F1 TRANSISTOR MARK Search Results

eiaj-rrm 12 d

Abstract: eiaj-rrm 12 b eiaj-rrm eiaj-rrm 08 b iec 60286 14008 2.45c ABEL transistor marked yb JAPAN transistor
Contextual Info: Sheet No. 1 / 7 ⵾ຠⷙᩰ / Product Specification 䊁䊷䊏䊮䉫઀᭽ᦠ / Taping Specification ຠ⒳ฬ / Type Number : SSMini3-F1 䍢䍵䍻䍚䍼䍛䍞 TX /L Prepared Checked Applied Established by by by by N.Kasuya T.Kubo H.Shidooka SSMini3-F1 Transistor (TX)/L

mark v02

Abstract: FOD250L Analog devices marking Information PACKAGE SOIC FOD050L FOD050LR1 FOD050LR2 FOD053L FOD250LS FOD250LSD FOD250LT
Contextual Info: LVTTL/LVCMOS 3.3V HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL: FOD050L DUAL-CHANNEL: FOD053L FOD250L PACKAGE SCHEMATIC 8 VCC N/C 1 8 V 1 7 VB + 2 8 VCC + 1 F1 _ 2 7 V01 3 6 V02 VF _ 6 VO 3 _ V 8 N/C 4 8 1 5 GND F2 5 GND + 4 1 FOD050L, FOD250L FOD053L

FOD250L

Abstract: FOD050L FOD050LR1 FOD050LR2 FOD053L FOD250LS FOD250LSD FOD250LT VDE0884
Contextual Info: LVTTL/LVCMOS 3.3V HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL: FOD050L DUAL-CHANNEL: FOD053L FOD250L PACKAGE SCHEMATIC 8 VCC N/C 1 8 V 1 7 VB + 2 8 VCC + 1 F1 _ 2 7 V01 3 6 V02 VF _ 6 VO 3 _ V 8 N/C 4 8 1 5 GND F2 5 GND + 4 1 FOD050L, FOD250L FOD053L

Contextual Info: LVTTL/LVCMOS 3.3V HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL: FOD050L DUAL-CHANNEL: FOD053L FOD250L PACKAGE SCHEMATIC 8 VCC N/C 1 8 V 1 7 VB + 2 8 VCC + 1 F1 _ 2 7 V01 3 6 V02 VF _ 6 VO 3 _ V 8 N/C 4 8 1 5 GND F2 5 GND + 4 1 FOD050L, FOD250L FOD053L

FOD250L

Contextual Info: LVTTL/LVCMOS 3.3V HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL: FOD050L DUAL-CHANNEL: FOD053L FOD250L PACKAGE SCHEMATIC 8 VCC N/C 1 8 V 1 7 VB + 2 8 VCC + 1 F1 _ 2 7 V01 3 6 V02 VF _ 6 VO 3 _ V 8 N/C 4 8 1 5 GND F2 5 GND + 4 1 FOD050L, FOD250L FOD053L

6N136

Abstract: a 2530 6N135 HCPL-2530 HCPL-2503 HCPL-2531 HCPL-4502 hcpl 2531 HCPL4502 HCPL2531
Contextual Info: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL: 6N135 DUAL-CHANNEL: HCPL-2530 6N136 HCPL-2531 PACKAGE HCPL-2503 HCPL-4502 SCHEMATIC N/C 1 8 VCC + 1 V 8 + 2 1 7 VB 8 VCC F1 _ 2 7 V01 3 6 V02 VF _ 3 6 VO _ VF2 N/C 4 8 5 GND + 4 5 GND 8 1 1 6N135, 6N136, HCPL-2503, HCPL-4502

pulse transformer 4502

Abstract: 2531 HCPL-2530 hcpl2530 TA 2503 HCPL4502 HCPL2531
Contextual Info: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL: 6N135 DUAL-CHANNEL: HCPL-2530 6N136 HCPL-2531 PACKAGE HCPL-2503 SCHEMATIC N/C 1 8 VCC + 1 V 8 + 2 1 7 VB 8 VCC F1 _ 2 7 V01 3 6 V02 VF _ 3 6 VO _ V N/C 4 8 HCPL-4502 5 GND F2 + 4 5 GND 8 1 1 6N135, 6N136, HCPL-2503, HCPL-4502

