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    F1303B Search Results

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    F1303B Price and Stock

    Glenair Inc 440GJ058NF1303-BT1

    Circular MIL Spec Backshells ACCESSORIES - BANDING/CRIMP ADAPTER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 440GJ058NF1303-BT1
    • 1 $1051.97
    • 10 $614.1
    • 100 $614.1
    • 1000 $614.1
    • 10000 $614.1
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    Newark 440GJ058NF1303-BT1 Bulk 1 1
    • 1 $1064.98
    • 10 $621.69
    • 100 $270.3
    • 1000 $270.3
    • 10000 $270.3
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    Powell Electronics 440GJ058NF1303-BT1 1 1
    • 1 $1577.74
    • 10 $1577.74
    • 100 $1577.74
    • 1000 $1577.74
    • 10000 $1577.74
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    Royal Electronic Factory (Thailand) Co Ltd MF0W8FF1303B00

    Metal Film Resistors - Through Hole 125 mW (1/8 W) 1% 130K
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MF0W8FF1303B00
    • 1 -
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    • 100 -
    • 1000 $0.011
    • 10000 $0.008
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    Royal Electronic Factory (Thailand) Co Ltd MF0W4FF1303B00

    Metal Film Resistors - Through Hole 250 mW (1/4 W) 1% 130K
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MF0W4FF1303B00
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.018
    • 10000 $0.012
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    Royal Electronic Factory (Thailand) Co Ltd MF0W2FF1303B00

    Metal Film Resistors - Through Hole 500 mW (1/2 W) 1% 130K
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MF0W2FF1303B00
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.023
    • 10000 $0.016
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    Vishay Intertechnologies UMA02040F1303BA100

    MELF Resistors
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics UMA02040F1303BA100
    • 1 -
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    • 100 -
    • 1000 $0.971
    • 10000 $0.941
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    F1303B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Q631

    Abstract: NOV-97 682 FET
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> F1303B LOW NOISE GaAs F E T DESCRIPTION OUTLINE DRAWING The M G F1303B low-noise GaAs FET with an N-channel 4 M IN . Schottky gate is designed fo r use in S to Ku band ampli­ fiers. The hermetically sealed metal-ceramic


    OCR Scan     		MGF1303B MGF1303B Q631 NOV-97 682 FET PDF

    251C

    Abstract: MGF1303B
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> F1303B LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F1303B low-noise GaAs FET with an N-channel 4 M IN . 1.85 + 0.2 4 M IN . 0 .1 5 7 M IN . (0.0 7 3'± 0 .0 0 8) (0 .1 5 7 M IN .) Schottky gate is designed for use in S to Ku band ampli­


    OCR Scan     		MGF1303B MGF1303B 12GHz 251C PDF

    M5M27C102

    Abstract: M5M27C102P MGF1303B
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1303B LOW NOISE GaAs F E T DESCRIPTION O U TLIN E DRAWING The F1303B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to Ku band ampli­ fiers. The hermetically sealed metal-ceramic package


    OCR Scan     		MGF1303B MGF1303B M5M27C102P RV-15 1048576-BIT 65536-W0RD 16-BIT) T-46-13-25 M5M27C102 PDF

    F-1303

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> i M G F1303Bj I f LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 3 0 3 B low-noise GaAs FET with an N-channel Schottky gate is designed fo r use in S to Ku band am pli­ fiers. The herm etically sealed metal-ceramic


    OCR Scan     		F1303Bj F-1303 PDF

    MGF1303B

    Abstract: ku Band Power GaAs FET
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M F1303B LOW NO ISE GaAs F E T DESCRIPTION OUTLINE DRAWING The M G F1303B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to Ku band ampli­ fiers. The hermetically sealed metal-ceramic 4M IN .


    OCR Scan     		MGF1303B MGF1303B 157MIN. 157ONDUCTOR 12GHz ku Band Power GaAs FET PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1903B TARE CARRIER LOW NOISE GaAs FET D E S C R IP T IO N The MGF1 9 0 3 B is a low noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to Ku band amplifiers. The hermetically sealed metal-ceramic package


    OCR Scan     		MGF1903B MGF1903B F1303B. PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1903B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F 1 9 0 3 B is a lo w noise G aAs FET w ith an N -c h a n n e l S c h o ttky gate, w hich is designed fo r use in S to Ku band Unit: millimeters inches


    OCR Scan     		F1903B F1303B 12GHz PDF

    MGF1903

    Abstract: F-1303 mgf1903b
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1903B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F 1 9 0 3 B is a lo w n o is e G a A s F E T w ith a n N -c h a n n e t S c h o ttk y gate, w h ic h is designed fo r use in S to K u band 4.0 ± 0.2


    OCR Scan     		MGF1903B F1303B 12GHz MGF1903 F-1303 mgf1903b PDF

    MGF1903B

    Abstract: MGF1303B 903b mgf1903
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1903B TAPE CA RR IER LOW NOISE GaAs FET DESCRIPTION The M G F1903B is a low noise GaAs FET w ith an N-channel Schottky gate, which is designed fo r use in S to Ku band amplifiers. The hermetically sealed metal-ceramic package


    OCR Scan     		MGF1903B MGF1303B. MGF1903B 12GHz MGF1303B 903b mgf1903 PDF