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    EUPEC IGBT CHIP Search Results

    EUPEC IGBT CHIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA
    		Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30N135SRA
    		Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J65MRB
    		Toshiba Electronic Devices & Storage Corporation IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H
    		Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H
    		Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    EUPEC IGBT CHIP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2ED020I12-F1

    Abstract: 2ed020i12 2ED020I12-F general purpose DUAL LOW SIDE DRIVER 2ED020I12 IGBT SCHEMATIC 2ED020I12F P-DSO-18-1 2ED020I12 IGBT driver circuit diagram
    Contextual Info: Datasheet Prepared by: Andreas Volke Approved by: Michael Hornkamp S/N: 010-04 Date of publication: 10.05.2004 Status: Preliminary Data EiceDRIVER 2ED020I12-F Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules eupec GmbH Max-Planck-Straße 5


    Original     		2ED020I12-F D-59581 2ED020I12-F1 2ed020i12 2ED020I12-F general purpose DUAL LOW SIDE DRIVER 2ED020I12 IGBT SCHEMATIC 2ED020I12F P-DSO-18-1 2ED020I12 IGBT driver circuit diagram PDF

    2ED020I12-F1

    Abstract: 2ED020I12-F 2ed020i12 EUPEC TD 56 N 08 2ED020I12-F2 2ED020I12 IGBT driver circuit diagram eupec igbt general purpose DUAL LOW SIDE DRIVER 2ED020I12 IGBT SCHEMATIC igbt modules Michael Hornkamp
    Contextual Info: Datasheet and Application Prepared by: Andreas Volke Approved by: Michael Hornkamp S/N: 010-04 Date of publication: 2003-12-05 Status: Target Data EiceDRIVER 2ED020I12-F Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules eupec GmbH Max-Planck-Straße 5


    Original     		2ED020I12-F D-59581 2ED020I12-F1 2ED020I12-F 2ed020i12 EUPEC TD 56 N 08 2ED020I12-F2 2ED020I12 IGBT driver circuit diagram eupec igbt general purpose DUAL LOW SIDE DRIVER 2ED020I12 IGBT SCHEMATIC igbt modules Michael Hornkamp PDF

    The field stop IGBT FS IGBT

    Abstract: IGBT structure igbt3 igbt2 infineon IGBT3 infineon AN200503 IGBT
    Contextual Info: Application Note Date: 2005-05-11 AN-Number: AN-2005-03 Page 1 SM TM Short Circuit Behaviour of IGBT³ 600 V With the development of eupec’s and Infineon’s latest 600 V IGBT³ technology the short circuit specification of this new chip generation was changed compared to the other eupec / Infineon chip generations.


    Original     		AN-2005-03 D-59581 The field stop IGBT FS IGBT IGBT structure igbt3 igbt2 infineon IGBT3 infineon AN200503 IGBT PDF

    6.5kV IGBT

    Abstract: IGBT Power Module siemens ag infineon igbt reliability siemens IGBT 600a eupec igbt 6500v igbt 6.5kv SiC IGBT High Power Modules, PCIM Hongkong Measurement of stray inductance for IGBT IGBT module FZ siemens igbt inverters
    Contextual Info: 6.5kV IGBT-Modules Franz Auerbach Infineon Technologies Josef Georg Bauer (Siemens AG) Manfred Glantschnig (Infineon Technologies) Jürgen Göttert (eupec GmbH & Co KG) Martin Hierholzer (eupec GmbH & Co KG) Alfred Porst (Infineon Technologies) Daniel Reznik (Siemens AG)


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    FS450R12KE3 S1

    Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
    Contextual Info: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.


    Original     		E-103, FS450R12KE3 S1 infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120 PDF

    A 3150V

    Abstract: HIGH VOLTAGE DIODE 3.3kv 3150v IGBT 3kv Measurement of stray inductance for IGBT FZ1200R33KF1 scsoa IC A 3150V eupec igbt 3.3kv dc motor speed control circuit diagram with IGBT
    Contextual Info: Improved Characteristics of 3.3kV IGBT Modules M.Hierholzer, R.Bayerer, eupec GmbH & Co KG, Warstein, Germany A.Porst, H.Brunner, Siemens AG, München, Germany 3.3kV IGBT modules are available on the market since beginning of 1996. In most applications the IGBT


    Original     		500Hz-1000Hz A 3150V HIGH VOLTAGE DIODE 3.3kv 3150v IGBT 3kv Measurement of stray inductance for IGBT FZ1200R33KF1 scsoa IC A 3150V eupec igbt 3.3kv dc motor speed control circuit diagram with IGBT PDF

