F 5082 Search Results

HP 4351

Abstract: 5082-4350 5082-4351 HP 4352 5082-4352 HP 4360 photon detector 4350 435X E55361
Contextual Info: H EW LETTj f ÿ PACKARD COMPONENTS HIGH SPEED OPTICALLY COUPLED ISOLATORS 5082-4350 5082-4351 5082-4352 T E C H N IC A L D A T A A P R IL 1976 t f i f f l — S C H E M A T IC O U T L IN E D R A W •f » i „N U M B E R s L 'a ! cor>F mm * Ul RECOGNITIO N

TLR313

Abstract: TLR352 TLR-313 TLR312 s336t TLR353 TLRA347S NAR103 NAR105 NAR107
Contextual Info: -66- •i t ^ È•J f t ü it fe 3 Í/ - 7 / - K £ X f-IKI? ses H ö m m itm f t j\ 'æ Ta= 25’0 W liiÜ TSŒ S ta f f i« $ s + t £ I f Ap AA I f Iv (nm (nm) (mA) (mcd) (mA) # v —y W (V ) I f la (mA) (/¿A) I f Vu (V) (mA) {T „ = 25°C) m ím %

NKY243

Abstract: NKA263 GL-7H202 7 GL6S220 GL7S220 LB-302DP NAA241 NAA245F NAA247F NKA241
Contextual Info: -81 - 1Ê % tt .T / - K £ •% ¥ è’] f t 'lï ; Tu -25’G D — jL ft ~k <E fê T „= 25=0 fli- À ìr r a Ki y ^ AP AA I f 1V I f (nm’ (nm} i.mA) (mcd) im Al 3 i> ^ V - F LB-302DP íf ft A £ a VF Vu I f XlSìfc i f f E I f Vr m m m Dp m i T)

Y224

Abstract: a081b LC321664 na6062 y3016 raspi X16V
Contextual Info: K No. N5082A NO. 5082A 11896 RM&=i3.-X Na^6O02 ¿ 2 l/rt'A.'C« CM OS L S I LC321664BJ,BM,BT-70/80 — —K /<-f f 7 > i h im 65536v - i # f e S draivi 1RS IP LC321664BJ, BM, BTI±, 655367- K x i B f c í y * 8 ft, , OíÍ8 0 & £ t, *>i :3 V t ’ 3. — íi

GL8E03D

Abstract: TLR371 GL9E03D SL-2189 GL8D06 GL9E04 GL8E03 SL-2129 LA-101MF LA-101MP
Contextual Info: -72- * % t > ^t î± £ 'f -f ¡ f- r tí 14 ± ¥ m & t „ = 25°C iTu = 25:C> ft Dp NItsfc jilF F . A/> ¡nm) AA inm ; I f 'm A ) I V ;m cd) 'F (mA'i Vf ¡V ) Vr (V Ì I f VR fijfpim .it W <7) m UnA) I R (m A ) (m A ) 1 .V i 1"C) re i 1.0 N4 Gap 563

mr 6710

Abstract: LB-6910 SL-1264 ad T635 MAN6110 LB-6740 LN5240K MAN6140 LB6910 LN526RA
Contextual Info: -7 8- E 51 • i t sy g it u í> -T /- K % i-i > -f ’• + r tí ft • * ’/ — K f t [T„ = 2 5 ;a M * j£ f '± kr nm AA I f (nm) im A ) V I f (m od) (m A) I vF (V) I f I r im A ) (m A ) Æ m ( Ta = 25SC> Dp iôfH&SÊ m i <7) IS - vR (V ) I f K*

NARG161

Abstract: SL-5139-10 HDSP-F501 SL-5139 5603 HDSP-4601 HDSP-4603 HDSP-5601 HDSP-5603 HDSP-8601
Contextual Info: -75- _ t th £ kk 2fe -7 /-] • 3 ^ fi-J # f t - h 5e tS < T a = 25“C'- 14 i T a = 25”C f t ^ .M it Id S £ n o I E % • -3fc ¥ -f Xp - t'/- K AA nm) I f I V I F I f i.V> l i t i£fi± I f V* im A 1' iV ) Dp *7 t; ) m i <D m fS l \° o re) ¡mcd')

tlr306

Abstract: HDSP-3733 TLR308 IC MAN6760 HDSP-3731 HP 5082-7651 HDSP-F003 HP 5082-7653 hp 5082-7750 hp 5082-7751
Contextual Info: -6 2 - IE f£ ffy £ it tfc £ its ? & £ fe /-K á' •± ¥ m # i i r „ = 25°C f t Jz Æ fë íT<,-= 25°C) ks > ipfifu n n A.P (nm) -£ v —K AX I f (nm) Im A) Iv I f Vf I f (m A) (V) 30 10 —5 5 —100 - 5 5 —100 33 5 30 10 —55—100 -5 5 -1 0 0

