F 7734 Search Results

Contextual Info: V I— .100 [2.54] 6 REV B2 7457 JM 3 - 2 4 -0 6 B3 7557 TRM 9 -6 -06 B4 7734 TRM CN |J— .050 [1.27] (7) .050 [1.27]— DATE 2/2/06 ECN APP'D. BY O O - 4“ f - f 0.035 [0.89] ±.003 [0.08] (8) - f - f - -0-10006 [0.15JI PIN #1 126 [3.2S] .125 [3.18] W

F00041

Abstract: IRFM150 SFF150M SFF150Z
Contextual Info: C V nK fcll PRELIMINARY S F F 150M SFF150Z SOLID STATE DEVICES, INC CA 14849 Firestone Boulevard • La Mirada, 90638 Phone: (714 670-SSDI (7734) • Fax: (714) 522-7424 30 AMP 100 VOLTS _ 0.055 Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES:

R5F72A

Abstract: SH7254 SH7269 SH72A2 SH72A0 SH7734 SH7239 SH7237 sh7253 SH726B
Contextual Info: R5 F 72A0 6 K xxx FM Renesas MCU ROM Type F: Flash S:ROM less Package Function ROM Size, or Others SuperH Family Product Series/Group 708x SH7080 SH7083,SH7084,SH7085,SH7086 712x SH7125 SH7124, SH7125 713x SH7137 SH7131,SH7132,SH7136,SH7137 714x SH7146 SH7146, SH7149

Contextual Info: ~S1 2 i Am29C52A CMOS Eight-Bit Bidirectional I/O Port PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS Low Pow er - The C M OS Am 29C 52A is a plug-in replacem ent for th e Am 2952A. The Am 29C 52A dissipates less than 2 0 % o f the pow er o f its e quivalent bipolar part.

stk 412 -410

Abstract: stk 412 -420 StK 412 230 Am2942 TLC-292A stk 490 110 programmable pipeline microcode memory STK 412 microprogram stk 412 220
Contextual Info: ^ /V / Am29112 ' ? 5y n c /w rrw cTl^ -i A £^t i'V u i? _ i ^ ^•9 - f ' r-A" 4 s ^ x 4 ,-th ¿ " V ij i£ ^ 0 | 'n — <£f j u y . f tv A High-Performance 8-Bit Slice Microprogram Sequencer . ADVANCED INFORMATION ->2 fc^ p n o o /£ _

AM290L

Abstract: amd 2901 alu amd 2901 pinout diagram 29c101 amd am2 pinout l67s pinout AM2 AMD CGX068
Contextual Info: / .• 16-Bit C M O S Microprocessor Slice > 3 DISTINCTIVE CHARACTERISTICS IS> CO E xpandable C onnect any num ber o f A m 29C 101s to g e th e r fo r longer word lengths. L e ft/rig h t s hift in dependent o f ALU Add and sh ift o perations ta k e only one cycle.

CGX068

Abstract: amd 2901 am2901b Am29C101s am29c111
Contextual Info: / .• 16-Bit C M O S Microprocessor Slice > 3 DISTINCTIVE CHARACTERISTICS IS> CO E xpandable C onnect any num ber o f A m 29C 101s to g e th e r fo r longer word lengths. L e ft/rig h t s hift in dependent o f ALU Add and sh ift o perations ta k e only one cycle.

IRF250

Abstract: SFF250C
Contextual Info: mm PRELIMINARY SFF250C SOLID STATE DEVICES, INC TCf 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 ,f «I 30 AMP 200 VOLTS 0.085 Q N-CHANNEL POWER MOSFET Designer’s Datasheet FEATURES: Rugged construction with poly silicon gate

IRFM250

Abstract: SFF250M SFF250Z
Contextual Info: £s@l PRELIMINARY SFF250M SFF250Z SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 30 AMP 200 VOLTS 0.085 fí N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with poly silicon gate

TV THOMPSON 29 DF 170 G

Abstract: Novus 172 HM5241 hitachi tft
Contextual Info: 3 5- 7- 8; 1 4 :2 3 ; R BEStëfi « V f f l « V S H H H IJH A L / S P ; 0 4 2 3 - 2 7 - 8 62 ? HB526A25672EA Series 131,072-word x 72-bit x 2-bank Synchronous Dynamic RAM Module H ITA CH I ADE-203-614 (Z) Preliminary Rev. 0.0 Jul. 5. . 996 Description

29c101

Contextual Info: / 16-Bit CMOS Microprocessor Slice > 3 DISTINCTIVE CHARACTERISTICS ro CO E xpandable C onnect any num ber o f A m 29C 101s to g e th er fo r longer w ord lengths. L e ft/rig h t shift in dep e n d e n t o f ALU A dd and sh ift opera tio ns ta ke only one cycle.

D9000

Contextual Info: HITACHI SH775X SH-4 Series SuperH RISC Processor Semiconductor Description T he S H 7 7 5 x (S H -4 ) s e rie s is a h ig h - p e rfo rm a n c e , w e ll in te g ra te d , c o s t - e f f e c t iv e , 2 - is s u e s u p e r s c a la r R ISC m ic r o p r o c e s s o r f o r e m b e d d e d a p p lic a tio n s .