    SINGLE CHIP INVERTER WITH INTEGRATED IGBT

    Abstract: igbt eupec eupec igbt Eupec Power Semiconductors IGBT power igbt converter for 690 v dc to dc converter igbt igbt driver eupec igbt driver GROUND CONTACT MONITORING CIRCUIT
    Contextual Info: IGBT Stacks Modular PowerSTACK + A Flexible System for Power Solutions §Modular IGBT Stack System §Voltage Range up to 690 V AC §Current Range up to 1800 AAC eupec Marketing November 2001 page1 §Interfaces and Thermal Management Included IGBT Stacks


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    Eupec Power Semiconductors 600v bsm

    Abstract: BSM300GB60DN2 eupec igbt BSM 100 gb Eupec BSM siemens igbt 200 A WELDING INVERTER DESIGN BY IGBT
    Contextual Info: A New Generation of 600V IGBT-Modules Dipl.-Ing. Jürgen Göttert, eupec GmbH & Co KG, Warstein Dipl.-Ing. Andreas Karl, eupec GmbH & Co KG, Warstein Dipl.-Ing. Thomas Laska, SIEMENS, München Dr. Ing. Anton Mauder, SIEMENS, München Dipl.-Ing. Wolfgang Scholz, SIEMENS, München


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    the calculation of the power dissipation for the igbt and the inverse diode in circuits

    Abstract: "the calculation of the power dissipation for the igbt and the inverse diode in circuits" 5kw inverter circuit diagram pure sinus inverter circuit diagram the calculation of the power dissipation for the IGBT BSM25GP120 3 phase inverter 150 degree conduction mode wave IGBT inverter calculation IGBT JUNCTION TEMPERATURE CALCULATION D. Sraiber, W. Lukasch
    Contextual Info: Power Integration with new Econo-PIM IGBT Modules Calculation of junction-temperatures for rectifier-diodes, IGBT’s and freewheeling-diodes in the PIM A. Schulz, N. Dittmann, M. Loddenkötter, Th. Schütze eupec, Max-Planck-Straße 5, 59581 Warstein M. Feldvoß


    Original     		BSM25GP120 the calculation of the power dissipation for the igbt and the inverse diode in circuits "the calculation of the power dissipation for the igbt and the inverse diode in circuits" 5kw inverter circuit diagram pure sinus inverter circuit diagram the calculation of the power dissipation for the IGBT 3 phase inverter 150 degree conduction mode wave IGBT inverter calculation IGBT JUNCTION TEMPERATURE CALCULATION D. Sraiber, W. Lukasch PDF

    delta inverter driver

    Abstract: FZ1200R33KF1 ECONOPACK siemens igbt IGBT parallel siemens IGBT 600a siemens partial discharge
    Contextual Info: IGBT MODULE TECHNOLOGY: STATE OF THE ART AND FUTURE EVOLUTIONS R. Bayerer, eupec GmbH + Co. KG, D-59581 Warstein, Germany Introduction The goal of module technology was always to integrate more and more power semiconductors. It can either mean the integration of IGBT-sixpacks with single chips per leg


    Original     		D-59581 delta inverter driver FZ1200R33KF1 ECONOPACK siemens igbt IGBT parallel siemens IGBT 600a siemens partial discharge PDF

    1287-standard

    Abstract: SiC IGBT High Power Modules eupec igbt 3.3kv failure analysis IGBT PCIM 96 igbt failure fit HIGH VOLTAGE DIODE 3.3kv "DATA MATRIX" EUPEC
    Contextual Info: Further Improvements in the Reliability of IGBT Modules Thomas Schütze, Hermann Berg, Martin Hierholzer eupec GmbH & Co. KG Max-Planck-Straße 5 59581 Warstein, Germany Abstract- This paper gives a survey of the measures and the resulting improvements of IGBT module reliability


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    BUSBAR calculation

    Abstract: BUSBAR calculation datasheet calculation of IGBT snubber 3 level inverter 3 phase motor inverters circuit diagram igbt 3 phase inverters circuit diagram igbt DC Link capacitor calculation design dc link inverter IGBT inverter calculation inductances types
    Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Design Aspects for Inverters with IGBT High Power Modules Dr.-Ing. Th. Schütze, eupec GmbH & Co KG, Warstein, Germany Abstract With regard to the blocking ability and efficiency of the new 3.3 kV IGBT high voltage modules IHV with nominal


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    eupec igbt 10kv

    Abstract: Inverter Delta 6.5kV IGBT igbt 3.3kv eupec igbt 3.3kv EUPEC Thyristor 1200A Thyratron dc to ac inverter eupec igbt 6.5kV thyratron DIAGRAM thyristor inverter
    Contextual Info: The new 6.5kV IGBT module: a reliable device for medium voltage applications Thomas Schuetze, Herman Berg, Oliver Schilling eupec GmbH Max-Planck-Straße 5 59581 Warstein Germany Tel.: +49 2902 764-1153 Fax: +49 2902 764-1150 thomas.schuetze@eupec.com In an effort to combine the advantages of modern high voltage IGBT chip and packaging technology


