TRANSISTOR 434
Abstract: BFP650 HOME AUTOMATION USING GSM AN196 BFR380F bf 434 BFP450 ag 20 taiyo BFR380 RF MODULE 434Mhz
Text: BF R38 0F Dri v er A m pl i fer fo r 434 M Hz I S MBan d A ppl i c ati ons Appl i c ati o n N ote A N 196 Revision: Rev1.1 2010-09-28 RF and P r otec ti on D evi c es Edition 2010-09-28 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG
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AN196,
BFR380F
AN196
TRANSISTOR 434
BFP650
HOME AUTOMATION USING GSM
AN196
BFR380F
bf 434
BFP450
ag 20 taiyo
BFR380
RF MODULE 434Mhz
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Cordless Phone circuit diagram
Abstract: 2.4GHz Cordless Phone circuit diagram BFP750 cordless phone circuit S parameters of 5.8 GHz transistor SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR RF MODULE CIRCUIT DIAGRAM dect Cordless Phone system block diagram murata wifi saw filter cordless phone ic
Text: BF P750 BF P750 a s a Dri ve r A mpl i fi er for 5.8 G Hz Cor dl es s P hon e A ppl i c a t i ons Appl i c ati o n N ote A N 246 Revision: Rev 1.1 2010-09-24 RF and P r otec ti on D evi c es Edition 2010-09-24 Published by Infineon Technologies AG 81726 Munich, Germany
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limitation111
5000MHz
BFP750
AN246,
BFP750
AN246
Cordless Phone circuit diagram
2.4GHz Cordless Phone circuit diagram
cordless phone circuit
S parameters of 5.8 GHz transistor
SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR
RF MODULE CIRCUIT DIAGRAM dect
Cordless Phone system block diagram
murata wifi saw filter
cordless phone ic
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tea 1601 t
Abstract: tea1601 TEA1601 PHILIPS tea 1601 C2026 K C2026 Y transistor C2026 2SK2810 J10MM AN00013
Text: APPLICATION NOTE 26kV/30W High Voltage Generator with TEA1601 Resonic controller AN00013 Philips Semiconductors Philips Semiconductors O:; ,-+, :308%+ +)2)6%836 ;-8, 8)% 6)732-' '3286300)6 Application Note AN00013 Abstract 8LMW VITSVX HIWGVMFIW E ,MKL :SPXEKI +IRIVEXSV ; VIWSRERX 7147 JSV QSRMXSV ERH XIPIZMWMSR ETTPMGEXMSR FEWIH YTSR XLI 8)%
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26kV/30W
TEA1601
AN00013
tea 1601 t
tea1601
TEA1601 PHILIPS
tea 1601
C2026
K C2026 Y
transistor C2026
2SK2810
J10MM
AN00013
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HDMI SWITCH SCHEMATIC
Abstract: No abstract text available
Text: PRELIMINARY CM20LT Features • • • • • • Product Description Long HDMI cable support with integrated I2C accelerator Low Capacitance DDC for HDMI Compliance Translates I2C level to CMOS level on DDC line Overcurrent output protection for Source
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CM20LT
2006California
CM20LT
HDMI SWITCH SCHEMATIC
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NGA-689
Abstract: AGB3307 GA68
Text: Quick Reference Guide Using the AGB3307 as a Replacement for the NGA-689 The AGB3307 InGaP HBT Gain Block from ANADIGICS is a wideband device with high linearity, low noise and low distortion that can be used as a replacement for the NGA-689 device from Sirenza Microdevices. Both
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AGB3307
NGA-689
NGA-689
OT-89
GA-689
GA68
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W88W
Abstract: NGA-589 AGB3303 ww39
Text: Quick Reference Guide Using the AGB3303 as a Replacement for the NGA-589 The AGB3303 InGaP HBT Gain Block from ANADIGICS is a wideband device with high linearity, low noise and low distortion that can be used as a replacement for the NGA-589 device from Sirenza Microdevices. Both
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AGB3303
NGA-589
NGA-589
OT-89
GA-589
W88W
ww39
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AGB3302
Abstract: NGA-489 ga649
Text: Quick Reference Guide Using the AGB3302 as a Replacement for the NGA-489 The AGB3302 InGaP HBT Gain Block from ANADIGICS is a wideband device with high linearity, low noise and low distortion that can be used as a replacement for the NGA-489 device from Sirenza Microdevices. Both
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AGB3302
NGA-489
NGA-489
OT-89
GA-649
ga649
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10uf electrolytic
Abstract: MS-012AA SC1540 SC1540A
Text: SC1540 A 300mA And 500mA Low Dropout Voltage Regulators With Enable POWER MANAGEMENT Description PRELIMINARY Features u u u u The SC1540 and SC1540A are high performance low dropout positive voltage regulators designed for use in applications where power management is critical, such
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SC1540
300mA
500mA
SC1540A
300mA.
