transistor 10mhz 60w
Abstract: UGF21060 UGF21060F UGF21060P mosfet class ab rf
Contextual Info: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class
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UGF21060
17GHz,
MRF21060/MRF21060S.
700mA
30kHz
2140MHz
84MHz
10MHz
UGF21060
transistor 10mhz 60w
UGF21060F
UGF21060P
mosfet class ab rf
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UGF21030F
Abstract: UGF21030 UGF21030P 300GP
Contextual Info: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class
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UGF21030
2135MHz,
2145MHz
f1-10MHz
10MHz)
28VSpace
28VDC
350mA
2140Mhz
84MHz
UGF21030F
UGF21030
UGF21030P
300GP
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Contextual Info: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB
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UGF19125
1955MHz,
1965MHz
f1-10MHz
10MHz)
-43dBc
1300mA
UGF19125
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PN channel MOSFET 10A
Abstract: Cree Microwave UGF21125
Contextual Info: UGF21125 125W, 2.17GHz, 28V, Broadband RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for W-CDMA, TDMA, CDMA, GSM single and Multi-Carrier power amplifiers in
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UGF21125
17GHz,
2135MHz,
2145MHz
f1-10MHz
10MHz)
UGF21125
PN channel MOSFET 10A
Cree Microwave
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Cree Microwave
Abstract: UGF21060 UGF21060F UGF21060P
Contextual Info: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class
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UGF21060
17GHz,
MRF21060/MRF21060S.
UGF21060
Cree Microwave
UGF21060F
UGF21060P
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UGF21090
Abstract: UGF21090F UGF21090P 50 watts amplifier 10mhz
Contextual Info: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers
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UGF21090
17GHz,
2135MHz,
2145MHz
f1-10MHz
10MHz)
100ain
28VDC,
2140MHz
84MHz
UGF21090
UGF21090F
UGF21090P
50 watts amplifier 10mhz
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UGF19125
Abstract: UGF19125F UGF19125P
Contextual Info: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB
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Original
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UGF19125
1955MHz,
1965MHz
f1-10MHz
10MHz)
-43dBc
1300mA
28VDC,
1960MHz
UGF19125
UGF19125F
UGF19125P
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Cree Microwave
Abstract: UGF21090 UGF21090F UGF21090P
Contextual Info: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers
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UGF21090
17GHz,
2135MHz,
2145MHz
f1-10MHz
10MHz)
100uthorized
UGF21090
Cree Microwave
UGF21090F
UGF21090P
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60W POWER AMPLIFIER
Abstract: UGF16060F UGF16060P UPF16060 transistor 10mhz 60w
Contextual Info: UPF16060 60W, 1.66 GHz, 26V Broadband RF Field Effect Transistor Power N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband Commercial and Industrial applications in the frequency band 1626 to 1660 MHz. Rated with a minimum output power of 60W, it is ideal for 16QAM, CDMA, TDMA,
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UPF16060
16QAM,
400kHz)
600kHz)
540mA
1660MHz
UPF16060
60W POWER AMPLIFIER
UGF16060F
UGF16060P
transistor 10mhz 60w
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UGF21030F
Abstract: UGF21030 Cree Microwave MRF21030 UGF21030P 21701
Contextual Info: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class
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UGF21030
2135MHz,
2145MHz
f1-10MHz
10MHz)
UGF21030
UGF21030F
Cree Microwave
MRF21030
UGF21030P
21701
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50 watts amplifier 10mhz
Abstract: 10mhz mosfet Cree Microwave UGF19125 UGF19125F UGF19125P
Contextual Info: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB
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UGF19125
MRF19125/MRF19125S.
UGF19125
50 watts amplifier 10mhz
10mhz mosfet
Cree Microwave
UGF19125F
UGF19125P
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UGF21045F
Contextual Info: UGF21045 45W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. It’s ideally suitable for CDMA, W-CDMA, GSM,TDMA and Multi-Carrier power amplifiers in
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UGF21045
MRF21045/MRF21045S.
UGF21045
UGF21045F
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