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    igbt power inverter

    Abstract: eupec igbt series connection igbt Eupec Power Semiconductors IGBT module 3 PHASE pcb for series inverter inverters power inverters pcb diode module V-10-15
    Contextual Info: Novel compact low power IGBT Modules T. Stolze, R. Jörke, R. Schlörke, P.Wallmeier eupec GmbH K. Kanelis Infineon Technologies Abstract The contribution presents a novel IGBT module series designed for low cost / low power voltage source inverters used for industrial and consumer electronics applications from 0.5 to 2.5 kW, e.g.


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    module bsm 20 gp 60

    Abstract: module bsm 25 gp 120 siemens igbt BSM 300 Eupec bsm 25 gb 120 siemens igbt BSM 50 gp 120 siemens igbt BSM 100 gb siemens igbt BSM 75 gb 100 eupec igbt BSM 100 gb Eupec bsm 75 gb 120 IGBT full bridge
    Contextual Info: Power electronics Permanent innovation in IGBT modules Since the mid-80s, the technical specifications of IGBTs have improved substantially, opening up applications long reserved for bipolar components such as thyristors or GTOs. ver since the Siemens Semiconductor Group and eupec GmbH, a power


    Original     		mid-80s, products/36/3622 module bsm 20 gp 60 module bsm 25 gp 120 siemens igbt BSM 300 Eupec bsm 25 gb 120 siemens igbt BSM 50 gp 120 siemens igbt BSM 100 gb siemens igbt BSM 75 gb 100 eupec igbt BSM 100 gb Eupec bsm 75 gb 120 IGBT full bridge PDF

    IGD515EI

    Abstract: IGBT Power Module siemens ag FS450R17KE3 FF400R17KE3 igbt 1200v 150a trench field stop ECONOPACK FF800R17KE3 FF300R17KE3 FZ3600R17KE3 FZ400R17KE3
    Contextual Info: 1700V Trench IGBT Modules * R. Mallwitz, R. Tschirbs , M. Pfaffenlehner, A. Mauder (*) (*) (*) (*) , C. Schaeffer (*) eupec GmbH, Max-Planck Straße 5, D-59581 Warstein-Belecke Infineon Technologies AG, Balanstraße 73, D-81541 Munich Infineon Technologies AG, Siemensstraße 2, A-9500 Villach


    Original     		D-59581 D-81541 IGD515EI IGBT Power Module siemens ag FS450R17KE3 FF400R17KE3 igbt 1200v 150a trench field stop ECONOPACK FF800R17KE3 FF300R17KE3 FZ3600R17KE3 FZ400R17KE3 PDF

    Eupec BSM

    Abstract: BSM50GD120DN2E3226 E3226 GD120DN2E3226 C67070-A2514-A67
    Contextual Info: eupec BSM 50 GD120DN2E3226 IGBT Power Module • Power module • 3-phase fuN-bridge • Including fast free-wheel diodes • Package with insulated metal base plate • E3226: long terminals, limited current per terminal Type BSM 50 GD120DN2E3226 ^CE h 1200V 50A


    OCR Scan     		GD120DN2E3226 E3226: C67070-A2514-A67 GD120PN2E3226 Eupec BSM BSM50GD120DN2E3226 E3226 PDF

    Rogowski Coil design

    Abstract: Rogowski Coil Measurement of stray inductance for IGBT IGBT Pspice IGBT 5kV pspice high frequency igbt pwm igbt rogowski coil measurement IGBT with V-I characteristics Rogowski
    Contextual Info: Research of Current Distribution in IGBT Modules with Multiple Chips in Parallel M.Bäßler1, M.Münzer1, S.Burkert2 1 eupec GmbH, Max Planck Str.5, D-59581Warstein Germany, Tel: +49-2902-764-2290, Fax: +492902-764-1150, email: marco.baessler@eupec.com 2) Otto-von-Guericke-Universität, Universitätsplatz2 Magdeburg Germany


    Original     		D-59581Warstein 2003-Toulouse Rogowski Coil design Rogowski Coil Measurement of stray inductance for IGBT IGBT Pspice IGBT 5kV pspice high frequency igbt pwm igbt rogowski coil measurement IGBT with V-I characteristics Rogowski PDF

