F100480 Search Results

F100480

Abstract: Random Access Memory RAM
Contextual Info: F100480 16,384 x 1-Bit Static Random Access Memory FAIRCHILD A S ch lu m b e rge r C o m p a n y M em ory and H igh Speed L o g ic D escription T he F100480 is a 16,384-bit read/w rite Random Access M em ory R AM , organized 16,384 words by one b it per

Contextual Info: F100480 16,384 x 1-Bit Static Random Access Memory FAIRCHILD A S chlum berger Com pany Memory and High Speed Logic Description The F100480 is a 16,384-bit read/write Random Access Memory RAM , organized 16,384 words by one bit per word and designed for high-speed scratchpad, control

HN462532G

Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Contextual Info: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .

MBM100480

Abstract: 100K series ECL MBM100480-25
Contextual Info: FUJITSU M ICROELECTRONICS. INC. ^ , G^g 0 MBM100480-25 ECL 16,384-BIT BIPOLAR RANDOM ACCESS MEMORY PRELIMINARY DESCRIPTION The Fujitsu MBM100480-25 is a fu lly d e c o d e d 16384-bit ECL read/w rite random access m em ­ ory designed for m ain, control and buffer storage applications.

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

100480

Contextual Info: FU JITSU ECL 16384-BIT BIPOLAR RANDOM A CC ESS MEMORY M BM 100480-15 MBM 100480-25 S u p ie m b e r 1 9 8 4 E d i t i o n 3 .0 16384-BIT BIPO LA R ECL R A N D O M A C C ESS M E M O R Y The Fujitsu MBM 100480 is fully decoded 16384-bit ECL read/write random