pulse transformer 4502

Abstract: A 2530 2531 CI D 2530 4502 C CM 2530 A 2531 Optocouplers 4502 HCPL2531 6N135
Contextual Info: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL: 6N135 DUAL-CHANNEL: HCPL-2530 6N136 HCPL-2531 PACKAGE HCPL-2503 SCHEMATIC N/C 1 8 VCC + 1 V 8 + 2 1 7 VB 8 VCC F1 _ 2 7 V01 3 6 V02 VF _ 3 6 VO _ V N/C 4 8 HCPL-4502 5 GND F2 + 4 5 GND 8 1 1 6N135, 6N136, HCPL-2503, HCPL-4502

pulse transformer 4502

Abstract: hcpl2531 HCPL-2531 Optocouplers 4502 HCPL 480 4502 HCPL-2530 M 2530 TA 2503 6N135
Contextual Info: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL: 6N135 DUAL-CHANNEL: HCPL-2530 6N136 HCPL-2531 PACKAGE HCPL-2503 SCHEMATIC N/C 1 8 VCC + 1 V 8 + 2 1 7 VB 8 VCC F1 _ 2 7 V01 3 6 V02 VF _ 3 6 VO _ V N/C 4 8 HCPL-4502 5 GND F2 + 4 5 GND 8 1 1 6N135, 6N136, HCPL-2503, HCPL-4502

MT6320

Contextual Info: PHOTO TRANSISTOR COUPLER MARKTECH INTERNATIONAL 1ÖE D • ST'l'ibSS G Q G Q M ? 6! 2 MT6350, MT6360 APPLICATIONS • OFFICE MACHINERY • COPIERS • SOLID STATE RELAY • SWITCHING POWER SUPPLY • PROGRAMABLE CONTROLLERS The MARKTECH MT6350 and MT6360 consist

PN5179

Abstract: CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2
Contextual Info: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency

MMBT2484

Abstract: PN2484 2N5088 CBVK741B019 F63TNR PN2222N
Contextual Info: PN2484 / MMBT2484 PN2484 MMBT2484 C E C B TO-92 SOT-23 E B Mark: 1U NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

MT3S113TU

Contextual Info: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 3 1.1. 2.2. 3.3. R7 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:|S21e|2=12.5dB Typ. (@ f=1GHz)

Contextual Info: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking

Contextual Info: MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 2 3 1.1. 2.2. 3.3. R7 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain:|S21e| = 12.5dB typ. (@ f=1GHz)

MT3S113

Abstract: transistor 2F to-236 4360A
Contextual Info: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking

Contextual Info: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking

mt3s113p

Contextual Info: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking

IMX6

Abstract: MARKING Pa 6pin TRANSISTOR 6pin ic marking code P2 2SC2413K T108 A10Z
Contextual Info: IMX6 Transistor, dual, NPN Features Dimensions Units : mm • available in SMT6 (IMD, SC-74) package • package marking: X6 • package contains two independent NPN transistors (2SC2413K) • same size as UMT3 (UMT, SC-70) so same placement machine can be

2SC2059K

Abstract: 2SC4099 2SC4649
Contextual Info: 2SC2059K 2SC4099 2SC4649 Transistor, NPN Features • available in SMT3 SMT, SC-59 , UMT3 (UMT, SC-70), and EMT3 (EMT, SC-75) packages • package marking: 2SC2059K, 2SC4099, 2SC4649; J-*, where ★ is hFE code • high transition frequency, typically fT = 500 MHz at 1 mA

CBVK741B019

Abstract: F63TNR MMBTA43 MPSA42 MPSA43 PN2222N DATE CODE FAIRCHILD
Contextual Info: MPSA43 MMBTA43 C E C B TO-92 B SOT-23 E Mark: 1E NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. See MPSA42 for characteristics. Absolute Maximum Ratings*

pn2222n

Abstract: CBVK741B019 F63TNR MMBT3702 MPS3702 PN2907A transistor mark code t1 Fairchild taping TO-92
Contextual Info: MPS3702 MMBT3702 C E C TO-92 BE B SOT-23 Mark: 137 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*

2N5088

Abstract: CBVK741B019 F63TNR MMBT2484 PN2222N PN2484
Contextual Info: PN2484 / MMBT2484 PN2484 MMBT2484 C E C B TO-92 SOT-23 E B Mark: 1U NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

transistor marking MCs

Abstract: SOT 23 CODE MCS NPN marking MCs marking MCs sot-323 Q62702-F1645 bfs 11
Contextual Info: BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Type Marking Ordering Code Pin Configuration BFS 17W MCs 1=B Q62702-F1645 2=E Package 3=C SOT-323 Maximum Ratings of any single Transistor Parameter