    IGBT EUPEC

    Contextual Info: IGBT/MOSFET Applications based on Coreless Transformer Driver IC 2ED020I12-F A. Volke1, M. Hornkamp 1, B. Strzalkowski2 1 eupec GmbH, Max-Planck-Str. 5, D-59581 Warstein, Germany, info@eupec.com, Tel.: +49- 0 2902-764-0 2 Infineon Technologies AG, Balanstr. 59, D-81609 Munich, Germany


    Original     		2ED020I12-F D-59581 D-81609 2ED020I12-F LMC555, IGBT EUPEC PDF

    BUSBAR calculation

    Abstract: 3rd Generation of 1200V IGBT Modules BUSBAR calculation datasheet abstract for universal MOTOR SPEED CONTROL USING IGBT FF600R17IE3 FF500R17IE3 lhs20 SCHEMATIC servo dc IGBTS IGBT inverter calculation schematic diagram power supply inverter type 1500
    Contextual Info: Properties of a New PrimePACK IGBT Module Concept for Optimized Electrical and Thermal Interconnection to a Modern Converter Environment O. Schilling, M. Wölz, G. Borghoff, Th. Nübel, G. Bräker, Chr. Lübke, eupec GmbH , Warstein Abstract: II PrimePACK™ module line-up


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    heatsink catalogue

    Abstract: FS450R12KE3 3rd Generation of 1200V IGBT Modules FS300R12KE3 Econo PIM The internal structure module IGBT FS300R12KE3 FS150R12KE3G half bridge converter 2kw High Voltage Busbar inverter techniques
    Contextual Info: EconoPACK+ A new IGBT module for optimized inverter solutions M. Münzer, M.Hornkamp eupec GmbH & Co.KG, Warstein 08.2000 So called EconoPACK and EconoPIM modules with solderable pin terminals have changed the structure of inverters in application up to 20kW. Above 100 kW IHM modules have set a new


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    IGBT motor DRIVER SCHEMATIC hcpl

    Abstract: siemens sinamics igbt chip siemens igbt inverters 5kw inverter schematic IGBT Power Module siemens ag advantage and disadvantage of igbt IGBT DRIVER SCHEMATIC 3 PHASE SCHEMATIC 5kw power supply 30A FS75R12KE3_B3 SINAMICS S120
    Contextual Info: Current Shunt Resistors integrated in IGBT Power Modules for Medium Power Drive Application M. Hornkamp1, R.Tschirbs1 1 eupec GmbH, Max-Planck-Straße 5, D-59581 Warstein, Michael.Hornkamp@eupec.com , Tel.: +49- 0 2902-764-1159 Current sensors are required to measure an electric current in an output phase of an


    Original     		D-59581 FS75R12KE3 FS100R12KE3 FS150R12KE3 5966-0001E IGBT motor DRIVER SCHEMATIC hcpl siemens sinamics igbt chip siemens igbt inverters 5kw inverter schematic IGBT Power Module siemens ag advantage and disadvantage of igbt IGBT DRIVER SCHEMATIC 3 PHASE SCHEMATIC 5kw power supply 30A FS75R12KE3_B3 SINAMICS S120 PDF

    igbt infineon

    Abstract: Easy-750 The field stop IGBT FS IGBT infineon igbt reliability IGBT inverter design by microcontroller A-9500 infineon igbt die 1200V igbt3 igbt2 infineon infineon igbt3 rg easypim igbt
    Contextual Info: 600 V IGBT³-Technology in New Low Cost Modules for Consumer Drives Applications P. Kanschat1, T. Stolze1, T. Passe1, H. Rüthing2, F. Umbach2, O. Hellmund3 1 eupec GmbH, Max-Planck-Str. 5, D-59581 Warstein, Germany Infineon Technologies AG, St. Martin-Str. 76, D-81541 München, Germany


    Original     		D-59581 D-81541 Easy750 6ED004E06" igbt infineon Easy-750 The field stop IGBT FS IGBT infineon igbt reliability IGBT inverter design by microcontroller A-9500 infineon igbt die 1200V igbt3 igbt2 infineon infineon igbt3 rg easypim igbt PDF

    FS75R12KE3

    Abstract: AN2003-03 FS75R12KT3 4kA IGBT igbt3 rg eupec module igbt
    Contextual Info: Application Note Seite 1 Datum: 2005-04-27 AN Nummer: AN2005-02 Characteristic differences between 1200V IGBT3 modules of the E3 and T3 series 1. Chip Technology IGBT 1200V The product range of the existing 1200V IGBT modules of the third generation IGBT3 – E3 was expanded by a further optimization.


    Original     		AN2005-02 AN2003-03) higher5R12KE3 D-59581 FS75R12KE3 AN2003-03 FS75R12KT3 4kA IGBT igbt3 rg eupec module igbt PDF