F011 TRANSISTOR Search Results

bcy59 equivalent

Abstract: BU108 BUY69 BC326 F011 transistor BSCECC F011 bcy78 equivalent bcy79 equivalent ica 350
Contextual Info: BS9000 NPN Power Transistors TO-3 Package B S Type Num ber VCBO Com m ercial Equivalent Case Outlines A bsolu te M axim um Ratings IC A VEBO PTOT 8 50 5 5 10 6 7 50 70 B S 93 63 B S 93 65 B S 93 63 F014 F191 F016 B D 2 53 , A, B C BU105 BU108 3 5 0 to 900

2N3053 equivalent

Abstract: f012 transistor t05 BC107 pnp equivalent 2n4036 equivalent BS9365 F112 BS9365F112 BC177 equivalent bc108 equivalent BS93G5
Contextual Info: BS9000 Small Signal Transistors Absolute Maximum Rating 8 S Type Number 6 S 9360 F001 BS9360 F001 BS9360 F001 BS9360 F002 BS9360 F002 BS9360 F002 B S9360 F003 B S9360 F003 B S9360 F003 BS9360 F004 BS9360 F004 BS9360 F004 BS9360 F005 BS9360 F005 BS9360 F005

BU105

Abstract: BUY69 BU108 BU137 F014 transistor 5010 S010 BS-9000 BU137A
Contextual Info: Discrete Semiconductors T e x a s In s t r u m e n t s BS9000 High Speed Rectifiers D C Tw no Number BS9331 BS9331 BS9331 BS9331 BS9331 F027 F027 F027 F027 F027 Commercia! Equivalent Case 1N3879/R 1N3880/R 1N3881/R 1 N3882/R 1N3883/R S010 S010 S010 S010 S010

Contextual Info: S E M IC O N D U C T O R tm NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description This P-Channel enhancement mode power field ef­ • -2.8 A, -20 V. RDS on = 0.14 « @ VQS = -4.5 V fect transistor is produced using Fairchild’s propri­

F852 transistor

Abstract: NDS9925A F011 F63TNR F852 L86Z SOIC-16 S237
Contextual Info: May 1998 NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high

SI4532DY

Abstract: F852 transistor CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Contextual Info: Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

Contextual Info: F A I R C H June 1998 I L D SEM IC ONDUCTO R tm FDS8958A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

CBVK741B019

Abstract: F011 F63TNR F852 FDS9412 FDS9953A L86Z
Contextual Info: FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

8 pin ic 9435A

Abstract: 9435a FDS9435A data F63TNR F852 FDS9435A L86Z SOIC-16
Contextual Info: May 1999 FDS9435A Single P-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

F011

Abstract: F63TNR F852 FDS8926A L86Z SOIC-16
Contextual Info: February 1998 FDS8926A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

gs 9412

Abstract: F011 F63TNR F852 FDS9412 L86Z SOIC-16 D1294
Contextual Info: November 1997 FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

CBVK741B019

Abstract: F011 F63TNR F852 FDS9953A L86Z NDS9933A 28A-600 F011 transistor
Contextual Info: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior

1182

Abstract: F011 F63TNR F852 L86Z NDS9955 SOIC-16 NDS9955 SO-8
Contextual Info: May 1998 NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

NDS9945

Abstract: 9945 motor 9945 So-8 ic 9945 a 8 pin F011 F63TNR F852 L86Z SOIC-16
Contextual Info: May 1998 NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

MOSFET 830 63 ng

Abstract: nds9410a diode marking code RJ
Contextual Info: NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

Contextual Info: Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very

CBVK741B019

Abstract: F011 F63TNR F852 FDS8433A FDS9953A L86Z
Contextual Info: FDS8433A Single P-Channel 2.5V Specified MOSFET General Description Features This P-Channel enhancement mode power field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize

FDS8433A

Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Contextual Info: FDS8433A Single P-Channel 2.5V Specified MOSFET General Description Features This P-Channel enhancement mode power field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize

Contextual Info: May 1998 FDS8936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

F011

Abstract: F63TNR F852 FDS8936S L86Z SOIC-16
Contextual Info: August 1997 FDS8936S Dual N-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

9936A

Abstract: F852 FDS9936A L86Z SOIC-16 F011 F63TNR
Contextual Info: May 1998 FDS9936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

DSA0030261

Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS9410A MOSFET 830 63 ng
Contextual Info: NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

Contextual Info: May 1998 FDS8936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density