Untitled
Abstract: No abstract text available
Text: Get Plugged In with CarolGrene Ultra Flex EV Cables Charging Forward with Portable Power for Hybrid & Electric Vehicles General Cable’s new line of Carol® Brand CarolGrene™ Ultra Flex® EV Cables supplies charging power for all electric vehicles on the market today and is
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CAR-0137-0711
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GPS3 CLICK
Abstract: CONNECTEVE MIKROE-1626 MIKROE-1744
Text: development solutions www.mikroe.com CONTENT: 5 PIC development solution 19 mikromedia boards 48 7 PIC32 development solution 22 mikromedia accessories 49 Community 8 dsPIC development solution 23 mikromedia plus 53 Contract manufacturing 9 AVR development solution
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PIC32
STM32
FT90x
Easy8051,
GPS3 CLICK
CONNECTEVE
MIKROE-1626
MIKROE-1744
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CR2016
Abstract: CR2016 t 26
Text: T echnical Specification ENERGY VERY ENDURE CR2016 M anganese D ioxide Lithium Coin Batteries TEMPERATURE CHARACTERISTICS Dimensions mm Voltage(V) Load Duration(h) SPECIFICATION Nominal voltage (V) 3 Nominal capacity (mAh) 80 OPERATING VOLTAGE VS. LOAD RESISTANCE
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CR2016
V0408
CR2016
CR2016 t 26
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EVE Battery
Abstract: P 752 D CR1616
Text: T echnical Specification ENERGY VERY ENDURE CR1616 M anganese D ioxide Lithium Coin Batteries TEMPERATURE CHARACTERISTICS Dimensions mm Voltage(V) Load Duration(h) SPECIFICATION Nominal voltage (V) 3 Nominal capacity (mAh) 50 Continuous standard load (mA)
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CR1616
V0408
EVE Battery
P 752 D
CR1616
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EVE Battery
Abstract: CR2354 CR2354 equivalent
Text: T echnical Specification ENERGY VERY ENDURE CR2354 M anganese D ioxide Lithium Coin Batteries TEMPERATURE CHARACTERISTICS Dimensions mm Voltage(V) Load Duration(h) SPECIFICATION Nominal voltage (V) 3 Nominal capacity (mAh) 500 Continuous standard load (mA)
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CR2354
V0408
EVE Battery
CR2354
CR2354 equivalent
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EVE Battery
Abstract: battery CR2025 CR2025 250 C 60
Text: T echnical Specification ENERGY VERY ENDURE CR2025 M anganese D ioxide Lithium Coin Batteries TEMPERATURE CHARACTERISTICS Dimensions mm Load: 15k 60 C (190 µA) 3.0 Voltage (V) 20 C -10 C 2.5 2.0 ~ ~ 100 200 300 400 500 600 700 800 900 Duration (h) SPECIFICATION
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CR2025
V0408
EVE Battery
battery CR2025
CR2025
250 C 60
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IEC-61000-4-15
Abstract: IEC-61000-4-7 IEC-61000-430 EN-61000-4-15 EN50160 QNA-412 M54020 circutor rf based automatic energy meter EN61000-4-15 M54040
Text: Q.2 Power Quality Analyzers Power Quality Electrical power quality is the measurement and analysis of the voltage delivered to customers. These parameters voltage amplitude, flicker, harmonics, unbalance describe the voltage waveform and offer very important information about the
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Q2-19
C3Q023-01
Q2-20
IEC-61000-4-15
IEC-61000-4-7
IEC-61000-430
EN-61000-4-15
EN50160
QNA-412
M54020 circutor
rf based automatic energy meter
EN61000-4-15
M54040
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pseudo random noise sequence generator notes
Abstract: program for random number generator pseudo random sequence generator application computer hardware and networking text book
Text: Random Numbers in Data Security Systems Intel Random Number Generator Scott Durrant Intel Platform Security Division Random Numbers in Data Security Systems Information in this document is provided in connection with Intel products. No license, express or implied, by
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gov/fips/fips1401
pseudo random noise sequence generator notes
program for random number generator
pseudo random sequence generator application
computer hardware and networking text book
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L94HB
Abstract: Rt612 20HR
Text: RT 612 6V1.2Ah RT612 is a general purpose battery with 5 years life in standby servi ce, or mor e than 260 cycles at 100% D.O.D by cyclic use. As with all Ritar batteries, al l RT models are rechargeable, highly efficient, leak proof and maintenance free.