DL-7750R

Abstract: HD1131R DL7750R HD11050 hd11310 NARG161 HD-11330 HD1075 HD-11310 DL-76510
Contextual Info: -65- « « 'S g it tfc ?, 1-f y 4-1 fe 3 * > ‘7 / “ K * tr > -f- V K K w •7t ¥ m f t ~k. f t 1 Í 7 ’^ 2 5 - C fö \7'„ = 25:C i Dp WHtit iá t . E n Xp (nm' AA (nm) 1F (m A ) G a A IA s 660 20 10 •9] y — K lv im cd) I f (m A ) (V ) 10 3.4

ap 4606

Abstract: HDSP-4606 SI 4606 8 pin ic 4606 ap 4606 ic NSG101 NSG103 NSG103P NSG161 NSG161P
Contextual Info: -6 1 - 1E % • ± 8 S fa f# 11; i T„ = 25=C' -k -H fá T„ = 25‘C Dp ít % ñ ^ íisjiirC F k í -f ■ s e s tí Xp ínm¡ I f ínm ! im A i I y It '•m cd ! im A í Vf ■;v ÌF ; m A) i* fJL/IL n 2 Í / - Í V - V í-í: ¥ £ I r vR i VÌ I f

Contextual Info: 5082-1351 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.4.4p C1/C2 Min. Capacitance Ratio5.4 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.1.7k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: 5082-1346 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.820f C1/C2 Min. Capacitance Ratio4.0 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2.5k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: 5082-1349 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.6pì C1/C2 Min. Capacitance Ratio5.0 V(RRM)(V) Rep.Pk.Rev. Voltage45 Q Factor Min.2.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: 5082-2707 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandA-F Test Freq9.4G Frequency Min. (Hz) Frequency Max. (Hz)4.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5

Contextual Info: 5082-2565 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandE-F Test Freq3.0G Frequency Min. (Hz)2.0G Frequency Max. (Hz)4.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0

Contextual Info: 5082-3071 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V @I(R) (A) (Test Condition) r(s) Max.(ê) Series Resist. @If (A) Ct{Cj} Nom. (F) Junction Cap. Carrier Lifetime (S) @I(F) (test) (A) @I(R) (A) (Test Condition) Maximum Operating Temp (øC)125

Contextual Info: 5082-2520 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandE-F Test Freq3.0G Frequency Min. (Hz)2.0G Frequency Max. (Hz)4.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.0

Contextual Info: 5082-2566 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandE-F Test Freq3.0G Frequency Min. (Hz)2.0G Frequency Max. (Hz)4.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0

5082-0833

Contextual Info: 5082-0833 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.6pò C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage Q Factor Min. f(co) Min. (Hz) Cut-off freq.175G P(D) Max. (W) Semiconductor Material Package StyleAxial-4 Mounting StyleT

Contextual Info: 5082-3051 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 1.0k @I(R) (A) (Test Condition) r(s) Max.(ê) Series Resist.600 @If (A) Ct{Cj} Nom. (F) Junction Cap.500f Carrier Lifetime (S) @I(F) (test) (A) @I(R) (A) (Test Condition) Maximum Operating Temp (øC)

Contextual Info: 5082-3052 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 1.0k @I(R) (A) (Test Condition) r(s) Max.(ê) Series Resist.900 @If (A) Ct{Cj} Nom. (F) Junction Cap.500f Carrier Lifetime (S) @I(F) (test) (A) @I(R) (A) (Test Condition) Maximum Operating Temp (øC)

diode 5082-3168

Contextual Info: 5082-3168 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 35 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.0.6 @If (A)10m Ct{Cj} Nom. (F) Junction Cap.2.0pò Carrier Lifetime (S)70n @I(F) (test) (A)10m @I(R) (A) (Test Condition)6m

Contextual Info: 5082-3042 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 70 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.1.0 @If (A)20m Ct{Cj} Nom. (F) Junction Cap.4pò Carrier Lifetime (S)35n @I(F) (test) (A)10m @I(R) (A) (Test Condition)6m

Contextual Info: 5082-3304 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 250 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.1.2 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.32p Carrier Lifetime (S)100n @I(F) (test) (A)50m @I(R) (A) (Test Condition)250m