F 959 TRANSISTOR Search Results

2SC959

Abstract: 2sc960 C959 2SA606 2SA607 transistor ft 960 2116 2SC999
Contextual Info: 2SA606, 607/2SC 959, 960 2SA606, 607/2SC959, 960 PNP/NPN x e 9 * > 7 y a v h 9 V '✓7.9 / P N P / N P N SILICON EP IT A X IA L TRANSISTOR f â H S iî l Î B f f l / A u d io Frequency Amplifier « « ./F E A T U R E S ♦ »»8 /PACKAGE DIMENSIONS lUmtmml

BF959

Abstract: f 959 transistor Q62702-F640
Contextual Info: NPN Silicon RF Transistor ● For SAW filter driver applications in TV tuners ● For linear broadband VHF amplifier stages ● For oscillator applications BF 959 Type Marking Ordering Code BF 959 – Q62702-F640 Pin Configuration 1 2 3 C E Package1 TO-92

Contextual Info: S IE M E N S NPN Silicon RF Transistor BF 959 • For SAW filter driver applications in TV tuners • For linear broadband VHF amplifier stages • For oscillator applications Type Marking Ordering Code BF 959 - Q62702-F640 Pin Co nfigural ion 1 2 3 C E Package1

SC1959

Abstract: 2SC1959
Contextual Info: TOSHIBA TRANSISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL 2 S C 1 959 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2 SC 1959) Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS . 5.1 MAX.

9426

Abstract: 9527 sumitomo epoxy 6300h
Contextual Info: 05/27/2004 RELIABILITY REPORT FOR DS2187, Rev C7 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : ken.wendel@dalsemi.com

12ds7

Abstract: 12ds7 tube Scans-0017276 general electric
Contextual Info: 12DS7 12DS7 ET-T1551 Page 1 DUPLEX-DIODE TETRODE TUBES 9-59 FOR DETECTOR AND AF DRIVER APPLICATIONS IN AUTOMOBILE RECEIVERS DESCRIPTION A N D RATINGS T h e 12DS7 is a m iniature duplex-diode, space-charge-grid tetrode intended for use as a com bined detector, A V C rectifier, an d transistor driver. T h e tube

NEC Ga FET marking L

Abstract: U/25/20/TN26/15/850/NE32984D
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm

9721

Abstract: ABLEBONd 84-1 JEDEC hast
Contextual Info: 03/24/2003 RELIABILITY REPORT FOR DS1005, Rev A2 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : ken.wendel@dalsemi.com

sot marking code ZS

Abstract: transistor bf 290
Contextual Info: SIEMENS BF 770A NPN S ilicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators it m 1= B h Q62702-F1124 O LSs CO BF 770A ro ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin C onfiguration

Transistor NEC K 3654

Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS

transistor marking p04

Abstract: P04 transistor transistor p04 MARKING CODE p04 LC marking code transistor
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistor PMBS3904 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V). 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector • General purpose switching and amplification, e.g.

mark a7 sot23

Abstract: J-STD-20A atec 6710S CDA194 mp8000
Contextual Info: 08/23/2004 RELIABILITY REPORT FOR DS1816, Rev A7 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : ken.wendel@dalsemi.com

CDA194

Abstract: mark a7 sot23
Contextual Info: 08/23/2004 RELIABILITY REPORT FOR DS1810, Rev A7 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : ken.wendel@dalsemi.com

LMISR4

Contextual Info: 08/23/2004 RELIABILITY REPORT FOR DS1811, Rev A7 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : ken.wendel@dalsemi.com

PTF080901A

Abstract: 080901E smd marking PTF ptf080901e resistor 1 ohms philips resistor LDMOS 90W
Contextual Info: Preliminary PTF 080901 LDMOS RF Power Field Effect Transistor 90 W, 860–960 MHz Description Key Features The PTF 080901 is a 90–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

CDA194

Abstract: mark a7 sot23 mold compound
Contextual Info: 08/23/2004 RELIABILITY REPORT FOR DS1817, Rev A7 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : ken.wendel@dalsemi.com

Contextual Info: 08/23/2004 RELIABILITY REPORT FOR DS1818, Rev A6 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : ken.wendel@dalsemi.com

Contextual Info: DTC363EK/DTC363ES/DTC363EF DTC363EL/DTC363EA/DTC363EV I ' 7 > y X $ /Transistors D TC 363EK /D TC 363ES/D TC 363EF D TC 363EL/D TC 363EA /D TC 363EV 5 l- T < > ? « T - > 'W h 7 > - /X J g j S r t a h 7 > -> ' X 2 ^-/Transistor Switch Digital Transistors (Includes Resistors)

DD 127 D TRANSISTOR

Abstract: A90W ptf080901e
Contextual Info: PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

LM7805 smd

Abstract: LM7805 smd 8 pin marking us capacitor pf l1 smd marking f2 TRANSISTOR circuit of lm7805 transistor smd marking ND BCP56 LM7805 PTF080451 PTF080451E
Contextual Info: PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description Features The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

mark a7 sot23

Contextual Info: 08/23/2004 RELIABILITY REPORT FOR DS1815, Rev A7 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : ken.wendel@dalsemi.com

Ablebond 84-1 LMISR4

Contextual Info: 08/23/2004 RELIABILITY REPORT FOR DS1812, Rev A7 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : ken.wendel@dalsemi.com

Contextual Info: 08/23/2004 RELIABILITY REPORT FOR DS1813, Rev A6 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : ken.wendel@dalsemi.com

3055 transistor

Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055
Contextual Info: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for