F25 TRANSISTOR Search Results

ultrasonic plastic welder circuit

Abstract: MP-F25
Contextual Info: I MP-F FIBER SELFCONTAINED-DC TYPE Components fa advanced technology Aromat Plastic fiber type MP-F Photoelectric Sensors Coaxial fiber type Glass fiber type Metal tube type MP-F25 MP-F5 MP-FD1 MP-FH5-02 MP-FHD1-02 MP-FX1 MP-FSD1-7 Thru-beam (Thru-beam (Diffuse

F25 transistor

Abstract: 2N6449 2N6450 equivalent 2N6450 IFN6449 IFN6450
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-24 F-24 01/99 NJ42 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ High Breakdown Voltage S Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts

2N2378

Abstract: F25 transistor
Contextual Info: M1'L-S-19500/289 EL AMENDMENT-3 18 APRIL 1966 SUPERSEDING AMENDMENT-2 11 September 1964 MILITARY SPECIFICATION TRANSISTOR, PNP, SILICON TYPE 2N2378 This Amendment forme a part of Military Specification MIL-S-19500/289(EL). 24 April 1964. Page 2 . paragraph 3.5:

alu 74181

Abstract: 25B22 f422 S2 f19
Contextual Info: CFT1812A CFT1812A CFT1812A 32-bit ALU 74181-type DESCRIPTION: CFT1812A is a 32-bit ALU which is extended from the CFT1810A with the same functions. LOGIC SYMBOL : INPUTS (LOADING IN TRANSISTOR PAIRS ) : S3(4), S2(4), SI(4), SO(4 ), A31(2.5), A30(2.5),A29{2.5),

Contextual Info: VC O -110 Voltage Controlled Oscillator 1000-2000M Hz DESCRIPTION The VCO-110 Voltage Controlled Oscillator* combines film circuit technology with a custom, stable high-Q varactor design. A unique, low-noise bipolar transistor and a proprietary output coupling

n20 ic protector

Abstract: ICP-F10 ACCI ICP-N38 ICP-S2.3 ICP-N50 icp-s1.8 ICP-N25 ICPF25 ICP-F50
Contextual Info: Transistors 1C protector Circuit protection elements •C irc u it protection elements ROHM circuit protectors protect semiconductors and their circuits by means of an excellent cutoff capability. Acci­ dents due to load shorts which destroy IC’s and valuable LSI’s are too numerous to count. Regardless of whether

F25 transistor

Contextual Info: SGS-THOMSON 2N5657 RJflD ^@HLiOT©li fl©i SILICON NPN TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedee SOT-32 plastic package. It is intended for use output amplifiers, low current,

B 511 transistor

Abstract: 06548 TDB2046DP
Contextual Info: TRANSISTOR ARRAYS The TDB2046 consists of 5 NPN general-purpose monolithic transistors. They are well suited to a wide range of applications and offer significant inherent integrated circuit advantages of excellent electrical characteristics matching and good thermal coupling thus minimizing temperature drifts.

2N6687

Abstract: 2N6686
Contextual Info: HARRI S SEIUCOND SECTOR 5bE P • 4305271 G0M0b2b 7 T2 H H A S File Number 1171.1 2N6686,2N6687,2N6688 TERMINAL DESIGNATIONS FU&QE 25-A SwitchMax Power Transistore N -P -N Types for Power Supplies and O ther High Voltage Switching Applications JEDEC T0-204AA

Contextual Info: D 1 O 2 O A - O 2 O 2 a / < 9 — !> ' Outline Draw ings POWER TRANSISTOR MODULE : F e a tu re s • High Current • High DC Current Gain • Non Insulated Typ e : A p p lic a tio n s f High Power Switching • ftE ffW R S IK Uninterruptible Power Supply

schematic diagram inverter 12v to 24v 30a

Abstract: inverter 5kva circuit diagram LB1542 2kva inverter circuit diagram dc to ac inverter schematic diagram inverter 5kva digitrip 310 time curve sim 900A ac Inverter schematics 10 kw Allen-Bradley 1336
Contextual Info: Allen-Bradley Parallel DC Bus Supply Configurations Using Bulletin 2364E NRUs and Bulletin 2364F RGUs Bulletin 2364P User Manual Important User Information Solid-State equipment has operational characteristics differing from those of electromechanical equipment. “Safety Guidelines for the

T29521B

Abstract: 2S521 FCT29
Contextual Info: FCT Interface Logic Jfj H A R R IS S E M I C O N D U C T O R RCA HARRIS GE INTERSIL CD54/74FC T29520A , CD54/74FC T29520B T CD54/74FC T29521A , C D 54/74FCT29521BT July 1990 Multilevel Pipeline Registers Positive-Edge-T riggered Type Features: The CD54/74FCT29520A, 29520BT, 29521A and 29521 BT

