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    F011 TRANSISTOR Search Results

    F011 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    F011 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    F852 transistor

    Abstract: NDS9925A F011 F63TNR F852 L86Z SOIC-16 S237
    Text: May 1998 NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


    Original     		PDF NDS9925A OT-23 F852 transistor NDS9925A F011 F63TNR F852 L86Z SOIC-16 S237

    SI4532DY

    Abstract: F852 transistor CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
    Text: Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF Si4532DY -30Voduct F852 transistor CBVK741B019 F011 F63TNR F852 FDS9953A L86Z

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9412 FDS9953A L86Z
    Text: FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF FDS9412 CBVK741B019 F011 F63TNR F852 FDS9412 FDS9953A L86Z

    8 pin ic 9435A

    Abstract: 9435a FDS9435A data F63TNR F852 FDS9435A L86Z SOIC-16
    Text: May 1999 FDS9435A Single P-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF FDS9435A OT-23 OT-223 SOIC-16 8 pin ic 9435A 9435a FDS9435A data F63TNR F852 FDS9435A L86Z SOIC-16

    F011

    Abstract: F63TNR F852 FDS8926A L86Z SOIC-16
    Text: February 1998 FDS8926A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF FDS8926A F011 F63TNR F852 FDS8926A L86Z SOIC-16

    gs 9412

    Abstract: F011 F63TNR F852 FDS9412 L86Z SOIC-16 D1294
    Text: November 1997 FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF FDS9412 gs 9412 F011 F63TNR F852 FDS9412 L86Z SOIC-16 D1294

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9953A L86Z NDS9933A 28A-600 F011 transistor
    Text: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior


    Original     		PDF NDS9933A CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS9933A 28A-600 F011 transistor

    1182

    Abstract: F011 F63TNR F852 L86Z NDS9955 SOIC-16 NDS9955 SO-8
    Text: May 1998 NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDS9955 OT-23 1182 F011 F63TNR F852 L86Z NDS9955 SOIC-16 NDS9955 SO-8

    NDS9945

    Abstract: 9945 motor 9945 So-8 ic 9945 a 8 pin F011 F63TNR F852 L86Z SOIC-16
    Text: May 1998 NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDS9945 OT-23 NDS9945 9945 motor 9945 So-8 ic 9945 a 8 pin F011 F63TNR F852 L86Z SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very


    Original     		PDF Si4532DY

    MOSFET 830 63 ng

    Abstract: nds9410a diode marking code RJ
    Text: NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF NDS9410A MOSFET 830 63 ng nds9410a diode marking code RJ

    Untitled

    Abstract: No abstract text available
    Text: Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very


    Original     		PDF Si4532DY

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS8433A FDS9953A L86Z
    Text: FDS8433A Single P-Channel 2.5V Specified MOSFET General Description Features This P-Channel enhancement mode power field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize


    Original     		PDF FDS8433A CBVK741B019 F011 F63TNR F852 FDS8433A FDS9953A L86Z

    FDS8433A

    Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
    Text: FDS8433A Single P-Channel 2.5V Specified MOSFET General Description Features This P-Channel enhancement mode power field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize


    Original     		PDF FDS8433A FDS8433A CBVK741B019 F011 F63TNR F852 FDS9953A L86Z

    F011

    Abstract: F63TNR F852 FDS8936S L86Z SOIC-16
    Text: August 1997 FDS8936S Dual N-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF FDS8936S OT-23 F011 F63TNR F852 FDS8936S L86Z SOIC-16

    9936A

    Abstract: F852 FDS9936A L86Z SOIC-16 F011 F63TNR
    Text: May 1998 FDS9936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF FDS9936A OT-23 9936A F852 FDS9936A L86Z SOIC-16 F011 F63TNR

    Untitled

    Abstract: No abstract text available
    Text: FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF FDS9412

    DSA0030261

    Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS9410A MOSFET 830 63 ng
    Text: NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF NDS9410A DSA0030261 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS9410A MOSFET 830 63 ng

    Untitled

    Abstract: No abstract text available
    Text: May 1998 FDS8936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF FDS8936A

    bcy59 equivalent

    Abstract: BU108 BUY69 BC326 F011 transistor BSCECC F011 bcy78 equivalent bcy79 equivalent ica 350
    Text: BS9000 NPN Power Transistors TO-3 Package B S Type Num ber VCBO Com m ercial Equivalent Case Outlines A bsolu te M axim um Ratings IC A VEBO PTOT 8 50 5 5 10 6 7 50 70 B S 93 63 B S 93 65 B S 93 63 F014 F191 F016 B D 2 53 , A, B C BU105 BU108 3 5 0 to 900


    OCR Scan     		PDF BS9000 BS9363 BS9365 BD253 BU105 BU108 BS936S bcy59 equivalent BUY69 BC326 F011 transistor BSCECC F011 bcy78 equivalent bcy79 equivalent ica 350

    2N3053 equivalent

    Abstract: f012 transistor t05 BC107 pnp equivalent 2n4036 equivalent BS9365 F112 BS9365F112 BC177 equivalent bc108 equivalent BS93G5
    Text: BS9000 Small Signal Transistors Absolute Maximum Rating 8 S Type Number 6 S 9360 F001 BS9360 F001 BS9360 F001 BS9360 F002 BS9360 F002 BS9360 F002 B S9360 F003 B S9360 F003 B S9360 F003 BS9360 F004 BS9360 F004 BS9360 F004 BS9360 F005 BS9360 F005 BS9360 F005


    OCR Scan     		PDF BS9000 BS9360 BFT32 BFT33 BFT34 B59360 2N3053 equivalent f012 transistor t05 BC107 pnp equivalent 2n4036 equivalent BS9365 F112 BS9365F112 BC177 equivalent bc108 equivalent BS93G5

    BU105

    Abstract: BUY69 BU108 BU137 F014 transistor 5010 S010 BS-9000 BU137A
    Text: Discrete Semiconductors T e x a s In s t r u m e n t s BS9000 High Speed Rectifiers D C Tw no Number BS9331 BS9331 BS9331 BS9331 BS9331 F027 F027 F027 F027 F027 Commercia! Equivalent Case 1N3879/R 1N3880/R 1N3881/R 1 N3882/R 1N3883/R S010 S010 S010 S010 S010


    OCR Scan     		PDF BS9000 BS9331 1N3879/R 1N3880/R 1N3881/R 1N3882/R BU105 BUY69 BU108 BU137 F014 transistor 5010 S010 BS-9000 BU137A

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R tm NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description This P-Channel enhancement mode power field ef­ • -2.8 A, -20 V. RDS on = 0.14 « @ VQS = -4.5 V fect transistor is produced using Fairchild’s propri­


    OCR Scan     		PDF NDS9933A DC/95

    Untitled

    Abstract: No abstract text available
    Text: F A I R C H June 1998 I L D SEM IC ONDUCTO R tm FDS8958A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    OCR Scan     		PDF FDS8958A