10uf electrolytic
MS-012AA
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MCH18
Abstract: MCR03 SPA-1118 SPA-1118Z TAJB106K020R
Text: SPA-1118 Product Description Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-1118
SPA-1118
SPA-1118Z
EDS-101427
MCH18
MCR03
SPA-1118Z
TAJB106K020R
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EE80251S1-0000-A99
Abstract: No abstract text available
Text: SUNON SPECIFICATION FOR APPROVAL . j CUSTOMER DESCRIPTION DC BRUSHLESS FAN DIMENSIONS 80X80X25 mm MODEL EE80251SI-0000-A99 SUNON SPEC. NO. D08029840G-00 CUSTOMER APPROVAL NO. APPROVED BY CUSTOMER AUTHORIZED / 41 DRAWN Evi r J y CHECKED APPROVED 4 /3
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80X80X25
EE80251S1-0000-A99
D08029840G-00
Inch-H20
3500ppm
4000ppm
20ppm
100ppm
C10-13,
100ppm
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MC10H181
Abstract: MC1672
Text: B PIN ASSIGNMENT oi ÿ J J i 'è S Z 2 n n n n n n n n < in i i i i i c s s i 350 270 1 Z M m i i i i i i i i i c i c <0 C X X C C at ^ in o o> o j evi o i o i o> oi CO oi I I I O) O ^ 9 r N N N I i i m oi OJ oi i I <- CN CO CO evi CN CM* eg fx. CN CN i I I i
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Untitled
Abstract: No abstract text available
Text: 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 131,072x18 262,144x18 PRELIMINARY IDT72V295 IDT72V2105 Irtegiated D eviœ Technology, lie . FEATURES: • Choose among the following memory organizations: IDT72V295 131,072x 18 IDT72V2105 262,144x 18 • Pin-compatible with the IDT72V255/72V265 and the
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072x18
144x18
IDT72V295
IDT72V2105
IDT72V2105
IDT72V255/72V265
IDT72V275/72V285
PN64-1)
72V295
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Untitled
Abstract: No abstract text available
Text: Æutran PRODUCT D EVI CE S .I NC . N-CHANNEL ENHANCEMENT MOS FET 3301 ELECTRONICS WAY • WEST P ALM BEACH, FLORIDA 33407 TEL: 407 8 4 8 - 4 3 1 1 • TLX: 51-343S « F A X : (407) 863-5946 ABSOLUTE MAXIMUM 1000V, 4.4A, 4 . on RATINGS PARAMETER UNITS SYMBOL
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51-343S
A47-1
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72V3680
Abstract: No abstract text available
Text: Irtegiated D eviœ Technology, lie . 3.3 VOLT HIGH-DENSITY SUPERSYNC II 36-BIT FIFO 4,096 x 36 8,192 x 36 16,384x36 32,768 x 36 65,536 x 36 131,072x36 FEATURES: • Choose among the following memory organizations: IDT72V3660 4,096 x 36 IDT72V3670 8 ,1 9 2x3 6
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36-BIT
384x36
072x36
IDT72V3660
IDT72V3670
IDT72V3680
IDT72V3690
IDT72V36100
IDT72V36110
72V3680
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MX23256
Abstract: MX23256-15PC 27256 EPROM 25256 tny 178 tm 1640
Text: MACRONIX 34Ê INC MX23256/57 D • 5bööööE DDQD17Q 3 .EVI p r e l im in a r y 3 2 ,7 6 8 X 8 STATIC READ ONLY MEMORY T ^ - g - is FEATURES DESCRIPTION . 32,768 X 8-bit organization . Access time - 150 ns max . Current-Operating; 80 mA max Standby: 20 mA max
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DDQD17Q
MX23256/57
28-pin
MX23256
MX23257
MX23256/57
000sq.
