BV09
180 nm CMOS standard cell library Synopsys
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D65806
Contextual Info: W So 1393 C M O S -8 5 -V O L T , 0 .6 5 -M IC R O N CM OS GATE ARRAYS NEC NEC Electronics Inc. April 1993 Description Figure 1. Sample CMOS-8 Packages NEC’s 5-volt CMOS-8 family are ultra-high performance, s u b -m ic ro n gate a rra y s , ta rg e te d fo r a p p lic a tio n s
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65-micron
D65806
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D65806
Abstract: 9215K1
Contextual Info: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications
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65-MICRON
xPD65800
D65806
9215K1
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PDF
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J18M
Abstract: itt 2222 marking code F302 L-423 d 65632 "Single-Port RAM" marking L442 em 288 NEC uPD 65658 RU4D
Contextual Info: <S *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CM OS-6V and CMOS-6X are ultra-high perform
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transistor f422 equivalent
Abstract: transistor f422 thomson CRT COLOUR TV SCHEMATIC DIAGRAM z80 ef9345 EF9345 TDA 9345 EF9367 TGS 813 difference between intel 8085 and motorola 6800 EF9345P
Contextual Info: GRAPHIC PROCESSORS DATABOOK 1st EDITION MARCH 1989 TABLE OF CONTENTS INTRODUCTION Page 4 GENERAL INDEX 5 PRODUCT GUIDE 7 ALPHANUMERICAL and SEMI-GRAPHIC CRT CONTROLLERS 11 GRAPHICS CONTROLLERS 105 COLOR PALETTE 213 APPLICATION NOTES 247 3 INTRODUCTION The SGS-THOMSON Graphics data book contains comprehensive data on three
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