74fct574

Abstract: fct 574
Contextual Info: FCT Interface Logic 3 HARRIS U U S E M IC O N D U C T O R HARRIS RCA BE INTERSIL CD54/74FCT564, CD54/74FCT564AT CD54/74FCT574, CD54/74FCT574AT July 1990 574 564 - DO-D1 -D2-D3-D4-D5-D 6-D 7-O E - 1 C P - 1

Contextual Info: PRELIMINARY DATA SHEET 3V, 2400 MHz MEDIUM POWER SI MMIC AMPLIFIER UPC2771T TEST CIRCUIT FEATURES • HIGH GAIN: 20 dB at 900 to 1500 MHz Typical • HIGH OUTPUT POW ER: PidB = +12 dBm at 900 MHz +11 dBm at 1500 MHz • LOW BIAS VOLTAGE: 3.0 V Typical, 2.7 V Minimum

2N5885

Abstract: 2N 5883 2n 5886
Contextual Info: TYPES 2N5885, 2N5886 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S D ESIG NED FOR C O M P L E M E N T A R Y USE W ITH 2N 5883, 2N 5884 • 200 Watts at 25°C Case Temperature • 25-A Rated Continuous Collector Current

Catalog Sensors for Process Applications

Abstract: NCB1.5-8GM25-N0 5M
Contextual Info: FACTORY AUTOMATION CATALOG SENSORS FOR PROCESS APPLICATIONS 1FQQFSM 'VDIT
°
6OCFBUBCMF
GPS
RVBMJUZ
BOE
DIPJDF 8F
BSF
B
MFBEJOH
NBOVGBDUVSFS
PG
JOEVTUSJBM
TFOTPST
BOE
TFOTPS
TZTUFNT


230v dc to 440v ac inverter

Abstract: FRN001E1S-4U FRn001 FRN003E1S-4U FRNF50E1S-7U FRN010E1S-4U FRN002E1S-4U 2u 62 diode WESTINGHOUSE dc motor FRN002E1S-7U
Contextual Info: FRENIC-Multi series inverters, developed by Fuji Electric FA Components & Systems, are loaded with advanced technologies. The Multi series features class-highest control performance, abundant model variation, limited use of hazardous substances, reduced noise effect on peripheral equipment, and optimal

P2N50

Abstract: tp2n50 TP2N45 MTP2N50 mtp2n45 Motorola 2N50 mtp2n50 transistor 2N50 2n50 ES ST 2N50
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TM 2N50 M T P 2N 45 M T P 2N 50 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TM O S POWER FETs 2 AMPERES These TM O S P ow er FETs are designed fo r h ig h vo ltag e , high

1ld2

Abstract: e527 IL0251
Contextual Info: SIEMENS CriPNTSi OPTO SIEM EN S 44E D m 023b35b 000501=1 7 Q S I E X IL250/251/252 ILD250/251/252 SINGLE CHANNEL DUAL CHANNEL BIDIRECTIONAL INPUT OPTOCOUPLERS FEATURES • A C o r Po la rity In s e n sitiv e In p u ts • S e le c te d C u rren t T r a n s fe r R a tio s

C1684 r .85 transistor

Abstract: transistor c1684
Contextual Info: mm QUALITY PHOTOTRANSISTOR OPTOCOUPLER • [ te c h n o lo g ie s MCT275 DESCRIPTION The M CT275 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with a high voltage NPN silicon phototransistor.

PJ 969 diode

Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
Contextual Info: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode

Contextual Info: HARRI S SEHICOND SECTOR ill H A R R IS \M J s e m i c o n d u c t o r bôE D • M3D2S71 HAS 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Features Package • 20 Amp, 400 and 500 Volt JEDEC TO-218 AC TOP VIEW • Vce on 2.5V Max.

M54973

Abstract: M54973P
Contextual Info: M I T S U B I S H I B IP O L AR OSGiTAL ICs MS4973P B I-C M O S 8 -B IT P A R A L L E L -IN P U T , LATC H ED D R IVER DESCRIPTION The M54973P is a semiconductor integrated circuit consist­ ing of eight CMOS latches and bipolar output drivers pro­ duct by a Bi-CMOS process.

1DI200M-120

Contextual Info: 1 D I 2 M 2 0 2o o a - 1 POW ER TRAN SISTO R MODULE Features • High Arm Short Circuit Capability • h F E A ''S i' High DC Current Gain • 7 >J—sh'f V ' s W ' l KrtiR Including Free Wheeling Diode • t&t&M Insulated Type : Applications • iHffl'f >*< —9 General Purpose Inverter