MX23256-15PC
27256 EPROM
25256
tny 178
tm 1640
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Untitled
Abstract: No abstract text available
Text: REV. R EVI SI ON S ECN NO. A DRN. CKD. APP. NEW RELEASE DATE M.C. >— . 0 5 0 TYP 12 PLCS . 1 0 0 TYP; 12 PLCS .692 ± .0 0 7 . 0 7 9 D I A NOM MOUNTING P I N S TYP; 4 PLCS . 1 4 0 ± . 0 0 3 —i TYP T ~ r 0 . 0 7 6 ±.002 TYP; 4 PLCS . 1 7 5 TYP 1 2 80 ± . 0 0 3 _
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12-ELEMENT
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XC-880-A
Abstract: NSM4000A NSM3915 NSM4000 5252 f 1101 PAGE 29 National Semiconductor CAT 84 XC-556-R nsm1416 NSM3914 XC-88-PD
Text: Z CCUj OS II o iA a. evi e o c o ^ "'3 '^ '^ r^ -^ '^ r'» -^ '^ -« 3 -T i-^ -^ i-in in i'« -r''r'-C M e M C \ic \je \ic M C M e \ic N C M C \jc N c v jc M e M C M C M c \jc o o o c o e o o o e o c o o o e o o o c o e o e o c o e o o o c b c ò '-'-’- ’- T - ' - T - i - T - i - i - T - i - i - T - i - i n i n n M M n w w w n e o c o e o m w w c o w n n n n w c o n n c o n n w c o w n n M c o n m M c o c o '
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nsl6154
mv5154
nsl6252
mv5252
nsl6253
mv5253
nsl6254
mv5254
nsl6352
mv5352
XC-880-A
NSM4000A
NSM3915
NSM4000
5252 f 1101
PAGE 29 National Semiconductor CAT 84
XC-556-R
nsm1416
NSM3914
XC-88-PD
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XC-554-R
Abstract: NSM3914 NSM4000A XC-556-R NSM3915 XC-55-PC nsm1416 NSM-1416 NSM4000 nsm39148
Text: Z o iA a. evi C CUj OS II e o c o ^ "'3 '^ '^ r^ -^ '^ r'» -^ '^ -« 3 -T i-^ -^ i-in in i'« -r''r'-C M e M C \ic \je \ic M C M e \ic N C M C \jc N c v jc M e M C M C M c \jc o o o c o e o o o e o c o o o e o o o c o e o e o c o e o o o c b c ò '-'-’- ’- T - ' - T - i - T - i - i - T - i - i - T - i - i n i n n M M n w w w n e o c o e o m w w c o w n n n n w c o n n c o n n w c o w n n M c o n m M c o c o '
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nsl6154
mv5154
nsl6252
mv5252
nsl6253
mv5253
nsl6254
mv5254
nsl6352
mv5352
XC-554-R
NSM3914
NSM4000A
XC-556-R
NSM3915
XC-55-PC
nsm1416
NSM-1416
NSM4000
nsm39148
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kt 784
Abstract: ci 4081 L 7206 80651 IR 9530
Text: H MS— m M ICITiSGrni PfS^is-sï^ is-y7aefcrt«toçy 140 Com m erce Drive T e l: 2 1 5 6 3 1 -9 8 4 0 1893M013 co Dp 1u 3m3 1i RF & MICROWAVE TRANSISTORS UHF SMALL SIGNAL . . « . HIGH F fn - 6 GHz VERY LOW NOISE ALL GOLD METALLIZATION HERMETIC PACKAGE
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SD1331
SD1331
kt 784
ci 4081
L 7206
80651
IR 9530
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11ES 04
Abstract: ph 77 H-18 W-10 FCR48 IT 8755 E
Text: IC dependence of oscillating characteristics uPD784038GC. FCR4.0MC5 - STD Room Temp. Vdd CV3 5 Item a*e Rd Cohml 3300 UPD784038GC. - H-10 FCR4.0MC5 Vdd- 5 CV] (Flg.a-d) Ta- 20 CdegJ Typical Daaping re»I«tance(Rd) dependence of osci lilting characteristic!