SOT123

Abstract: SOT-48 sot161 SOT160 SOT-123 BLV32F BFQ68 Applications BLV36 blw86 BLW76
Contextual Info: - 2 ,1-Ot,r RICHARDSON ELECTRONICS m* 3M « ir> 14E 0 7734flciö 0000503 T w -iw .« '» ir f if r r fff Transistors for Broadcast Applications Philips FM Broadcast 87-108 MHz Bipolar Ttansistors Load Power @108 MHz W Type Number Power Gain @ 108 MHz (dB)

SSR1045

Contextual Info: PRELIMINARY S S R 1 0 45 r, SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La M irada,CA 90638 Phone: 714 670-SSDI (7734) F ax : (714) 522-7424 10 AMP 45 VOLTS SCHOTTKY RECTIFIER Designer’s Data Sheet FEATURES: • ■ ■ ■ ■ ■ Low Reverse Leakage

2N3501

Abstract: SFTX3501-3X-16Q VCB75
Contextual Info: ipirinill a a la f II mm m K n PRELIMINARY S X 3J 5J y0 1I -3 X -116 0x UF 1T 1A vA UV SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 TRIPLE UNCOMMITTED 300mA 150 Volt NPN TRANSISTOR

GMM7734230

Contextual Info: GMM7734230CTG-6/7 LG Semicon Co.,Ltd. 4,194,304 WORDS x 72 BIT CMOS DYNAMIC RAM MODULE Description Features The G M M 7734230CTG is a 4M x 72 bits Dynamic RAM MODULE which is assembled 18 pieces o f 4M x 4bit DRAMs in 24/26 pin TSOP n package and two 16bit driver ICs in

Contextual Info: GMM7734143CSG-6/7 LG Semicon Co.,Ltd. 4,194,304 W ORDS x 72BIT CMOS EDO DYNAMIC RAM MODULE Description Features The G M M 7734143CSG is a 4M x 72 bits EDO Dynamic RAM MODULE which is assembled 18 pieces o f 4M x 4bit EDO DRAMs in 24/26 pin SOJ package, one 2K EEPROM for SPD in

Contextual Info: GMM7734J OOCT/TG-6/7 LG Semicon Co.,Ltd. 4,194,304 W O RD S x 72 BIT CMOS DYNAMIC RAM MODULE Description Features T he G M M 7734100C T /T C is an 4M x 72 bits D ynam ic RAM M ODULE w hich is assem bled 18 pieces o f 4M x 4b it DRA M s in 24 pin TSOP n package and tw o

Contextual Info: • , OQ . „ l4 . GMM7734230CLTG-6 4,194,304 words x 72 bit LG Semicon Co.,Ltd. CMOS DYNAMIC RAM MODULE Description Features T he G M M 7734230C L T G is a 4M x 72 bits D ynam ic R A M M O D U L E w hich is assem bled 18 pieces o f 4M x 4bit D R A M s in 24/2 6 pin

Z80 CPU PHYSICAL DIMENSIONS LCC

Contextual Info: F IN A L a Am85C30 AdvaMn“2 Enhanced Serial Communications Controller Devices DISTINCTIVE CHARACTERISTICS — Programmable CRC generators and checkers • — SDLC/HDLC support includes frame control, zero insertion and deletion, abort, and residue handling

Contextual Info: GMM7734200CS/SG-6/7 LG Semicon Co.,Ltd. 4 ,194,304 W O RD S x 72 BIT CMOS DYNAMIC RAM MODULE Description Features T he G M M 7734200C S/SG is an 4M x 72 bits D ynam ic RAM M O D U LE w hich is assem bled 18 pieces o f 4M x 4bit D RA M s in 24 pin SOJ package and tw o 16bit driver ICs in 48pin

CJ930

Abstract: BELDEN 8242 BELDEN 9251 BELDEN 9880 RG88A 9913F C1180 LMR-400 RFU-503 AA4478
Contextual Info: PARTN O THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO RF INDUSTRIES, ANY UNAUTHORIZED USE OF THIS DRAWING IS EXPRESSLY PROHIBITED WITHOUT WRITTEN PERMISSION FROM RF INDUSTRIES. ANY VIOLATION IS PUNISHABLE UNDER U .S. COPYRIGHT LAWS. R F U -503 DESCRIPTION

Contextual Info: GMM7734110CS/SG-6/7 LG Semicon Co.,Ltd. 4,194,304 W O R D S x 72 BIT CMOS EDO DYNAMIC RAM MODULE Description Features The G M M 77341IO C S /S G is an 4M x 72 bits EDO D ynam ic RA M M O D U L E w hich is assem bled 18 pieces o f 4M x 4bit EDO D R A M s in 24 pin SO J package, tw o 16bit

Contextual Info: GMM773421OCS/SG-6/7 LG Semicon Co.,Ltd. 4,194,304 W O R D S x 72 BIT CMOS EDO DYNAMIC RAM MODULE Description Features The G M M 7734210C S /S G is an 4M x 72 bits E D O D ynam ic RAM M O D U L E w hich is assem bled 18 pieces o f 4M x 4b it EDO D RA M s in 24 pin SO J package, tw o 16bit