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RT612
L94HB
20HR
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HI-8000
Abstract: 8085 microprocessor realtime application MC146805 diagram 5v supply chrysler MC6801 8085 clock 8085 realtime application circuit CLOCK ALARM 8085 CLOCK ALARM 8085 chrysler hex
Text: ¥ If Q A A A n i 'O U U U T0S R E A L T IM E LOW -POW ERAi PROCESSOR COMPATIBLE C LO C K /TIM ER /A LA R M / C A LENDARS/STO PW ATCH/EVE NT COUNTER O O 3D > o m ^ > H a m v I T l L • • • • • Multiplex address/data bus for easy interface to MC1 468 05 , M C 6801, 8 0 8 5
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MC6801,
hi-8000
HI-8000
8085 microprocessor realtime application
MC146805
diagram 5v supply chrysler
MC6801
8085 clock
8085 realtime application
circuit CLOCK ALARM 8085
CLOCK ALARM 8085
chrysler hex
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transistor NEC D 882 p
Abstract: transistor NEC 882 p nec d 882 p transistor NEC b 882 p transistor NEC b 882 transistor nec d 882 TRANSISTOR b 882 p nec d 882 p transistor transistor transistor NEC 882 2s D 882 p
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Low Vdd Use PACKAGE DIMENSIONS Unit: mm ( V ds = 3 . 5 V ) Driving Battery Low Noise Figure NF = 1.8 dB TYP. (f = 900 MHz)
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3SK255
transistor NEC D 882 p
transistor NEC 882 p
nec d 882 p
transistor NEC b 882 p
transistor NEC b 882
transistor nec d 882
TRANSISTOR b 882 p
nec d 882 p transistor transistor
transistor NEC 882
2s D 882 p
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Low V dd Use • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. f = 470 MHz
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3SK254
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK253 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES Low V dd Use PACKAGE DIMENSIONS = 3 .5 V V ds (Unit: mm) Driving Battery Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz)
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3SK253
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES Preliminary Technical Data DSP Microcomputer ADSP-2188M FEATURES Performance 12.5 ns Instruction Cycle Time @ 2.5 Volts internal , 75 MIPS Sustained Performance Single-Cycle Instruction Execution Single-Cycle Context Switch 3-Bus Architecture Allows Dual Operand Fetches in Every Instruction Cycle
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ADSP-2188M
ADSP-2100
ADSP-2188M
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Low V dd Use • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. f = 470 MHz
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3SK254
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK252 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low V dd Use • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. f = 470 MHz • High Power Gain
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3SK252
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m5M418128
Abstract: M5M418128AJ-7
Text: MITSUBISHI LSIs M 5 M 4 1 8 1 2 8 A J - 5 , - 6 , - 7 , - 5 S , - 6 S , - 7 S FAST PAGE MODE 1048576-BIT t31072-WQRD BY 8-BIT DYNAMIC RAM DESCRIPTION This is a family of 131072-word by 8-bit dynamic RAMs, fabricated with a high perform ance CMOS process, and is ideal for
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1048576-BIT
t31072-WQRD
131072-word
256/4m
M5M418128AJ-5
m5M418128
M5M418128AJ-7
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Untitled
Abstract: No abstract text available
Text: ¿ Z 7 SGSTHO M SON L9360 DUAL INJECTION DRIVER A D V A N C E DATA . • ■ . . ■ W IDE SUPPLY RANGE 5 .5 -4 0 V VERY LOW ON RESISTANCE (TYP. 250mi2) O U TPUT CURRENT UP TO 2A HIGH PERFO RM ANCE DIAGNOSTIC UNDERVO LTAG E DISABLE O VERVO LTAG E AND SHO RT CIRCUIT PRO
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L9360
250mi2)
L9360
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0x2000a
Abstract: No abstract text available
Text: ANALOG DEVICES □ Preliminary Technical Data DSP Microcomputer ADSP-2189M FEATURES Performance 13.3 ns Instruction Cycle Tim e @ 2.5 Volts internal , 75 M IPS Sustained Performance Single-Cycle Instruction Execution Single-Cycle C ontext Switch 3-Bus A rchitecture Allows D ual O perand Fetches in Every Instruction Cycle
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ADSP-2189M
SP-2100
100-Lead
SP-2189MKST-300X
SP-2189MBST-266x
0x2000a
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Supertex smoke detector circuit
Abstract: No abstract text available
Text: Supertex inc. SD2 CMOS Photo-Electric Smoke Detector Integrated Circuit Ordering Information General Description Package Options Not recommended for new designs. 16-Pin P lastic Dip S O W -20 SD 2P S D 2W G T his lo w po w e r C M O S circu it is in te nd ed for use in a pulsed LED /
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16-Pin
Supertex smoke detector circuit
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Untitled
Abstract: No abstract text available
Text: SD2 — _ CMOS Photo-Electric Smoke Detector Integrated Circuit Ordering Information General Description Device Package Order No. SD 2 16-Pin P lastic SD 2P SD 2 S O W -20 S D 2W G T his lo w po w e r C M O S c ircu it is intended fo r use in a pulsed LE D /
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16-pin
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26c6 tube
Abstract: 6SR7 26c6 diode Scans-0017373 6sR7 tube
Text: 26C 6 DUPLEX-DIODE TRIODE M IN IA T U R E TYPE Fo r use w ith 12-cell storage-battery su pply GENERAL DATA El ec tr ic a l : H e a te r, f o r U n ip o t e n t ia l Cathode: V o lt a g e . 2 6 .5 . ac o r dc v o l t s
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12-celL
92CM-6772
26c6 tube
6SR7
26c6 diode
Scans-0017373
6sR7 tube
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Q1 SC j C D I O D E S / O P T O J D iT | t,3t.75SS DDT^GSfl 7 C228 C228 3 C229 Series S ilic o n Controlled Rectifier Reverse B lo ck in g Triode Thyristor . . designed for industrial and consumer applications such as power supplies, battery chargers, temperature, motor, light and welder controls.
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Untitled
Abstract: No abstract text available
Text: M ITSU B ISH I LSlS M 5 M 4 1 8 1 2 8 A J -5 ,-6 ,-7 ,-5 S ,-6 S ,-7 S FAST PAGE M O DE 1048576-B IT 131Û 72-W O RD BY 8-B IT DYN A M IC RAM DESCRIPTION This is a family of 131072-word by 8-bit dynamic RAMs, fabricated w ith a high perform ance CMOS process, and is ideal for
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1048576-B
131072-word
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