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uPD784038GC
94039GC.
UPD784038GC.
11ES 04
ph 77
H-18
W-10
FCR48
IT 8755 E
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TC-2511
Abstract: tv horizontal output number 2SD1709 m 150 diode
Text: C o n tin u e d fro m preceding page. Absolute Maamum RaUngsT,= 25"C Type •.Case ■. Applications VcBO Vceo V sbq Ic Kiectriul Chuacurwtica/T,= 25t taso Ti *TC=•2511 Number fens V« au ] Vcs m m £V3 fA] IWj [Ai [VI T0220 T0220 High-Definition Display Hor. Def. Output
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2SC3590
2SC3591
2SC4075
02SA1696
02SC4473
T0220
T0220ML
TC-2511
tv horizontal output number
2SD1709
m 150 diode
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Untitled
Abstract: No abstract text available
Text: cv V A N A I M A M D T FINAL C 0M 'L:-7/10/12/15 IND:-10/12/15/20 M A C H 5 -5 1 2 /M A C H 5 L V -5 1 2 I S C O M P A N Y MACH5-51 2/1 20-7/10/1 2/1 5 MACH5-512/192-7/10/12/15 MACH5-512/160-7/10/12/15 MACH5-512/256-7/10/12/15 MACH5-512/184-7/10/12/15 MACH5LV-512/120-7/10/12/15
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MACH5-51
MACH5-512/160-7/10/12/15
MACH5-512/192-7/10/12/15
MACH5-512/256-7/10/12/15
MACH5LV-512/160-7/10/12/15
MACH5LV-512/184-7/10/12/15
MACH5-512/184-7/10/12/15
MACH5LV-512/120-7/10/12/15
MACH5LV-512/192-7/10/12/15
BGD352
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ICX404AL
Abstract: sony ccd 1080 ccd sony super HAD II super had ccd H01-H02 ACXD1267AN X492 ZE12 ccd sony super HAD 2 ccd sony super HAD
Text: SO N Y ftÄ 6 m m ICX404AL 1 / 3 1 ! E IA Él If ST IC X 404A L{iEIA ^^:i7)^Ä 6m m ( l / 3 M ) Ê H tf T * * # ^ 7 C Ü L /c > i > ? 7 'f ^ C C D ^ f ö t i f f # i'C l'o « p°ICX054BL^^L, 1/ > V , S/N& 7 >f -)V YMMWifrlti Jgjg, * 5 7, D LtLtZo "TIS& H -Í- '> -V 7 ? f ë f ê ÿ ^ L Í 't o
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ICX404AL
ICX404AL
PdPICX054BL^
tlCX054BLifc)
-20dB
jlCX054BLJt)
flGX054BLj
J00606D3Z
sony ccd 1080
ccd sony super HAD II
super had ccd
H01-H02
ACXD1267AN
X492
ZE12
ccd sony super HAD 2
ccd sony super HAD
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Untitled
Abstract: No abstract text available
Text: PANASONIC INDL/ELEK -CIC> 72 6932852 P ANA SON IC ] F § b c]32ßS2 GOGbMAD 7 f " IND LtELECTRON IC 72C 0 64 8 0 D _ > Tan 3304 M N 3 3 4 Æ ) 5 1 2 & S fë f|J± B B D 512-Stage U lt r a L o w V o ltag e O peration B B D H M N 3304 ü ia-i£K&512fô
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512-Stage
MN3304
256msâ
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